Semiconductor colloidal quantum wells(CQWs)with atomic-precision layer thickness are rapidly gaining attention for next-generation optoelectronic applications due to their tunable optical and electronic properties.In ...Semiconductor colloidal quantum wells(CQWs)with atomic-precision layer thickness are rapidly gaining attention for next-generation optoelectronic applications due to their tunable optical and electronic properties.In this study,we investigate the dielectric and optical characteristics of CdSe CQWs with monolayer numbers ranging from 2 to 7,synthesized via thermal injection and atomic layer(c-ALD)deposition techniques.Through a combination of spectroscopic ellipsometry(SE)and first-principles calculations,we demonstrate the significant tunability of the bandgap,refractive index,and extinction coefficient,driven by quantum confinement effects.Our results show a decrease in bandgap from 3.1 to 2.0 eV as the layer thickness increases.Furthermore,by employing a detailed analysis of the absorption spectra,accounting for exciton localization and asymmetric broadening,we precisely capture the relationship between monolayer number and exciton binding energy.These findings offer crucial insights for optimizing CdSe CQWs in optoelectronic device design by leveraging their layer-dependent properties.展开更多
CdSe nanoplatelets(NPLs)are promising candidates for on-chip light sources,yet their performance is hindered by surface defects and inefficient optical gain.Herein,we demonstrate that CdSeS crown passivation significa...CdSe nanoplatelets(NPLs)are promising candidates for on-chip light sources,yet their performance is hindered by surface defects and inefficient optical gain.Herein,we demonstrate that CdSeS crown passivation significantly enhances the photophysical property of CdSe NPLs.Laser spectroscopy techniques reveal suppressed electronic and hole trapping at lateral surfaces,leading to a 4.2-fold increase in photoluminescence quantum yield and a shortened emission lifetime from13.5 to 4.8 ns.In addition,amplified spontaneous emission is achieved under nanosecond pulse pumping,with thresholds of0.75 to 0.16 mJ/cm2for CdSe and CdSe/CdSeS NPLs,respectively.By integrating CdSe/CdSeS NPLs with high-refractiveindex SiO2scatters,coherent random lasing is realized at a threshold of 0.21 mJ/cm2.These findings highlight the critical role of lateral surface passivation in optimizing optical gain and pave the way for low-cost,multifunctional nanophotonic devices.展开更多
A new and convenient route is developed to synthesize CdSe and core-shell CdSe/CdS quantum dots(QDs) in aqueous solution.The gaseous precursors,H2Se and H2S,generated on-line by reducing SeO 3 2à with NaBH 4 an...A new and convenient route is developed to synthesize CdSe and core-shell CdSe/CdS quantum dots(QDs) in aqueous solution.The gaseous precursors,H2Se and H2S,generated on-line by reducing SeO 3 2à with NaBH 4 and the reaction between Na 2 S and diluted H2SO 4,are used to form high-quality CdSe and CdSe/CdS QDs,respectively.The synthesized water-soluble CdSe and CdSe/CdS QDs possess high quantum yield(3% and 20%) and narrow full-width-at-half-maximum(43 nm and 38 nm).The synthesis process is easily reproducible with simple apparatus and low-toxic chemicals,and can be readily extended to the large-scale aqueous synthesis of QDs.展开更多
Toxicities of CdSe and CdSe/CdS quantum dots(QDs)synthesized by ultrasound-assisted methods were investigated in vitro and in vivo.Five human cell lines were used to assess the cytotoxicity of as-prepared CdSe and CdS...Toxicities of CdSe and CdSe/CdS quantum dots(QDs)synthesized by ultrasound-assisted methods were investigated in vitro and in vivo.Five human cell lines were used to assess the cytotoxicity of as-prepared CdSe and CdSe/CdS by assays of MTT viability,red blood cell hemolysis,flow cytometry,and fluorescence imaging.The results show that these QDs may be cytotoxic by their influence in S and G2 phases in cell cycles.The cytotoxicity of QDs depends on both the physicochemical properties and related to target cells.展开更多
Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample sep...Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,展开更多
The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline (PAN) film. The relation between the performance and internal ba...The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline (PAN) film. The relation between the performance and internal band structure of such film-covered PAN/CdSe electrode was studied by the electrochemical modulation reflectance spectrum (EMRS). EMRS of both CdSe and PAN/CdSe electrodes in K4Fe(CN)6/K3Fe(CN)6 solution exhibited typical France-Keidysh oscillations, by which the values of the energy gap and flat band potential were determined. The EMRS results indicated that the energy band structure of CdSe electrode was not changed after coated with PAN film, so that the photoelectrochemical characteristic of PAN/CdSe electrode was rather similar to that of CdSe electrode.展开更多
CdSe films are of great interest for use in thin film photoelectric devices. A simple chemical precipitation method is adopted for the first time to synthesise CdSe powder. Films on glass obtained at different substra...CdSe films are of great interest for use in thin film photoelectric devices. A simple chemical precipitation method is adopted for the first time to synthesise CdSe powder. Films on glass obtained at different substrate temperatures TS such as 300, 373, 423 and 473 K have been characterised by X-ray diffraction, optical absorption and Hall measurements.展开更多
基金supported by the National Natural Science Foundation of China(62205180)the Natural Science Foundation of Shandong Province(ZR2022QF029)the Taishan Scholar Program of Shandong Province(Young Scientist).
摘要Semiconductor colloidal quantum wells(CQWs)with atomic-precision layer thickness are rapidly gaining attention for next-generation optoelectronic applications due to their tunable optical and electronic properties.In this study,we investigate the dielectric and optical characteristics of CdSe CQWs with monolayer numbers ranging from 2 to 7,synthesized via thermal injection and atomic layer(c-ALD)deposition techniques.Through a combination of spectroscopic ellipsometry(SE)and first-principles calculations,we demonstrate the significant tunability of the bandgap,refractive index,and extinction coefficient,driven by quantum confinement effects.Our results show a decrease in bandgap from 3.1 to 2.0 eV as the layer thickness increases.Furthermore,by employing a detailed analysis of the absorption spectra,accounting for exciton localization and asymmetric broadening,we precisely capture the relationship between monolayer number and exciton binding energy.These findings offer crucial insights for optimizing CdSe CQWs in optoelectronic device design by leveraging their layer-dependent properties.
基金supported by the National Natural Science Foundation of China(Grant No.62174079)Guangdong Provincial Quantum Science Strategic Initiative(Grant No.GDZX2404006)Science,Technology and Innovation Commission of Shenzhen Municipality(Grant No.JCYJ20220530113015035)。
摘要CdSe nanoplatelets(NPLs)are promising candidates for on-chip light sources,yet their performance is hindered by surface defects and inefficient optical gain.Herein,we demonstrate that CdSeS crown passivation significantly enhances the photophysical property of CdSe NPLs.Laser spectroscopy techniques reveal suppressed electronic and hole trapping at lateral surfaces,leading to a 4.2-fold increase in photoluminescence quantum yield and a shortened emission lifetime from13.5 to 4.8 ns.In addition,amplified spontaneous emission is achieved under nanosecond pulse pumping,with thresholds of0.75 to 0.16 mJ/cm2for CdSe and CdSe/CdSeS NPLs,respectively.By integrating CdSe/CdSeS NPLs with high-refractiveindex SiO2scatters,coherent random lasing is realized at a threshold of 0.21 mJ/cm2.These findings highlight the critical role of lateral surface passivation in optimizing optical gain and pave the way for low-cost,multifunctional nanophotonic devices.
摘要A new and convenient route is developed to synthesize CdSe and core-shell CdSe/CdS quantum dots(QDs) in aqueous solution.The gaseous precursors,H2Se and H2S,generated on-line by reducing SeO 3 2à with NaBH 4 and the reaction between Na 2 S and diluted H2SO 4,are used to form high-quality CdSe and CdSe/CdS QDs,respectively.The synthesized water-soluble CdSe and CdSe/CdS QDs possess high quantum yield(3% and 20%) and narrow full-width-at-half-maximum(43 nm and 38 nm).The synthesis process is easily reproducible with simple apparatus and low-toxic chemicals,and can be readily extended to the large-scale aqueous synthesis of QDs.
基金supported by National Natural Science Foundation of China(No.60976004)Shanghai Municipal Commission for Science and Technology(No.09JC1405300)
摘要Toxicities of CdSe and CdSe/CdS quantum dots(QDs)synthesized by ultrasound-assisted methods were investigated in vitro and in vivo.Five human cell lines were used to assess the cytotoxicity of as-prepared CdSe and CdSe/CdS by assays of MTT viability,red blood cell hemolysis,flow cytometry,and fluorescence imaging.The results show that these QDs may be cytotoxic by their influence in S and G2 phases in cell cycles.The cytotoxicity of QDs depends on both the physicochemical properties and related to target cells.
摘要Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,
摘要The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline (PAN) film. The relation between the performance and internal band structure of such film-covered PAN/CdSe electrode was studied by the electrochemical modulation reflectance spectrum (EMRS). EMRS of both CdSe and PAN/CdSe electrodes in K4Fe(CN)6/K3Fe(CN)6 solution exhibited typical France-Keidysh oscillations, by which the values of the energy gap and flat band potential were determined. The EMRS results indicated that the energy band structure of CdSe electrode was not changed after coated with PAN film, so that the photoelectrochemical characteristic of PAN/CdSe electrode was rather similar to that of CdSe electrode.
摘要CdSe films are of great interest for use in thin film photoelectric devices. A simple chemical precipitation method is adopted for the first time to synthesise CdSe powder. Films on glass obtained at different substrate temperatures TS such as 300, 373, 423 and 473 K have been characterised by X-ray diffraction, optical absorption and Hall measurements.