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A silicon-graphene-silicon transistor with an improved current gain 认领 引用
1
作者 Chi Liu Xu-Qi Yang +4 位作者 Wei Ma Xin-Zhe Wang Hai-Yan Jiang Wen-Cai Ren Dong-Ming Sun 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第9期127-130,共4页
In history,semiconductor-metal-semiconductor transistor(SMST)was proposed for frequency improvement.However,a general fabrication method is still missing due to the unsolved technological problem of deposition of a ge... In history,semiconductor-metal-semiconductor transistor(SMST)was proposed for frequency improvement.However,a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal,and a thinner metal base is also difficult to be fabricated with high quality.Recently,due to the atomic thickness of graphene,the concept of semiconductor-graphene-semiconductor transistor(SGST)has emerged which leads to the renaissance of SMST,however the experimental study is in its infancy.In this letter,SMST and SGST are fabricated using Si membrane transfer.It is found the common base current gain can be improved from about 0.5%in a Si-Au-Si transistor to about 1%in a Si-Gr-Ge one,and to above 10%in a Si-Gr-Si one,which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene. 展开更多
关键词 Semiconductor metal semiconductor transistor Graphene base transistor Graphene base heterojunction transistor
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A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability 认领 引用 被引量：1
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作者 Tariq Aziz Yun Sun +7 位作者 Zu-Heng Wu Mustafa Haider Ting-Yu Qu Azim Khan Chao Zhen Qi Liu Hui-Ming Cheng Dong-Ming Sun 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2021年第27期151-157,共7页
Metal phthalocyanine is considered one of the most promising candidates for the design and fabrication of flexible resistive random access memory(RRAM)devices due to its intrinsic flexibility and excellent functionali... Metal phthalocyanine is considered one of the most promising candidates for the design and fabrication of flexible resistive random access memory(RRAM)devices due to its intrinsic flexibility and excellent functionality.However,performance degradation and the lack of multi-level capability,which can directly expand the storage capacity in one memory cell without sacrificing additional layout area,are the primary obstacles to the use of metal phthalocyanine RRAMs in information storage.Here,a flexible RRAM with pristine nickel phthalocyanine(Ni Pc)as the resistive layer is reported for multi-level data storage.Due to its high trap-concentration,the charge transport behavior of the device agrees well with classical space charge limited conduction controlled by traps,leading to an excellent performance,including a high on-off current ratio of 107,a long-term retention of 106s,a reproducible endurance over6000 cycles,long-term flexibility at a bending strain of 0.6%,a write speed of 50 ns under sequential bias pulses and the capability of multi-level data storage with reliable retention and uniformity. 展开更多
关键词 Flexible Metal phthalocyanine Resistive random access memory Multi-level
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Bioinspired phototransistor with tunable sensitivity for low-contrast target detection 认领 引用
3
作者 Ruyue Han Dayu Jia +7 位作者 Bo Li Shun Feng Guoteng Zhang Yun Sun Zheng Han Chi Liu Hui-Ming Cheng Dong-Ming Sun 《Light: Science & Applications》 SCIE EI CAS CSCD 2026年第1期130-139,共10页
Accurate recognition of low-contrast targets in complex visual environments is essential for advanced intelligent machine vision systems.Conventional photodetectors often suffer from a weak photoresponse and a linear ... Accurate recognition of low-contrast targets in complex visual environments is essential for advanced intelligent machine vision systems.Conventional photodetectors often suffer from a weak photoresponse and a linear dependence of photocurrent on light intensity,which restricts their ability to capture low-contrast features and makes them susceptible to noise.Inspired by the adaptive mechanisms of the human visual system,we present a molybdenum disulfide(MoS2)phototransistor with tunable sensitivity,in which the gate stack incorporates a heterostructure diode—composed of O-plasma-treated MoS2 and pristine MoS2—that serves as the photosensitive layer.This configuration enables light-intensity-dependent modulation of the diode’s conductance,which dynamically in turn alters the voltage distribution across the gate dielectric and transistor channel,leading to a significant photoresponse.By modulating the gate voltage,the light response range can be finely tuned,maintaining high sensitivity to low-contrast targets while suppressing noise interference.Compared to conventional photodetectors,the proposed device achieves a 1000-fold improvement in sensitivity for low-contrast signal detection and exhibits significantly enhanced noise immunity.The intelligent machine vision system built on this device demonstrates exceptional performance in detecting low-contrast targets,underscoring its promise for next-generation machine vision applications. 展开更多
关键词 tunable sensitivity adaptive mechanisms noise immunity advanced intelligent machine vision systemsconventional photodetectors bioinspired phototransistor machine vision human visual systemwe low contrast target detection
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2D gate-all-around logic devices: a path toward monolithic 3D circuits beyond silicon 认领 引用
4
作者 Shun Feng Dong-Ming Sun Hui-Ming Cheng 《Science China Materials》 SCIE EI CAS CSCD 2025年第10期3838-3840,共3页
Since Moore's Law was proposed in the 1970s, the size of silicon(Si) transistors has continuously shrunk, significantly increasing the integration density and computational power of integrated circuits [1].
关键词 d gate all logic devices integrated circuits monolithic d circuits silicon transistors integration density moores law computational power
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