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Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment 认领 引用 被引量：4
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作者 Depeng Li Jingrui Ma +8 位作者 Wenbo Liu Guohong Xiang Xiangwei Qu Siqi Jia Mi Gu Jiahao Wei Pai Liu Kai Wang Xiaowei Sun 《Journal of Semiconductors》 EI CAS CSCD 2023年第9期68-74,共7页
The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coa... The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coating of the HTL.The lack of compatibility between the HTL’s solvent and the QD layer results in an uneven surface,which negatively impacts the overall device performance.In this work,we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent.The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V,a high maximum luminance of 105500 cd/m2,and a remarkable maximum external quantum efficiency of 13.34%.This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs. 展开更多
关键词 quantum dots quantum-dot light-emitting diodes inverted structure ligand treatment
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Improved blue quantum dot light-emitting diodes via chlorine passivated ZnO nanoparticle layer 认领 引用 被引量：3
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作者 Xiangwei Qu Jingrui Ma +4 位作者 Siqi Jia Zhenghui Wu Pai Liu Kai Wang Xiao-Wei Sun 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第11期141-145,共5页
In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport laye... In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability. 展开更多
关键词 quantum dot light emitting diodes(QLEDs) chlorine passivation electron injection
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A dC/dV Measurement for Quantum-Dot Light-Emitting Diodes 认领 引用 被引量：2
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作者 Jingrui Ma Haodong Tang +5 位作者 Xiangwei Qu Guohong Xiang Siqi Jia Pai Liu Kai Wang Xiao Wei Sun 《Chinese Physics Letters》 SCIE EI CAS CSCD 2022年第12期94-98,共5页
We present dC/dV analysis based on the capacitance-voltage(C–V)measurement of quantum-dot lightemitting diodes(QLEDs),and find that some key device operating parameters(electrical and optical turn-on voltage,peak cap... We present dC/dV analysis based on the capacitance-voltage(C–V)measurement of quantum-dot lightemitting diodes(QLEDs),and find that some key device operating parameters(electrical and optical turn-on voltage,peak capacitance,maximum efficiency)can be directly related to the turning points and maximum/minimum of the dC/dV(versus voltage)curve.By the dC/dV study,the behaviors such as low turn-on voltage,simultaneous electrical and optical turn-on process,and carrier accumulation during the device aging can be well explained.Moreover,we perform the C–V and dC/dV measurement of aged devices,and confirm that our dC/dV analysis is correct for them.Thus,our dC/dV analysis method can be applied universally for QLED devices.It provides an in-depth understanding of carrier dynamics in QLEDs through simple C–V measurement. 展开更多
关键词 measurement capacitance Quantum
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Impedance spectroscopy for quantum dot light-emitting diodes 认领 引用 被引量：4
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作者 Xiangwei Qu Xiaowei Sun 《Journal of Semiconductors》 EI CAS CSCD 2023年第9期26-38,共13页
Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance s... Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs.In particular,we focus on the Nyquist plot,Mott-Schottky analysis,capacitance-frequency and capacitance-voltage characteristics,and the d C/d V measurement of the QLEDs.These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models,characteristic time constants,charge injection and recombination points,and trap distribution of the QLEDs.However,this paper will also discuss the disadvantages and limitations of these measurements.Fundamentally,this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy,offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs. 展开更多
关键词 quantum dot light-emitting diode impedance spectroscopy equivalent circuit model charge dynamics
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On the voltage behavior of quantum dot light-emitting diode 认领 引用 被引量：3
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作者 Xiangwei Qu Jingrui Ma +2 位作者 Pai Liu Kai Wang Xiao Wei Sun 《Nano Research》 SCIE EI CSCD 2023年第4期5511-5516,共6页
The origin of the efficiency drop of quantum dot light-emitting diode(QLED)under consecutive voltage sweeps is still a puzzle.In this work,we report the voltage sweep behavior of QLED.We observed the efficiency drop o... The origin of the efficiency drop of quantum dot light-emitting diode(QLED)under consecutive voltage sweeps is still a puzzle.In this work,we report the voltage sweep behavior of QLED.We observed the efficiency drop of red QLED with ZnMgO electron transport layer(ETL)under consecutive voltage sweeps.In contrast,the efficiency increases for ZnO ETL device.By analyzing the electrical characteristics of both devices and surface traps of ZnMgO and ZnO nanoparticles,we found the efficiency drop of ZnMgO device is related to the hole leakage mediated by trap state on ZnMgO nanoparticles.For ZnO device,the efficiency raise is due to suppressed electron leakage.The hole leakage also causes rapid lifetime degradation of ZnMgO device.However,the efficiency and lifetime degradation of ZnMgO device can be eliminated with shelf aging.Our work reveals the distinct voltage sweep behavior of QLED based on different ETLs and may help to understand the lifetime degradation mechanism in QLED. 展开更多
关键词 quantum dot light-emitting diode voltage sweep behavior efficiency drop hole leakage current
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Erratum to: On the voltage behavior of quantum dot light-emitting diode 认领 引用
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作者 Xiangwei Qu Jingrui Ma +2 位作者 Pai Liu Kai Wang Xiao Wei Sun 《Nano Research》 SCIE EI CSCD 2024年第4期3424-3424,共1页
Erratum to Nano Research,2023,16(4):5511–5516 http://gffzzd3cc09b8251d45dfsnf5kcpknvqvv655p.ffgz.tsg.suse.edu.cn/10.1007/s12274-022-5106-8 The title in the article was unfortunately mispresented on page 5511.The title of the article should be corrected to“On the vol... Erratum to Nano Research,2023,16(4):5511–5516 http://gffzzd3cc09b8251d45dfsnf5kcpknvqvv655p.ffgz.tsg.suse.edu.cn/10.1007/s12274-022-5106-8 The title in the article was unfortunately mispresented on page 5511.The title of the article should be corrected to“On the voltage sweep behavior of quantum dot light-emitting diode”.Instead of On the voltage behavior of quantum dot light-emitting diode It should read On the voltage sweep behavior of quantum dot light-emitting diode. 展开更多
关键词 diode emitting voltage
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Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers 认领 引用 被引量：3
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作者 Nan Zhang Xiangwei Qu +2 位作者 Quan Lyu Kai Wang Xiao Wei Sun 《Photonics Research》 SCIE EI CAS CSCD 2021年第10期1979-1983,共5页
Herein,we report the fabrication of high-performance transparent quantum-dot light-emitting diodes(Tr-QLEDs)with ZnO/ZnMgO inorganic double electron-transport layers(ETLs).The ETLs effectively suppress the excess elec... Herein,we report the fabrication of high-performance transparent quantum-dot light-emitting diodes(Tr-QLEDs)with ZnO/ZnMgO inorganic double electron-transport layers(ETLs).The ETLs effectively suppress the excess electron injection and facilitate charge balance in the Tr-QLEDs.The thick ETLs as buffer layers can also withstand the plasma-induced damage during the indium tin oxide sputtering.These factors collectively contribute to the development of Tr-QLEDs with improved performance.As a result,our Tr-QLEDs with double ETLs exhibited a high transmittance of 82%at 550 nm and a record external quantum efficiency of 11.8%,which is 1.27 times higher than that of the devices with pure ZnO ETL.These results indicate that the developed ZnO/ZnMgO inorganic double ETLs could offer promising solutions for realizing high-efficiency Tr-QLEDs for next-generation display devices. 展开更多
关键词 diodes double quantum
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