Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO2 bilayer bas...Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO2 bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability.The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.Moreover,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-timedependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observations and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of~10;along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO:Ag/SiO2/p++-Si memristor can be realized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.展开更多
[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied...[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and (111) mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 (0.6 nm)/FePt (3 nm)]5/Ag (50 nm) films and highly (001)-oriented films can be obtained in the [SiO2 (2 nm)/FePt (3 nm)]5/Ag (50 nm) films.展开更多
The Ag/SiO2 nanoparticles had been successfully synthesized. The Ag/SiO2 nano- particles can be an excellent catalyst for the synthesis of ultraviolet absorber benzotriazole by catalytic hydrogenation. The synthesis r...The Ag/SiO2 nanoparticles had been successfully synthesized. The Ag/SiO2 nano- particles can be an excellent catalyst for the synthesis of ultraviolet absorber benzotriazole by catalytic hydrogenation. The synthesis route is very efficient with less pollution and excellent yields. It is also easy to industrialized production.展开更多
基金financially supported by the National Science Funds for Excellent Young Scholars of China(no.61822106)the Natural Science Foundation of China(no.U19A2070)。
摘要Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO2 bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability.The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.Moreover,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-timedependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observations and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of~10;along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO:Ag/SiO2/p++-Si memristor can be realized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.
基金Project(10574085) supported by the National Natural Science Foundation of ChinaProject(207020) supported by the Science Technology Key Project of the Ministry of Education, China
摘要[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and (111) mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 (0.6 nm)/FePt (3 nm)]5/Ag (50 nm) films and highly (001)-oriented films can be obtained in the [SiO2 (2 nm)/FePt (3 nm)]5/Ag (50 nm) films.
基金supported by research fund of Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province (No. AE201127)
摘要The Ag/SiO2 nanoparticles had been successfully synthesized. The Ag/SiO2 nano- particles can be an excellent catalyst for the synthesis of ultraviolet absorber benzotriazole by catalytic hydrogenation. The synthesis route is very efficient with less pollution and excellent yields. It is also easy to industrialized production.