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Zigzag domain walls unravel the polarization switching puzzle in wurtzite ferroelectrics 认领 引用
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作者 Hang Zang Zhiming Shi +1 位作者 Xiaojuan Sun Dabing Li 《Journal of Semiconductors》 EI CAS CSCD 2026年第6期33-36,共4页
In the past decade,the discovery of robust ferroelectricity in scandium-doped aluminum nitride(Al1−xScxN)[1]has ignited a new wave of research in the semiconductor community.Unlike traditional perovskite ferroel... In the past decade,the discovery of robust ferroelectricity in scandium-doped aluminum nitride(Al1−xScxN)[1]has ignited a new wave of research in the semiconductor community.Unlike traditional perovskite ferroelectrics(such as PbZrTiO3 or PZT)[2],wurtzite-structured materials are fully compatible with modern CMOS fabrication processes[3]. 展开更多
关键词 cmos fabrication processes zigzag domain walls scandium doped aluminum nitride wurtzite ferroelectrics semiconductor community robust ferroelectricity perovskite ferroelectrics such polarization switching
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Compressive stress management for hillock-free AlGaN epitaxy on HTA-AlN templates using low-Al-content interlayer 认领 引用 被引量：1
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作者 Entao Zhang Jianwei Ben +5 位作者 Zikai Nie Shanli Zhang Yang Chen Ke Jiang Xiaojuan Sun Dabing Li 《Journal of Semiconductors》 EI CAS CSCD 2026年第2期88-95,共8页
High-temperature-annealed Al N(HTA-Al N) templates provide ideal substrates for high-quality Al Ga N epitaxy. However, the significant compressive stress accumulated within the Al Ga N layer makes it challenging to ac... High-temperature-annealed Al N(HTA-Al N) templates provide ideal substrates for high-quality Al Ga N epitaxy. However, the significant compressive stress accumulated within the Al Ga N layer makes it challenging to achieve a smooth surface free of hexagonal hillocks on these templates. To address this issue, we investigate the mechanism of compressive stress accumulation during the growth of Al Ga N-based epilayers on HTA-Al N templates using in-situ curvature analysis in this study. To verify the mechanism, a low-Al-content Al Ga N interlayer is introduced between the Al N epilayer and the subsequent Al Ga N epilayer. The larger a-plane lattice constant of this interlayer relative to the Al Ga N epilayer slows the accumulation rate of compressive stress. The hexagonal hillock can be effectively suppressed and the surface of Al Ga N epilayer can be significantly regulated by adopting various low-Al-content Al Ga N interlayers. This work provides a comprehension on the stress accumulation mechanism in Al Ga N epilayers and a feasible method to obtain hillock-free surface of Al Ga N epilayers on HTA-Al N templates,which will be beneficial for fabricating Al Ga N based devices. 展开更多
关键词 surface hillock AlGaN high temperature anneal AlN template
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6-inch AlN epitaxial films with low dislocation densities via MOCVD 认领 引用
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作者 Shunpeng Lu Jianwei Ben +8 位作者 Ke Jiang Shanli Zhang Ruojia Zhang Jialong Hao Zhongxu Liu Wenchao Sun Zikai Nie Xiaojuan Sun Dabing Li 《Journal of Semiconductors》 EI CAS CSCD 2025年第2期151-157,共7页
High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN fi... High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN films on 17 nm AlN/sapphire tem-plates using metal-organic chemical vapor deposition(MOCVD).Comprehensive characterization reveals significant advance-ments in crystal quality and uniformity.Atomic force microscopy(AFM)shows progressive surface roughness reduction during early growth stages,achieving stabilization at a root mean square(RMS)roughness of 0.216 nm within 3 min,confirming suc-cessful 2D growth mode.X-ray rocking curve(XRC)analysis indicates a marked reduction in the(0002)reflection full width at half maximum(FWHM),from 445 to 96 arcsec,evidencing effective dislocation annihilation.Transmission electron microscopy(TEM)demonstrates the elimination of edge dislocations near the AlN template interface.Stress analysis highlights the role of a highly compressive 17 nm AlN template(5.11 GPa)in facilitating threading dislocation bending and annihilation,yielding a final dislocation density of~1.5×107 cm-2.Raman spectroscopy and XRC mapping confirm excellent uniformity of stress and crystal quality across the wafer.These findings demonstrate the feasibility of this method for producing high-quality,large-area,atomically flat AlN films,advancing applications in optoelectronics and power electronics. 展开更多
关键词 AlN 6-inch MOCVD threading dislocation density optoelectronic power electronics
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Periodic Janus structure based on ionic covalent organic framework for selective removal of perfluoroalkyl substances 认领 引用
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作者 Xiaojuan Sun Ke Kong +3 位作者 Jun Liang Dan Wang Beibei Dong Ruihu Wang 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2025年第9期14-19,共6页
Per-and polyfluoroalkyl substances(PFAS)are persistent environmental contaminants that often show an adverse impact on human health.Rational design of porous adsorbents for selective and reversible removal of PFAS,suc... Per-and polyfluoroalkyl substances(PFAS)are persistent environmental contaminants that often show an adverse impact on human health.Rational design of porous adsorbents for selective and reversible removal of PFAS,such as perfluorooctane sulfonate(PFOS),is imperative and challenging.Herein,a Janus strategy based on an ionic covalent organic framework(iCOF-DGCl)composed of the alternately hydrophobic aromatic domains and hydrophilic guanidinium moieites has been proposed to meet the requirement of high-performance adsorbents.iCOF-DGCl shows fast adsorption kinetics(970.9 mg g−1min−1)and ultrahigh uptake capacity(2491 mg g−1)toward PFOS,making it one of the most effective materials among the reported PFOS adsorbents.Moreover,the PFOS removal by iCOF-DGCl remains highly selective in the presence of disturbing anions,and the adsorbent could be well recovered for reuse.Mechanism studies have demonstrated that the Janus structure units of iCOF-DGCl form both hydrophobic and electrostatic interactions with the amphiphilic PFOS,thus achieving cooperative adsorption of PFOS.This work provides a facile approach based on Janus structure of COFs adsorbent for wastewater remediation. 展开更多
关键词 Covalent organic framework Ionic polymer Perfluorooctane sulfonate Adsorption Adsorbent
Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80%for far-UVC LEDs 认领 引用 被引量：1
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作者 Jiale Peng Ke Jiang +8 位作者 Shanli Zhang Jianwei Ben Kexi Liu Ziyue Qin Ruihua Chen Chunyue Zhang Shunpeng Lv Xiaojuan Sun Dabing Li 《Journal of Semiconductors》 EI CAS CSCD 2025年第9期42-49,共8页
AlGaN-based LEDs with peak wavelength below 240 nm(far-UVC)pose no significant harm to human health,thus highlighting their broader application potential.While,there is a significant Schottky barrier between the n-ele... AlGaN-based LEDs with peak wavelength below 240 nm(far-UVC)pose no significant harm to human health,thus highlighting their broader application potential.While,there is a significant Schottky barrier between the n-electrode and Alrich n-AlGaN,adversely impeding electron injection and resulting in considerable heat generation.Here,we fabricate V-based electrodes of V/Al/Ti/Au on n-AlGaN with Al content over 80%and investigate the relationship between the metal diffusion and contact properties during the high-temperature annealing process.Experiments reveal that decreasing V thickness in the electrode promotes the diffusion of Al towards the surface of n-AlGaN,which facilitates the formation of VN and thus the increase of local electron concentration,resulting in lower specific contact resistivity.Then,increasing the Al thickness inhibits the diffusion of Au to the n-AlGaN surface,suppressing the rise of Schottky barrier.Experimentally,an optimized n-electrode of V(10 nm)/Al(240 nm)/Ti(40 nm)/Au(50 nm)on n-Al0.81Ga0.19N is obtained,realizing an optimal specific contact resistivity of 7.30×10−4Ω·cm2.Based on the optimal n-electrode preparation scheme for Al-rich n-AlGaN,the work voltage of a far-UVC LED with peak wavelength of 233.5 nm is effectively reduced. 展开更多
关键词 Al-rich n-AlGaN specific contact resistivity far-UVC LED
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AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties 认领 引用
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作者 Zhizhong Wang Jingting He +9 位作者 Fuping Huang Xuchen Gao Kangkai Tian Chunshuang Chu Yonghui Zhang Shuting Cai Xiaojuan Sun Dabing Li Xiao Wei Sun Zi-Hui Zhang 《Journal of Semiconductors》 EI CAS CSCD 2025年第9期51-61,共11页
In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n+-GaN cap layer.With the developed physical models,we find that the n+-GaN cap layer prov... In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n+-GaN cap layer.With the developed physical models,we find that the n+-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm2.We also adopt the trenched n+-GaN structure such that partial of the n+-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si3N4layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10−5A·cm−2and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm−2.Our investigations also find that the pre-deposited Si3N4layer helps suppress the electron capture and transport processes,which enables the reduced dynamic Ron,sp. 展开更多
关键词 AlGaN/GaN-based Schottky barrier diodes(SBDs) n+-GaN cap layer Si3N4protective layer
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240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect 认领 引用 被引量：5
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作者 Shunpeng Lu Jiangxiao Bai +6 位作者 Hongbo Li Ke Jiang Jianwei Ben Shanli Zhang Zi-Hui Zhang Xiaojuan Sun Dabing Li 《Journal of Semiconductors》 EI CAS CSCD 2024年第1期55-62,共8页
240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge ef... 240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs. 展开更多
关键词 AlGaN deep ultraviolet micro-LEDs light extraction efficiency size effect edge effect
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Rapid inactivation of human respiratory RNA viruses by deep ultraviolet irradiation from light-emitting diodes on a high-temperatureannealed AlN/Sapphire template 认领 引用 被引量：3
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作者 Ke Jiang Simeng Liang +8 位作者 Xiaojuan Sun Jianwei Ben Liang Qu Shanli Zhang Yang Chen Yucheng Zheng Ke Lan Dabing Li Ke Xu 《Opto-Electronic Advances》 SCIE EI CAS CSCD 2023年第9期31-43,共13页
Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage.The AlGaN-based deep ultraviolet(DUV)light-emission diode(LED)has high practi... Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage.The AlGaN-based deep ultraviolet(DUV)light-emission diode(LED)has high practical potentials because of its advantages of variable wavelength,rapid sterilization,environmental protection,and miniaturization.Therefore,whether the emission wavelength has effects on the disinfection as well as whether the device is feasible to sterilize various respiratory RNA viruses under portable conditions is crucial.Here,we fabricate AlGaN-based DUV LEDs with different wavelength on high-temperature-annealed(HTA)AlN/Sapphire templates and investigate the inactivation effects for several respiratory RNA viruses.The AlN/AlGaN superlattices are employed between the template and upper n-AlGaN to release the strong compressive stress(SCS),improving the crystal quality and interface roughness.DUV LEDs with the wavelength of 256,265,and 278 nm,corresponding to the light output power of 6.8,9.6,and 12.5 mW,are realized,among which the 256 nm-LED shows the most potent inactivation effect in human respiratory RNA viruses,including SARS-CoV-2,influenza A virus(IAV),and human parainfluenza virus(HPIV),at a similar light power density(LPD)of~0.8 mW/cm2 for 10 s.These results will contribute to the advanced DUV LED application of disinfecting viruses with high potency and broad spectrum in a portable and eco-friendly use. 展开更多
关键词 AlGaN DUV LED superlattice SARS-CoV-2 influenza A virus
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Introducing voids around the interlayer of AlN by high temperature annealing 认领 引用 被引量：2
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作者 Jianwei Ben Jiangliu Luo +3 位作者 Zhichen Lin Xiaojuan Sun Xinke Liu Xiaohua Li 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第7期448-453,共6页
Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging.In this work,the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic che... Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging.In this work,the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition.Then,the AlN template was annealed at 1700℃for an hour to introduce the voids.It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer.Meanwhile,the dislocation density of the AlN template decreased from 5.26×109cm-2to 5.10×108cm-2.This work provides a possible method to introduce voids into AlN layer at a designated height,which will benefit the design of AlN-based devices. 展开更多
关键词 AlN template AlN interlayer voids high-temperature annealing
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Neural differentiation of human placenta-derived mesenchymal stem cells following neural cell co-culture 认领 引用 被引量：2
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作者 Nailong Yang Hongyan Zhang +1 位作者 Xiaojuan Sun Lili Xu 《Neural Regeneration Research》 SCIE CAS CSCD 2011年第1期23-28,共6页
We induced human placenta-derived mesenchymal stem cells(hPMSCs)to differentiate into neural cells by adding chemical reagents,despite the fact that toxic chemicals induce cell shrinkage or cytoskeletal formation,whic... We induced human placenta-derived mesenchymal stem cells(hPMSCs)to differentiate into neural cells by adding chemical reagents,despite the fact that toxic chemicals induce cell shrinkage or cytoskeletal formation,which does not represent a proper cell differentiation process.The present study established a co-culture system with hPMSCs and neural cells and analyzed the influence of neural cells on hPMSC differentiation in a co-culture system,hPMSCs were isolated and purified from human full-term placenta using collagenase digestion.Fetal neural cells were co-cultured with hPMSCs for 48 hours using the Transwell co-culture system,hPMSCs co-cultured with neural cells exhibited a slender morphology with a filament.After 96 hours,hPMSCs expressed neuron-specific enolase,which suggested that co-culture of hPMSCs and neural cells induced neural differentiation of hPMSCs. 展开更多
关键词 human placenta-derived mesenchymal stem cells Transwell co-culture differentiation neural cells
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Optimized sampling protocol for mass spectrometry-based metabolomics in Streptomyces 认领 引用
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作者 Xiaoyun Liu Tong Wang +4 位作者 Xiaojuan Sun Zejian Wang Xiwei Tian Yingping Zhuang Ju Chu 《Bioresources and Bioprocessing》 SCIE EI 2019年第1期257-268,共12页
In quantitative metabolomics studies,the most crucial step was arresting snapshots of all interesting metabolites.However,the procedure customized for Streptomyces was so rare that most studies consulted the procedure... In quantitative metabolomics studies,the most crucial step was arresting snapshots of all interesting metabolites.However,the procedure customized for Streptomyces was so rare that most studies consulted the procedure from other bacteria even yeast,leading to inaccurate and unreliable metabolomics analysis.In this study,a base solution(acetone:ethanol=1:1,mol/mol)was added to a quenching solution to keep the integrity of the cell membrane.Based on the molar transition energy(E T)of the organic solvents,five solutions were used to carry out the quenching procedures.These were acetone,isoamylol,propanol,methanol,and 60%(v/v)methanol.To the best of our knowledge,this is the first report which has utilized a quenching solution with ET values.Three procedures were also adopted for extraction.These were boiling,freezing-thawing,and grinding ethanol.Following the analysis of the mass balance,amino acids,organic acids,phosphate sugars,and sugar alcohols were measured using gas chromatography with an isotope dilution mass spectrometry.It was found that using isoamylol with a base solution(5:1,v/v)as a quenching solution and that freezing-thawing in liquid nitrogen within 50%(v/v)methanol as an extracting procedure were the best pairing for the quantitative metabolomics of Streptomyces ZYJ-6,and resulted in average recoveries of close to 100%.The concentration of intracellular metabolites obtained from this new quenching solution was between two and ten times higher than that from 60%(v/v)methanol,which until now has been the most commonly used solution.Our findings are the first systematic quantitative metabolomics tools for Streptomyces ZYJ-6 and,therefore,will be important references for research in fields such as 13C based metabolic flux analysis,multi-omic research and genome-scale metabolic model establishment,as well as for other Streptomyces. 展开更多
关键词 Quantitative metabolomics Streptomyces Quenching Leakage Extraction
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Characteristics and Mechanisms of Persistent Wet–Cold Events with Different Cold-air Paths in South China 认领 引用 被引量：4
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作者 Xiaojuan SUN Li CHEN +1 位作者 Chuhan LU Panxing WANG 《Advances in Atmospheric Sciences》 SCIE CAS CSCD 2024年第6期1171-1183,共13页
We investigate the characteristics and mechanisms of persistent wet–cold events(PWCEs)with different types of coldair paths.Results show that the cumulative single-station frequency of the PWCEs in the western part o... We investigate the characteristics and mechanisms of persistent wet–cold events(PWCEs)with different types of coldair paths.Results show that the cumulative single-station frequency of the PWCEs in the western part of South China is higher than that in the eastern part.The pattern of single-station frequency of the PWCEs are“Yangtze River(YR)uniform”and“east–west inverse”.The YR uniform pattern is the dominant mode,so we focus on this pattern.The cold-air paths for PWCEs of the YR uniform pattern are divided into three types—namely,the west,northwest and north types—among which the west type accounts for the largest proportion.The differences in atmospheric circulation of the PWCEs under the three types of paths are obvious.The thermal inversion layer in the lower troposphere is favorable for precipitation during the PWCEs.The positive water vapor budget for the three types of PWCEs mainly appears at the southern boundary. 展开更多
关键词 persistent wet–cold events cold-air paths circulation characteristics water vapor
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A New Method of Significance Testing for Correlation-Coefficient Fields and Its Application 认领 引用
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作者 Xiaojuan SUN Siyan LI +2 位作者 Julian XL WANG Panxing WANG Dong GUO 《Advances in Atmospheric Sciences》 SCIE CAS CSCD 2022年第3期529-535,共7页
Correlation-coefficient fields are widely used in short-term climate prediction research. The most frequently used significance test method for the correlation-coefficient field was proposed by Livezey, in which the n... Correlation-coefficient fields are widely used in short-term climate prediction research. The most frequently used significance test method for the correlation-coefficient field was proposed by Livezey, in which the number of significantcorrelation lattice(station) points on the correlation coherence map is used as the statistic. However, the method is based on two assumptions:(1) the spatial distribution of the lattice(station) points is uniform;and(2) there is no correlation between the physical quantities in the correlation-coefficient field. However, in reality, the above two assumptions are not valid.Therefore, we designed a more reasonable method for significance testing of the correlation-coefficient field. Specifically, a new statistic, the significant-correlation area, is introduced to eliminate the inhomogeneity of the grid(station)-point distribution, and an empirical Monte Carlo method is employed to eliminate the spatial correlation of the matrix.Subsequently, the new significance test was used for simultaneous correlation-coefficient fields between intensities of the atmospheric activity center in the Northern Hemisphere and temperature/precipitation in China. The results show that the new method is more reasonable than the Livezey method. 展开更多
关键词 correlation-coefficient field significant-correlation area empirical Monte Carlo method significance test
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Spatio-Temporal Characteristics of Winter Cold Events in China from 1960 to 2020 认领 引用
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作者 Haifeng Chen Xiaojuan Sun +2 位作者 Shu Zhou Junjun Wang Lin Zhou 《Journal of Geoscience and Environment Protection》 2022年第5期94-110,共17页
Under the background of global warming, extreme cold events occur frequently. It is important to enhance the understanding of cold air patterns for forecasting cold air and reducing cold air-induced meteorological dis... Under the background of global warming, extreme cold events occur frequently. It is important to enhance the understanding of cold air patterns for forecasting cold air and reducing cold air-induced meteorological disasters. The study used the daily minimum temperatures from the National Climate Centre to classify the cold events affecting China into five different grades and the characteristics of different intensity cold events in China during the winter from 1960 to 2020 were analyzed. The results showed that there is little difference in the distribution of the frequency of general cold events from north to south, with duration longer in the north than in the south and an increase in frequency in the north in the last 60 years. The frequency of strong cold events is more in the north of China than in the south of China, and the duration is longer in the south than in the north China, with the frequency decreasing in most parts of the country. In addition to latitude, cold events frequency is closely linked to topography, with basins surrounded by high mountains being difficult to be affected by cold events, especially extreme cold events. In terms of month distribution, December was subject to the highest frequency of cold events and the longest duration of a single cold events process. 展开更多
关键词 Cold Events Spatio-Temporal Characteristics Winter China
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Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study 认领 引用
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作者 Zhiwei Zhang Guoqing Miao +5 位作者 Hang Song Hong Jiang Zhiming Li Dabing Li Xiaojuan Sun Yiren Chen 《World Journal of Engineering and Technology》 2015年第4期6-10,共5页
In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector ar... In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector are also compared and discussed. GaAs-based device shows a significant enhancement in detector with a better performance for a InGaAs photodetector compared to InP- based device. In addition, our results show that the device performance is influenced by the conduction band offset. This work proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high performance detector with optimally tuned band gap. 展开更多
关键词 InGaAs Detector Near-Infrared High Indium Content Dark Current
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Effects of internal noise on the spiking regularity of a clustered Hodgkin–Huxley neuronal network 认领 引用
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作者 Xiaojuan Sun 《Theoretical & Applied Mechanics Letters》 CAS 2014年第1期35-40,共6页
Spiking regularity in a clustered Hodgkin–Huxley（HH） neuronal network has been studied in this letter. A stochastic HH neuronal model with channel blocks has been applied as local neuronal model. Effects of the int... Spiking regularity in a clustered Hodgkin–Huxley（HH） neuronal network has been studied in this letter. A stochastic HH neuronal model with channel blocks has been applied as local neuronal model. Effects of the internal channel noise on the spiking regularity are discussed by changing the membrane patch size. We find that when there is no channel blocks in potassium channels, there exist some intermediate membrane patch sizes at which the spiking regularity could reach to a higher level. Spiking regularity increases with the membrane patch size when sodium channels are not blocked. Namely, depending on different channel blocking states, internal channel noise tuned by membrane patch size could have different influence on the spiking regularity of neuronal networks. 展开更多
关键词 spiking regularity internal noise clustered neuronal network Hodgkin–Huxley neuron
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Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision 认领 引用 被引量：5
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作者 Zhilin Liu Mingxiu Liu +6 位作者 Liujian Qi Nan Zhang Bin Wang Xiaojuan Sun Rongjun Zhang Dabing Li Shaojuan Li 《Light: Science & Applications》 SCIE EI CAS CSCD 2025年第3期721-731,共11页
Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier.Conventional polarization-sensitive photodetection relies on a combination of polarizing optical ele... Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier.Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors,which requires a substantial amount of space and manufacturing expenses.Although onchip polarized photodetectors have been realized in recent years based on two-dimensional(2D)materials with lowsymmetry crystal structures,they are limited by the intrinsic anisotropic property and thus the optional range of materials,the operation wavelength,and more importantly,the low anisotropic ratio,hindering their practical applications.In this work,we construct a versatile platform that transcends the constraints of material anisotropy,by integrating WSe2-based photodetector with MoS2-based field-effect transistor,delivering high-performance broadband polarization detection capability with orders of magnitude improvement in anisotropic ratio and on/off ratio.The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared(iR)band,reaching the level of existing applications.Meanwhile,the system achieves a significant improvement in photosensitivity,with an on/off ratio of over 1o3 in the IR band.Based on the above performance optimization,we demonstrated its polarization-modulated IR optical communication ability and polarized artificial vision applications with a high image recognition accuracy of~99%.The proposed platform provides a promising route for the development of the longsought minimized,high-performance,multifunctional optoelectronic systems. 展开更多
关键词 optical communication artificially modulated photodetector intrinsic anisotr standard photodetectorswhich onchip polarized photodetectors polarizing optical elements polarization sensitive detection
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Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications 认领 引用
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作者 Rui Sun Yuping Jia +9 位作者 Bo Lai Zhiming Shi Mingrui Liu Weili Yu Ke Jiang Shanli Zhang Shunpeng Lv Yang Chen Xiaojuan Sun Dabing Li 《Light: Science & Applications》 SCIE EI CAS CSCD 2025年第9期2422-2432,共11页
Quasi-two-dimensional(quasi-2D)metal halide perovskite(MHP)ferroelectrics,characterized by spontaneous polarization and semiconducting properties,hold promise for functional photoferroelectrics in applications such as... Quasi-two-dimensional(quasi-2D)metal halide perovskite(MHP)ferroelectrics,characterized by spontaneous polarization and semiconducting properties,hold promise for functional photoferroelectrics in applications such as optical storage and in-memory computing.However,typical quasi-2D perovskite films contain multiple quantum wells with random width distribution,which degrade optoelectronic properties and spontaneous polarization.Here,we introduce phase-pure quantum wells with uniform well width by incorporating the inorganic salt MnBr2,which effectively controls crystallization kinetics and restricts the nucleation of high n-phases,producing high-quality films.The resulting(BA)2CsPb2Br7(BA=C4H9NH3)film demonstrates ferroelectric hysteresis behavior,clear in-plane ferroelectric domain switching,and a high photoluminescence quantum efficiency(PLQE)of 88.7%.Significantly,we observed a nonvolatile,reversible in situ photoluminescence(PL)modulation of Mn2+in this ferroelectric MHP film under an applied electric field,attributed to lattice distortion from ferroelectric polarization orientation.These findings enabled the development of a simple system comprising gallium nitride(GaN)light emitting diodes(LEDs)and ferroelectric films to implement multi-state signal encoding and a logic AND gate.This work advances the fabrication of efficient ferroelectric MHP films and highlights their potential for advanced optoelectronic applications. 展开更多
关键词 spontaneous polarization optoelectronic properties tunable photoluminescence optical storage multi state optoelectronic applications spontaneous polarizationherewe quantum wells functional photoferroelectrics
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Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides 认领 引用 被引量：22
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作者 Ke Jiang Xiaojuan Sun +4 位作者 Zhiming Shi Hang Zang Jianwei Ben Hui-Xiong Deng Dabing Li 《Light: Science & Applications》 SCIE EI CSCD 2021年第4期671-680,共10页
Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their tunable wide band-gap,high breakdown field and energy density,excellent chemical and thermal stability.However,their applicati... Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their tunable wide band-gap,high breakdown field and energy density,excellent chemical and thermal stability.However,their application has been severely hindered by the low p-doping efficiency,which is ascribed to the ultrahigh acceptor activation energy originated from the low valance band maximum.Here,a valance band modulation mode is proposed and a quantum engineering doping method is conducted to achieve high-efficient p-type ultra-wide band-gap nitrides,in which GaN quantum-dots are buried in nitride matrix to produce a new band edge and thus to tune the dopant activation energy.By non-equilibrium doping techniques,quantum engineering doped AIGaN:Mg with Al content of 60%is successfully fabricated.The Mg activation energy has been reduced to about 21 meV,and the hole concentration reaches higher than 1018cm-3at room temperature.Also,similar activation energies are obtained in AIGaN with other Al contents such as 50%and 70%;indicating the universality of the quantum engineering doping method.Moreover,deep-ultraviolet light-emission diodes are fabricated and the improved performance further demonstrates the validity and merit of the method.With the quantum material growth techniques developing,this method would be prevalently available and tremendously stimulate the promotion of ultra-wide band-gap semiconductor-based devices. 展开更多
关键词 doping breakdown quantum
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Full-duplex light communication with a monolithic multicomponent system 认领 引用 被引量：13
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作者 Yongjin Wang Xin Wang +7 位作者 Bingcheng Zhu Zheng Shi Jialei Yuan Xumin Gao Yuhuai Liu Xiaojuan Sun Dabing Li Hiroshi Amano 《Light: Science & Applications》 SCIE EI CSCD 2018年第1期255-261,共7页
A monolithic multicomponent system is proposed and implemented on a III-nitride-on-silicon platform,whereby two multiple-quantum-well diodes(MQW-diodes)are interconnected by a suspended waveguide.Both MQW-diodes have ... A monolithic multicomponent system is proposed and implemented on a III-nitride-on-silicon platform,whereby two multiple-quantum-well diodes(MQW-diodes)are interconnected by a suspended waveguide.Both MQW-diodes have an identical low-In-content InGaN/Al0.10Ga0.90N MQW structure and are produced by the same fabrication process flow.When appropriately biased,both MQW-diodes operate under a simultaneous emission-detection mode and function as a transmitter and a receiver at the same time,forming an in-plane full-duplex light communication system.Real-time full-duplex audio communication is experimentally demonstrated using the monolithic multicomponent system in combination with an external circuit. 展开更多
关键词 communication monolithic diodes
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