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二维AlN对As和Cd吸附行为的第一性原理研究 认领 引用 被引量：1
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作者 莫秋燕 黄连帅 +2 位作者 张泓筠 荆涛 吴家隐 《原子与分子物理学报》 CAS 北大核心 2026年第3期145-152,共8页
本文采用密度泛函理论的方法深入探究了二维AlN材料对有毒重金属As和Cd的吸附特性和传感潜力.结果发现:相较于Cd,As与二维AlN间有更短的吸附距离和更高的吸附能,表明了一种较强吸附行为.通过对电子态密度的分析,发现As吸附导致As的p轨道... 本文采用密度泛函理论的方法深入探究了二维AlN材料对有毒重金属As和Cd的吸附特性和传感潜力.结果发现:相较于Cd,As与二维AlN间有更短的吸附距离和更高的吸附能,表明了一种较强吸附行为.通过对电子态密度的分析,发现As吸附导致As的p轨道与N的p轨道强烈杂化,形成杂化峰,产生了3μB磁矩.相反,Cd吸附体系未见磁矩产生,且电荷转移微乎其微.这些差异化的电子性质变化为As与Cd的选择性检测提供了依据.此外,与其他材料对比,室温下二维AlN单层吸附As和Cd后具有快速恢复时间,同时Cd的吸附能高于已有的材料,表明二维AlN具备良好的可重复使用性,适合作为室温下As和Cd检测的传感材料.因此,本研究不仅揭示了二维AlN对重金属As和Cd的高效选择性传感机制,也为开发低成本、环保的在线重金属监测材料提供了新的理论依据. 展开更多
关键词 二维AlN 第一性原理 重金属 传感器
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Direct growth of high-quality GaN on single-crystal AlN substrate and related thermal characterization 认领 引用
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作者 Yinghao Chen Hongcai Li +6 位作者 Genhao Liang Zhengguang Fang Jun Zhang Kai Wang Jiayu Dai Xiaoxiang Yu Lishan Zhao 《Journal of Semiconductors》 EI CAS CSCD 2026年第6期137-146,共10页
Bulk single-crystal aluminum nitride(BSC AlN)substrates are known to be ideal platforms for constructing highpower and DUV optoelectronic nitride devices.However,high-quality epitaxial growth of nitride films on BSC A... Bulk single-crystal aluminum nitride(BSC AlN)substrates are known to be ideal platforms for constructing highpower and DUV optoelectronic nitride devices.However,high-quality epitaxial growth of nitride films on BSC AlN and related characterization is still far from being well studied.The challenges and uncertainties in doing accurate thermal characterization on such heterostructures are not fully recognized.In this study,we successfully fabricated a buffer-free thin GaN/AlN heterostructure on a BSC AlN substrate via metal−organic chemical vapor deposition(MOCVD)technology.This heterostructure consists of a 140 nm-thick AlN homoepitaxial layer and a 480 nm-thick GaN epitaxial layer.Characterization results indicate that the prepared heterojunction has excellent crystal quality and smooth surface morphology.To accurately obtain the thermophysical parameters of the heterostructure,this study employed broadband frequency domain thermoreflectance(BB-FDTR)technology,and careful measurements with detailed data analysis were demonstrated.In addition to showing the feasibility of epitaxial growth of high-quality thin film GaN directly on BSC AlN substrates,this study also provides key experimental data for evaluating the heat dissipation advantages of GaN/AlN heterostructures. 展开更多
关键词 single-crystal AlN substrate GaN/AlN heterostructure broadband frequency domain thermoreflectance thermal properties
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Cu-Sn-Ti钎料钎焊AlN和Cu接头组织和性能分析 认领 引用
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作者 牛超楠 陈峻霄 +4 位作者 周海平 刘多 胡胜鹏 宋延宇 宋晓国 《焊接学报》 EI CAS CSCD 北大核心 2026年第5期53-62,共10页
采用Cu-Sn-Ti钎料实现了AlN陶瓷和Cu的钎焊连接,探究了工艺参数对AlN/Cu接头界面组织和性能的影响.在高温真空炉中进行钎焊,依据DSC曲线确定钎料熔化温度区间,使用SEM和EDS等手段观察接头界面形貌、元素分布和物相组成.结果表明,接头界... 采用Cu-Sn-Ti钎料实现了AlN陶瓷和Cu的钎焊连接,探究了工艺参数对AlN/Cu接头界面组织和性能的影响.在高温真空炉中进行钎焊,依据DSC曲线确定钎料熔化温度区间,使用SEM和EDS等手段观察接头界面形貌、元素分布和物相组成.结果表明,接头界面组织结构为AlN/TiN+TiCu/Ti2Cu+Ti2Sn+Cu(s,s)/Cu,随着钎焊温度升高或保温时间延长,钎缝区的金属间化合物层Ti2Sn相的厚度逐渐减小,而靠近AlN侧的界面反应层TiN厚度逐渐增加,分布状态由断续分布转变为连续分布.在钎焊温900℃、保温时间10 min时,接头抗剪强度达到最大40.77 MPa,断裂位置由断于钎缝界面处向AlN陶瓷侧转变,最终转变为断于AlN陶瓷内部.接头的热扩散系数随钎焊温度升高或保温时间延长呈现先增大后减小的趋势,在钎焊温度900℃、保温时间10 min时达到最大61.33 mm2/s. 展开更多
关键词 AlN陶瓷 钎焊 界面组织 力学性能 导热性能
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网状AlN/Al复合涂层的原位构筑及其抗激光烧蚀性能 认领 引用
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作者 高珊 于振宇 +4 位作者 贺志帅 朱文辉 殷凤仕 马霞 赵永峰 《表面技术》 EI CAS CSCD 北大核心 2026年第1期217-230,共14页
目的提升军事装备在高温环境下的激光防护性能。方法利用超音速火焰喷涂技术,在7A52铝合金表面制备一种三维网状AlN/Al复合涂层。通过X射线衍射仪、扫描电子显微镜、能谱仪等表征工具,对涂层的物相组成、微观结构、元素分布进行表征。... 目的提升军事装备在高温环境下的激光防护性能。方法利用超音速火焰喷涂技术,在7A52铝合金表面制备一种三维网状AlN/Al复合涂层。通过X射线衍射仪、扫描电子显微镜、能谱仪等表征工具,对涂层的物相组成、微观结构、元素分布进行表征。使用密度计、激光导热仪、显微硬度计及拉伸试验机等设备,对涂层的物理性能和力学性能进行测试。利用光纤激光器,测试涂层的抗激光烧蚀性能。结果制备的三维网状AlN/Al复合涂层组织致密,AlN粒子为纳米级,且彼此相连,呈三维网状分布。涂层的厚度在64~188μm范围内,硬度在130.7HV~201.3HV范围内,与基板的界面结合强度高于61.3 MPa。激光烧蚀结果显示,在激光辐照初期,涂层内网状Al N形成了连续的热传导通道,使热量均匀分布,抗激光烧蚀性能良好;随着激光辐照时间的延长,累积热输入超过了网状AlN散热阈值,涂层受热变形,但厚涂层中网状AlN的骨架支撑作用仍得以保持,可继续保护基板;在激光辐照后期,涂层中的Al N高温粗化呈棒状形貌,三维网状构型被破坏,涂层彻底失效。结论较厚的三维网状AlN/Al复合涂层可保持涂层的结构完整性,从而提高涂层的激光防护性能,可为新一代军事装备的防护涂层设计提供理论依据。 展开更多
关键词 激光防护 超音速火焰喷涂 三维网状AlN 复合涂层 抗激光烧蚀性能
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二维AlN中卤素(F,Cl,Br,I)修饰的第一性原理研究 认领 引用
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作者 莫秋燕 张颂 +2 位作者 张泓筠 荆涛 吴家隐 《原子与分子物理学报》 CAS 北大核心 2026年第2期130-136,共7页
采用密度泛函理论的第一性原理计算方法,研究了卤素元素(F、Cl、Br、I)修饰二维AlN的电子性质和磁性.研究表明,卤素元素(F、Cl、Br、I)修饰二维AlN后,体系表现出明显的半金属性质.从态密度图可以看出,自旋向上和自旋向下的态密度曲线出... 采用密度泛函理论的第一性原理计算方法,研究了卤素元素(F、Cl、Br、I)修饰二维AlN的电子性质和磁性.研究表明,卤素元素(F、Cl、Br、I)修饰二维AlN后,体系表现出明显的半金属性质.从态密度图可以看出,自旋向上和自旋向下的态密度曲线出现不对称性,表明修饰后的体系表现出一定的磁性.通过对修饰后体系的磁矩计算结果可以看出,随着原子半径沿修饰原子顺序F、Cl、Br、I增大,修饰原子对整个体系总磁矩的贡献也逐渐增加.同时,修饰原子周围的三个N原子也做出了重大贡献.因此,通过卤素元素的修饰,能够有效调控AlN的电子结构和磁性,使修饰后的AlN具有应用于新型自旋电子半导体器件的潜力. 展开更多
关键词 二维AlN 第一性原理 电子结构 磁性
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冷却速率和氮含量对高锰无磁钢中AlN夹杂物析出和长大行为的影响 认领 引用
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作者 杨新龙 张涛 +4 位作者 赵健 陈粤 成国光 陈兴润 潘吉祥 《特殊钢》 CAS 2026年第1期12-21,共10页
研究了冷却速率和氮含量对Fe-23Mn-2Al-0.08V钢中AlN夹杂物析出和长大的影响。AlN形貌主要为六边形和针状。随着冷却速率从36.66 K/s降低到0.71 K/s,AlN的等效直径从7.56μm增加到24.20μm,AlN的数量密度从203.01 mm-2减少到60.00 mm... 研究了冷却速率和氮含量对Fe-23Mn-2Al-0.08V钢中AlN夹杂物析出和长大的影响。AlN形貌主要为六边形和针状。随着冷却速率从36.66 K/s降低到0.71 K/s,AlN的等效直径从7.56μm增加到24.20μm,AlN的数量密度从203.01 mm-2减少到60.00 mm-2。冷却速率与AlN数量密度的关系为lnNv=29.848+0.453lnRC(R2=0.97)。元素的显微偏析分析表明,铝浓度在枝晶间区域较低,而在枝晶内较高,铝的偏析非常弱,几乎没有氮的偏析。热力学计算表明,当w[N]高于58×10-6时,AlN可以在凝固前析出。对AlN长大的预测结果可以很好地揭示其长大规律。当冷却速率为3.02、0.71 K/s时,w[N]≥58×10-6对AlN的尺寸影响可忽略不计,而冷却速率对AlN的尺寸有显著影响。 展开更多
关键词 Fe-23Mn-2Al-0.08V钢 AlN 冷却速率 氮含量 微观偏析
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AlN单晶片的单面机械抛光工艺研究 认领 引用
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作者 高飞 王英民 +2 位作者 程红娟 李晖 辛倩 《固体电子学研究与进展》 CAS 2026年第1期22-27,共6页
为了提升AlN单晶片在塑性去除模式下的加工效率,对AlN单晶的机械抛光工艺进行了系统试验。研究了磨盘材质、磨料粒径、研磨压力、研磨盘转速、磨盘开槽、磨料化学组分等工艺参数对AlN单晶片去除速率的影响规律。试验结果表明:树脂锡盘... 为了提升AlN单晶片在塑性去除模式下的加工效率,对AlN单晶的机械抛光工艺进行了系统试验。研究了磨盘材质、磨料粒径、研磨压力、研磨盘转速、磨盘开槽、磨料化学组分等工艺参数对AlN单晶片去除速率的影响规律。试验结果表明:树脂锡盘可以实现全塑性域加工;在采用树脂锡盘研磨时,随着金刚石粒径的增大,去除速率呈现了先增大后减小的趋势;树脂锡盘开槽平台宽度越小,去除速率越大且表面质量越好;通过在研磨液中添加三乙醇胺,可以通过促进AlN的水解反应提升去除速率。 展开更多
关键词 AlN单晶 机械抛光 材料去除速率 塑性去除 表面质量
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PtSSe/AlN heterojunctions with favorable photogenerated currents and structural stability 认领 引用
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作者 Zhen Cui Lannan Yan +2 位作者 Yuqiao Ren Junliang Yao Chenxing Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2026年第6期819-828,共10页
A comprehensive first-principles and density functional theory study was conducted to explore the band structure,differential charge redistribution,optical properties,and photoelectric detection characteristics of PtS... A comprehensive first-principles and density functional theory study was conducted to explore the band structure,differential charge redistribution,optical properties,and photoelectric detection characteristics of PtSSe/AlN heterojunctions.The results identify the PtSSe/AlN heterojunction as a structurally stable,type-Ⅱ semiconductor,demonstrating an indirect bandgap of 1.53 eV,and representing a typical van der Waals heterojunction capable of efficient electron–hole pair separation.The internal electric field induced by the interface serves to lower the barrier height,thus promoting carrier injection.The application of strain maintains the type-Ⅱ band alignment,ensuring high stability.Meanwhile,PtSSe/AlN heterojunctions have good light-harvesting capability in the ultraviolet to visible spectrum,exhibiting three pronounced absorption peaks within the visible spectral range.The self-powered photodetector based on this heterojunction achieves high photocurrent density under different polarized lights;when the incident light energy is 2.6 e V,the maximum value of the extinction coefficient is about 14.The results indicate the device's versatility for applications,including in photoelectric detectors,optical modulators,and sensors.This research provides theoretical foundations for developing novel photodetectors,establishes a robust basis for experimental studies and device fabrication,and holds promise for advancing high-performance multifunctional optoelectronic devices. 展开更多
关键词 PtSSe/AlN first principles heterojunction photodetector extinction ratio
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Compressive stress management for hillock-free AlGaN epitaxy on HTA-AlN templates using low-Al-content interlayer 认领 引用 被引量：1
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作者 Entao Zhang Jianwei Ben +5 位作者 Zikai Nie Shanli Zhang Yang Chen Ke Jiang Xiaojuan Sun Dabing Li 《Journal of Semiconductors》 EI CAS CSCD 2026年第2期88-95,共8页
High-temperature-annealed Al N(HTA-Al N) templates provide ideal substrates for high-quality Al Ga N epitaxy. However, the significant compressive stress accumulated within the Al Ga N layer makes it challenging to ac... High-temperature-annealed Al N(HTA-Al N) templates provide ideal substrates for high-quality Al Ga N epitaxy. However, the significant compressive stress accumulated within the Al Ga N layer makes it challenging to achieve a smooth surface free of hexagonal hillocks on these templates. To address this issue, we investigate the mechanism of compressive stress accumulation during the growth of Al Ga N-based epilayers on HTA-Al N templates using in-situ curvature analysis in this study. To verify the mechanism, a low-Al-content Al Ga N interlayer is introduced between the Al N epilayer and the subsequent Al Ga N epilayer. The larger a-plane lattice constant of this interlayer relative to the Al Ga N epilayer slows the accumulation rate of compressive stress. The hexagonal hillock can be effectively suppressed and the surface of Al Ga N epilayer can be significantly regulated by adopting various low-Al-content Al Ga N interlayers. This work provides a comprehension on the stress accumulation mechanism in Al Ga N epilayers and a feasible method to obtain hillock-free surface of Al Ga N epilayers on HTA-Al N templates,which will be beneficial for fabricating Al Ga N based devices. 展开更多
关键词 surface hillock AlGaN high temperature anneal AlN template
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高温退火对AlN晶体光学性质的影响研究 认领 引用
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作者 张颖 徐宗伟 +1 位作者 王增华 程红娟 《人工晶体学报》 CAS 北大核心 2026年第6期867-877,共11页
本文采用物理气相传输法生长AlN单晶,对其进行高温退火处理,通过调节高温退火时间、温度等条件,获得在深紫外波段具有高透过性能的AlN单晶,同步开展表面形貌、结晶质量及光学性质的表征。结果表明,高温退火工艺可有效降低AlN晶体的缺陷... 本文采用物理气相传输法生长AlN单晶,对其进行高温退火处理,通过调节高温退火时间、温度等条件,获得在深紫外波段具有高透过性能的AlN单晶,同步开展表面形貌、结晶质量及光学性质的表征。结果表明,高温退火工艺可有效降低AlN晶体的缺陷密度,进一步提升AlN晶体的结晶质量,(0002)面摇摆曲线的半峰全宽可由91.2″降低至28.5″。然而,退火温度过高(1900℃)会导致晶片表面出现热腐蚀形貌,深紫外及可见光区域均无光学透过性能。高温退火工艺对AlN晶片中心无色区域的光学性质无明显影响,对边缘有色区域光学透过性能提升显著。与未处理的AlN晶片相较,7 h、1800℃退火工艺对光学性质的提升效果最为显著,在265 nm处的透过率由23.59%提升至48.61%,吸收系数由45.26 cm-1降低至22.59 cm-1。本研究对AlN基光电器件的性能提升具有一定的理论指导。 展开更多
关键词 高温退火 AlN单晶 点缺陷 光学吸收 紫外透过率
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Extremely low sheet resistance of ultra-thin AlN barrier HEMTs by plasma-assisted molecular beam epitaxy 认领 引用
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作者 Li Liu Hanxiang Jia +6 位作者 Jiajie Pan Hao Ying Yiyuan Sun Lei Pan Bo Zhao Jun Liu Shuangzan Lu 《Journal of Semiconductors》 EI CAS CSCD 2026年第5期78-86,共9页
Al N/Ga N high-electron-mobility transistor(HEMT)equipped with ultra-thin Al N barrier epitaxial structures were grown on 6-inch and 8-inch Si-based Ga N templates via plasma-assisted molecular beam epitaxy(PAMBE).The... Al N/Ga N high-electron-mobility transistor(HEMT)equipped with ultra-thin Al N barrier epitaxial structures were grown on 6-inch and 8-inch Si-based Ga N templates via plasma-assisted molecular beam epitaxy(PAMBE).The Al N barrier thickness was systematically optimized to improve the properties of two-dimensional electron gas(2DEG).Structural and electrical characterizations were performed by atomic force microscopy(AFM),transmission electron microscopy(TEM),contact and non-contact Hall measurements.At an optimal Al N barrier thickness,an extremely low sheet resistance of 159.9Ω/□by contact Hall and 143.8Ω/□by non-contact Hall was achieved on the 6-inch HEMT wafer,marking a significant improvement over state-of-the-art Si-based Ga N HEMTs.The epitaxial surface exhibited excellent morphology with a root-mean-square(RMS)roughness of 0.45 nm.Moreover,cross-sectional TEM analysis of PAMBE-grown Al N/Ga N HEMT revealed an atomically sharp and structurally coherent heterointerface,which is critical for achieving high electron mobility and reduced scattering loss.In addition,the 8-inch HEMT demonstrated a sheet resistance(Rs)as low as 115Ω/□by non-contact Hall with a uniformity of 2.13%,outperforming competing technologies from other companies on the market. 展开更多
关键词 PAMBE HEMT ultra-thin AlN barrier sheet resistance 2DEG
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GaN RF HEMT on bulk single crystal AlN substrate with no buffer layer 认领 引用
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作者 Yinghao Chen Genhao Liang +5 位作者 Wenjun Liu Zhengguang Fang Yachao Zhang Jun Zhang Kai Wang Lishan Zhao 《Journal of Semiconductors》 EI CAS CSCD 2026年第5期121-128,共8页
In this letter we report the morphological,electrical and thermal transport properties of a high electron mobility transistor(HEMT)style epitaxial wafer,where an approximately 2000 nm thick GaN layer has been directly... In this letter we report the morphological,electrical and thermal transport properties of a high electron mobility transistor(HEMT)style epitaxial wafer,where an approximately 2000 nm thick GaN layer has been directly deposited on a bulk single crystal Al N(BCS AlN)substrate with no buffer layer in between,and also the experimental results of DC and RF properties of a HEMT device based on such a wafer.The sample achieved very smooth surface morphology and roughness down to Ra=0.172 nm over an area of 1μm×1μm in AFM measurements.Electrical transport measurements showed sheet carrier concentration of 7.3×1012cm-2,Hall mobility of 2220 cm2/(V·s)and sheet resistance of 386Ω/sq.The measured maximum trans-conductance Gmof the fabricated HEMT device was 250 m S/mm at a gate bias voltage of-1.8 V.With a gate length of 500 nm and a gate-to-drain distance of 4.7μm,the f T and fmax,derived from S-parameters measurements,are 25.9 and 54 GHz,respectively.Large-signal RF measurement exhibited a high linear power gain(Gp)of 25.2 d B and a peak output power(Pout)density of 7.2 W/mm@1.5 GHz,associated with a power-added efficiency(PAE)of 40.9%.Comparing with the structure with a 500 nm thick AlGaN buffer,the total thermal resistance of the structure in our device decreased by 44%.This work confirms the technical feasibility of fabricating GaN HEMT devices on BCS AlN substrates without any additional buffer layer,and the excellent electric and thermal transport properties of the simplified wafer structure indicate a bright future of BCS Al N-based Ga N HEMT devices in ultra-high-frequency and high-power-density nitride electronics. 展开更多
关键词 GaN HEMT wide band-gap semiconductor single-crystal AlN thermal resistance
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Compatibilize surface crack and crystallinity in 10-μm-thick AlN epilayer on 4-inch sapphire substrates 认领 引用
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作者 Tai Li Ziruo Wang +7 位作者 Ye Yuan Tao Wang Shangfeng Liu Tongxin Lu Shuai Liu Zhiwen Liang Qi Wang Xinqiang Wang 《Journal of Semiconductors》 EI CAS CSCD 2026年第7期124-131,共8页
Achieving aluminum nitride(AlN)epilayers with dislocation densities below 107 cm-2 on sapphire remains critical for ultraviolet(UV)optoelectronics applications.However,the lattice and thermal mismatches inherent... Achieving aluminum nitride(AlN)epilayers with dislocation densities below 107 cm-2 on sapphire remains critical for ultraviolet(UV)optoelectronics applications.However,the lattice and thermal mismatches inherent to heteroepitaxial growth hinder the simultaneous suppression of threading dislocations and surface cracking.In this work,a 10.2-μm-thick,4-inch AlN film was fabricated on an AlN/sapphire substrate.A strain-modulated buffer was embedded beneath the AlN epilayer to preintroduce a well-balanced compressive strain,which counteracted tensile strain accumulation during thick-layer growth while maintaining continuous two-dimensional epitaxy for effective defect suppression.This strain management strategy,combined with progressive dislocation annihilation as the layer thickness increased,yielded a surface dislocation density of 7.6×10~6cm-2and limited cracking to within approximately 2 mm from the wafer edge.This scalable and cost-effective approach enables the growth of crack-suppressed,high-quality AlN epilayers on sapphire,offering a practical pathway for UV optoelectronic devices in light of the current limitations of bulk AlN substrates. 展开更多
关键词 AlN/sapphire high crystalline-quality high-temperature annealing 4 inch wafer
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Measurement of far-infrared surface phonon polaritons in AlN nanowires via electron microscope 认领 引用
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作者 Chao He Ze Hua +7 位作者 Peiyi He Ruishi Qi Yuehui Li Ruiwen Shao Weikang Dong Ruochen Shi Yeliang Wang Peng Gao 《Chinese Physics B》 SCIE EI CAS CSCD 2026年第3期143-148,共6页
Surface phonon polaritons(SPhPs)exhibit promising advantages(e.g.,low loss,long lifetimes)for mid/far-infrared(MIR/FIR)nanophotonics.However,FIR SPhPs experiments remain challenging for conventional optics and scatter... Surface phonon polaritons(SPhPs)exhibit promising advantages(e.g.,low loss,long lifetimes)for mid/far-infrared(MIR/FIR)nanophotonics.However,FIR SPhPs experiments remain challenging for conventional optics and scatteringtype scanning near-field optical microscopy(s-SNOM)due to the lack of compatible light sources/detectors.In this work,we characterized~75-110 meV SPhPs in AlN nanowires using a monochromated scanning transmission electron microscope(STEM)equipped with electron energy loss spectroscopy(EELS).This technique provided exceptional 4.3 meV energy resolution and sub-angstrom spatial resolution.We observed the evolution of SPhP interference fringes with propagation distance,derived the dispersion curve,and clarified size effects on SPhP propagation by tuning AlN structure dimensions.Experimental-numerical cross-validation confirmed that the local continuum model(LCM)accurately describes AlN's SPhP behaviors.This work advances the understanding of FIR SPhPs in polar dielectrics and establishes a robust platform for studying FIR phonon polariton materials. 展开更多
关键词 AlN surface phonon polaritons(SPhPs) far-infrared STEM-EELS nanowires
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The limits of electrical transport in thin GaN channels on N-polar AlN 认领 引用
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作者 Yoann Robin Itsuki Furuhashi Markus Pristovsek 《Journal of Semiconductors》 EI CAS CSCD 2026年第7期105-115,共11页
We have systematically studied the impact of thickness on the electrical properties of thin GaN channels on N-polar AlN(0001)templates grown on sapphire.The observed increase in sheet carrier density with increasing G... We have systematically studied the impact of thickness on the electrical properties of thin GaN channels on N-polar AlN(0001)templates grown on sapphire.The observed increase in sheet carrier density with increasing GaN thickness can be quantitatively reproduced by calculations assuming a Fermi-level pinning about 0.8 eV below the conduction band.The mobility strongly increases until 6 nm which correlates with reduced overlap of the 2DEG wave function with the surface layer.The mobility then increases more gradually up to 10 nm,corresponding to a reduced fraction of the 2DEG within the first 0.5 nm near the AlN/GaN interface,namely,the region affected by interface roughness.The mobility saturates at approximately400 cm2·V-1·s-1,probably limited by dislocations and the overlap with deep traps inside the AlN back barrier.If the GaN thickness exceeds 15 nm,the mobility decreases,likely due to the onset of gradual relaxation and appearance of misfit dislocations.Finally,we note that the temperature-dependent mobility exhibits an unexpected contribution proportional to T-2 for all GaN channels on N-polar AlN,including those reported in the literature.Such observation may be explained by a 50%higher effective mass of the electron,which amplify the electron-phonon scattering,ultimately limiting the room-temperature mobility to about 750 cm2·V-1·s-1 and confining the sheet resistivity to values above 200Ω/□. 展开更多
关键词 N-polar AlN MOCVD growth carrier scattering HEMT thin GaN channel
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不同电极材料AlN基3D-MSM紫外探测器设计与仿真分析 认领 引用
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作者 李滔 饶浩勇 宋文青 《传感器与微系统》 北大核心 2026年第3期101-105,共5页
金属—半导体—金属(MSM)紫外探测器在紫外杀毒、光纤通信、导弹追踪、航空航天等方面具有广泛的应用。根据传统MSM紫外探测器,设计了一种基于氮化铝(AlN)的3D-MSM器件,然后设计了不同金属电极材料(Al-Al、Ni-Ni、Ni-Al)3D-MSM器件,利用... 金属—半导体—金属(MSM)紫外探测器在紫外杀毒、光纤通信、导弹追踪、航空航天等方面具有广泛的应用。根据传统MSM紫外探测器,设计了一种基于氮化铝(AlN)的3D-MSM器件,然后设计了不同金属电极材料(Al-Al、Ni-Ni、Ni-Al)3D-MSM器件,利用APSYS仿真软件分析了AlN基3D-MSM器件光电流、暗电流、响应度、时间光电响应及外量子效率等性能参数对器件性能的影响规律。仿真结果表明:3D-MSM器件的3D结构优化了器件的电场分布,有效提升了2个电极间的电场强度,这一改进有益于降低由Ni-Al电极材料在3D-MSM器件内因不同接触势垒高度造成的内部电场。同时,在刻蚀过程引入的刻蚀缺陷有助于金属与AlN接触界面合金的形成,这进一步降低了接触势垒,因此,3D-MSM器件有助于减少不同电极材料导致的器件性能差异。 展开更多
关键词 金属-半导体-金属 氮化铝 3D 紫外探测器 响应度
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一种基于VG-ALNS算法的过期药品逆向物流网络设计与优化方法 认领 引用
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作者 周越 徐劲松 《物流工程与管理》 2026年第2期42-45,57,共4页
针对当前过期药品回收体系存在网络覆盖不足、居民参与度低及运营效率低下等问题,文中创新性提出了一种基于VG-ALNS算法的过期药品逆向物流网络设计与优化方法。该网络架构通过整合密集的快递站点与传统药店形成混合布局,构建了包括药... 针对当前过期药品回收体系存在网络覆盖不足、居民参与度低及运营效率低下等问题,文中创新性提出了一种基于VG-ALNS算法的过期药品逆向物流网络设计与优化方法。该网络架构通过整合密集的快递站点与传统药店形成混合布局,构建了包括药品价值矩阵、分层杠杆式激励模型在内的一系列数学模型,并设计了一种VGALNS算法,完成了多目标优化。该算法通过价值门控缩减问题域、价值偏好算子引导搜索方向,实现了对高价值回收任务的快速响应与高效调度。实验表明,文中提出的四级网络架构及算法能够通过增加合理成本投入,实现回收总价值、居民参与度与网络运营效率等核心性能指标的显著提升,验证了该系统设计的有效性与优越性。 展开更多
关键词 逆向物流 四级过期药品网络 动态价值评估 VG-ALNS算法
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核用AlN陶瓷纤锌矿/闪锌矿相界面热边界电导的分子动力学研究 认领 引用
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作者 杨官祥 王立罡 +1 位作者 廖莉洪烨 赵强 《核科学与技术》 2026年第3期144-152,共9页
纤锌矿/闪锌矿(wurtzite/zincblende, w/zb)相界面是AlN陶瓷在强辐照环境中可能出现的亚稳微结构之一。为评估该类界面对跨界面热输运的影响,本文以Al端面w-AlN (0001)//N端面zb-AlN (111)相界面为研究对象,采用非平衡分子动力学方法(NE... 纤锌矿/闪锌矿(wurtzite/zincblende, w/zb)相界面是AlN陶瓷在强辐照环境中可能出现的亚稳微结构之一。为评估该类界面对跨界面热输运的影响,本文以Al端面w-AlN (0001)//N端面zb-AlN (111)相界面为研究对象,采用非平衡分子动力学方法(NEMD)计算热边界电导,并结合投影态密度(PDOS)、谱重叠因子和界面附近逐层原子统计分析热阻来源。结果表明:在300 K条件下,界面附近出现明显温度跳变,热边界电导G ≈ 2.55 GW/(m²∙K);两侧体区谱重叠因子S = 0.6829,说明体相振动态失配不足以解释该界面的热阻;界面核心区均方根偏差较体区增加约12%,且热阻分布在界面两侧若干原子层范围内。结果提示,近界面区域的局域散射和传输效率降低是该模型界面热阻的重要来源,可为核用AlN陶瓷中辐照诱导相界面的热输运退化分析提供原子尺度参考。 展开更多
关键词 AlN 相界面 热边界电导 分子动力学 投影态密度 辐照损伤
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ALNS求解车辆无人机联合配送路径优化问题 认领 引用
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作者 高其琛 《中国储运》 2026年第5期192-193,共2页
传统的货物配送模式面临效率偏低、成本偏高的压力。而无人机在快递物流末端配送领域具有极大的发展潜力。已有学者提出卡车与无人机联合配送的新模式,并结合该问题特点建立模型、设计算法求解。但由于该问题属于NP-Hard问题,求解比较... 传统的货物配送模式面临效率偏低、成本偏高的压力。而无人机在快递物流末端配送领域具有极大的发展潜力。已有学者提出卡车与无人机联合配送的新模式,并结合该问题特点建立模型、设计算法求解。但由于该问题属于NP-Hard问题,求解比较复杂。因此,本文首先利用节约算法与贪婪思想得到初始解,然后用ALNS算法进行改进,最终得到该问题的较优解。 展开更多
关键词 路径优化 车辆无人机联合配送 ALNS算法
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Dichromatic fluorescent splicing color wheel:Enabling high-quality laser lighting on high thermal conductivity AlN substrate 认领 引用 被引量：2
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作者 Yanrong Liang Xiangjia Sun +7 位作者 Tongtong Zhu Haitao Wang Shuo Wang Xiaojuan Liang Weidong Xiang Weiwei Huan Jie Li Junlong Wang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2025年第27期129-138,共10页
In recent years,the development of solid-state lighting devices has increasingly shifted towards high-power laser illumination,making it imperative to develop fluorescent conversion materials with exceptional thermal ... In recent years,the development of solid-state lighting devices has increasingly shifted towards high-power laser illumination,making it imperative to develop fluorescent conversion materials with exceptional thermal stability and luminous quality.In this study,we introduced a highly reflective TiO2 substrate in combination with a high thermal conductivity AlN substrate to design a Ce:YAG-PiG-TiO2-AlN Film(Ce:YAG PTAF)color converter with outstanding photothermal performance.Remarkably,the thermal conductivity of this material reaches 48.28 W m-1 K-1.Notably,the optimized PTAF can withstand a high-power output of up to 12.14 W in a static environment,with a maximum luminous flux(LFmax)of 2284.6 lm and maximum luminous efficacy(LEmax)of 222.35 lm W-1,showcasing its excellent optical properties.Furthermore,the fabricated Ce:YAG-PiG-TiO2-AlN-Wheel(Ce:YAG PTAW),equipped with a motor operating at 7200 r/min,emits an extraordinary brightness of 4404 lm under 88 W of ultra-high laser irradiation,with stability surpassing that of commercial silicone color wheels,thanks to its superior Li2O-Al2O3-SiO2(LAS)glass system.Interestingly,we designed an innovative spatially separated two-color segmented wheel structure,effectively mitigating the photon reabsorption phenomenon caused by the overlap of the fluorescent powder absorption peaks.When the ratio of Ce:YAG to Ce:GdYAG is 240:120,it yields white light with a color rendering index(CRI)of 80.2,and luminous flux remaining at 3317.8 lm.When encapsulated in a reflective module,it accurately reflects the true color states of objects.These results collectively indicate that both Ce:YAG PTAF and PTAW possess significant application potential in the realm of high-power laser illumination. 展开更多
关键词 Ce:YAG AlN substrate Laser lighting Dichromatic fluorescent splicing color wheel
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