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Manufacture and applications of GaN-based piezotronic and piezo-phototronic devices 认领 引用
1
作者 Jianan Niu Jiangwen Wang +3 位作者 Wei Sha Yong Long Bei Ma Weiguo Hu 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2025年第1期130-149,共20页
Driven by the urgent demands for information technology,energy,and intelligent industry,third-generation semiconductor GaN has emerged as a pivotal component in electronic and optoelectronic devices.Fundamentally,piez... Driven by the urgent demands for information technology,energy,and intelligent industry,third-generation semiconductor GaN has emerged as a pivotal component in electronic and optoelectronic devices.Fundamentally,piezoelectric polarization is the most essential feature of GaN materials.Incorporating piezotronics and piezo-phototronics,GaN materials synergize mechanical signals with electrical and optical signals,thereby achieving multi-field coupling that enhances device performance.Piezotronics regulates the carrier transport process in micro-nano devices,which has been proven to significantly improve the performance of devices(such as high electron mobility transistors and microLEDs)and brings many novel applications.This review examines GaN material properties and the theoretical foundations of piezotronics and phototronics.Furthermore,it delves into the fabrication and integration processes of GaN devices to achieve state-of-the-art performance.Additionally,this review analyzes the impact of introducing three-dimensional stress and regulatory forces on the electrical and optical output performance of devices.Moreover,it discusses the burgeoning applications of GaN devices in neural sensing,optoelectronic output,and energy harvesting.The potential of piezotroniccontrolled GaN devices provides valuable insights for future research and the development of multi-functional,diversified electronic devices. 展开更多
关键词 piezotronics piezo-phototronics GaN-based device manufacture
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Wafer-level GaN-based nanowires photocatalyst for water splitting 认领 引用
2
作者 Kun Wang Jiaxuan Qiu +8 位作者 Zefei Wu Yang Liu Yongqi Liu Xiangpeng Chen Bao Zang Jianmei Chen Yunchao Lei Longlu Wang Qiang Zhao 《Chinese Chemical Letters》 SCIE CAS CSCD 2025年第3期27-36,共10页
In recent years,the development of wafer-level GaN nanowires photocatalyst loaded onto silicon substrates has progressed rapidly depending on its simplicity of instrumentation,collection and separation from the water.... In recent years,the development of wafer-level GaN nanowires photocatalyst loaded onto silicon substrates has progressed rapidly depending on its simplicity of instrumentation,collection and separation from the water.Accordingly,the wafer-level GaN-based nanowires(GaN NWs)photocatalyst can be a fabulous candidate for the application in the field of photocatalytic hydrogen evolution reaction(PHER)and provides a novel route to address the environmental and energy crisis.Herein,a range of innovative strategies to improve the performance of GaN NWs photocatalyst are systematically summarized.Then,the solar-to-hydrogen conversion efficiency,the characteristics of GaN NWs system,the cost of the origin material required,as well as the stability,activity and the corrosion resistance to seawater are discussed in detail as some of the essential conditions for advancing its large-scale industry-friendly application.Last but not least,we provide the potential application of this system for splitting seawater to produce hydrogen and point out the direction for overcoming the barriers to future industrial-scale implementation. 展开更多
关键词 Wafer-level GaN-based nanowires photocatalyst Photocatalytic hydrogen evolution reaction Solar-to-hydrogen conversion efficiency Large-scale industry-friendly application Seawater splitting
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AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties 认领 引用
3
作者 Zhizhong Wang Jingting He +9 位作者 Fuping Huang Xuchen Gao Kangkai Tian Chunshuang Chu Yonghui Zhang Shuting Cai Xiaojuan Sun Dabing Li Xiao Wei Sun Zi-Hui Zhang 《Journal of Semiconductors》 EI CAS CSCD 2025年第9期51-61,共11页
In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n+-GaN cap layer.With the developed physical models,we find that the n+-GaN cap layer prov... In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n+-GaN cap layer.With the developed physical models,we find that the n+-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm2.We also adopt the trenched n+-GaN structure such that partial of the n+-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si3N4layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10−5A·cm−2and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm−2.Our investigations also find that the pre-deposited Si3N4layer helps suppress the electron capture and transport processes,which enables the reduced dynamic Ron,sp. 展开更多
关键词 AlGaN/GaN-based Schottky barrier diodes(SBDs) n+-GaN cap layer Si3N4protective layer
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Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000h 认领 引用 被引量：6
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作者 Feng Liang Jing Yang +9 位作者 Degang Zhao Zongshun Liu Jianjun Zhu Ping Chen Desheng Jiang Yongsheng Shi Hai Wang Lihong Duan Liqun Zhang Hui Yang 《Journal of Semiconductors》 CAS CSCD 2019年第2期39-42,共4页
GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ri... GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature(25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively.In addition, the threshold current density and voltage are as small as 1.46 kA/cm^2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation. 展开更多
关键词 GaN-based blue-violet laser diodes long lifetime threshold voltage
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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs 认领 引用 被引量：8
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作者 张凯 曹梦逸 +5 位作者 雷晓艺 赵胜雷 杨丽媛 郑雪峰 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第9期574-578,共5页
A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate （FP） techniques to enhance the frequenc... A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate （FP） techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simul- taneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 gm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FE This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications. 展开更多
关键词 GaN-based HEMTs breakdown characteristics field plates power gain
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Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching 认领 引用 被引量：9
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作者 何安和 章勇 +3 位作者 朱学绘 陈献文 范广涵 何苗 《Chinese Physics B》 SCIE EI CAS 2010年第6期551-555,共5页
GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etch... GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etching technology using a monolayer of nickel （Ni） nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness. 展开更多
关键词 GaN-based light-emitting diodes nickel nanoparticle extraction efficiency surface roughening
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Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers 认领 引用 被引量：6
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作者 蔡金鑫 孙慧卿 +2 位作者 郑欢 张盼君 郭志友 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第5期630-633,共4页
GaN-based multiple quantum well light-emitting diodes （LEDs） with conventional and superlattice barriers have been investigated numerically. Simulation results demonstrate using InGaN/GaN superlattices as barriers c... GaN-based multiple quantum well light-emitting diodes （LEDs） with conventional and superlattice barriers have been investigated numerically. Simulation results demonstrate using InGaN/GaN superlattices as barriers can effectively enhance performances of the GaN-Based LEDs, mainly owing to the improvement of hole injection and transport among the MQW active region. Meanwhile, the improved electron capture decreases the electron leakage and alleviates the efficiency droop. The weak polarization field induced by the superlattice structure strengthens the intensity of the emission spectrum and leads to a blue-shift relative to the conventional one. 展开更多
关键词 superlattice barrier numerical simulation hole injection GaN-based LED
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Progress and prospects of GaN-based LEDs using nanostructures 认领 引用 被引量：4
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作者 赵丽霞 于治国 +6 位作者 孙波 朱石超 安平博 杨超 刘磊 王军喜 李晋闽 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期83-94,共12页
Progress with GaN-based light emitting diodes （LEDs） that incorporate nanostructures is reviewed, especially the re- cent achievements in our research group. Nano-patterned sapphire substrates have been used to grow... Progress with GaN-based light emitting diodes （LEDs） that incorporate nanostructures is reviewed, especially the re- cent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an A1N template layer for deep-ultraviolet （DUV） LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostruc- tures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostruc- tures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication. 展开更多
关键词 GaN-based light emitting diodes （LEDs） nanostructure nano-patterned sapphire substrate sur-face plasmon
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31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure 认领 引用 被引量：11
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作者 Zengyi Xu Wenqing Niu +12 位作者 Yu Liu Xianhao Lin Jifan Cai Jianyang Shi Xiaolan Wang Guangxu Wang Jianli Zhang Fengyi Jiang Zhixue He Shaohua Yu Chao Shen Junwen Zhang Nan Chi 《Opto-Electronic Science》 2023年第5期12-24,共13页
Although the 5G wireless network has made significant advances,it is not enough to accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras.As a result,emerging technologies in higher fr... Although the 5G wireless network has made significant advances,it is not enough to accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras.As a result,emerging technologies in higher frequencies including visible light communication(VLC),are becoming a hot topic.In particular,LED-based VLC is foreseen as a key enabler for achieving data rates at the Tb/s level in indoor scenarios using multi-color LED arrays with wavelength division multiplexing(WDM)technology.This paper proposes an optimized multi-color LED array chip for high-speed VLC systems.Its long-wavelength GaN-based LED units are remarkably enhanced by V-pit structure in their efficiency,especially in the“yellow gap”region,and it achieves significant improvement in data rate compared with earlier research.This work investigates the V-pit structure and tries to provide insight by introducing a new equivalent circuit model,which provides an explanation of the simulation and experiment results.In the final test using a laboratory communication system,the data rates of eight channels from short to long wavelength are 3.91 Gb/s,3.77 Gb/s,3.67 Gb/s,4.40 Gb/s,3.78 Gb/s,3.18 Gb/s,4.31 Gb/s,and 4.35 Gb/s(31.38 Gb/s in total),with advanced digital signal processing(DSP)techniques including digital equalization technique and bit-power loading discrete multitone(DMT)modulation format. 展开更多
关键词 GaN-based LED LED array VLC V-pit sidewall quantum well high-frequency response
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Dielectric thin films for GaN-based high-electron-mobility transistors 认领 引用 被引量：3
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作者 Yan-Rong Li Xing-Zhao Liu +3 位作者 Jun Zhu Ji-Hua Zhang Lin-Xuan Qian Wan-Li Zhang 《Rare Metals》 SCIE EI CAS CSCD 2015年第6期371-380,共10页
The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors （HEMTs） were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface p... The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors （HEMTs） were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas （2DEG） in the A1GaN/GaN hetero-structures were ana- lyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device perfor- mance improvement of the A1GaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric LiNbO3 and the fluorinated A1203, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaNbased HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode. 展开更多
关键词 GaN-based HEMTs Surface passivation Gate dielectrics Enhancement-mode HEMTs High-permittivity field plate
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Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions 认领 引用 被引量：3
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作者 Wei Mao Hai-Yong Wang +7 位作者 Peng-Hao Shi Xiao-Fei Wang Ming Du Xue-Feng Zheng Chong Wang Xiao-Hua Ma Jin-Cheng Zhang Yue Hao 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第4期426-431,共6页
A novel Ga N-based vertical heterostructure field effect transistor（HFET） with nonuniform doping superjunctions（non-SJ HFET） is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance（RonA... A novel Ga N-based vertical heterostructure field effect transistor（HFET） with nonuniform doping superjunctions（non-SJ HFET） is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance（RonA） at no expense of breakdown voltage（BV）.The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions（un-SJ HFET）.A physically intrinsic mechanism for the nonuniform doping superjunction（non-SJ） to further reduce RonA at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the RonA on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in RonA depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in RonA could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing RonA and provide a useful reference for further developing the Ga N-based vertical HFETs. 展开更多
关键词 GaN-based vertical HFETs nonuniform doping superjunctions minimized specific on-resistance breakdown voltage
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Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier 认领 引用 被引量：3
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作者 马晓华 吕敏 +4 位作者 庞磊 姜元祺 杨靖治 陈伟伟 刘新宇 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第2期452-456,共5页
The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back ... The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage （Vds） and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current. 展开更多
关键词 kink effect deep levels hot electrons GaN-based HEMT
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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors(HEMTs) 认领 引用 被引量：4
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作者 范隆 郝跃 +3 位作者 赵元富 张进城 高志远 李培咸 《Chinese Physics B》 SCIE EI CAS 2009年第7期2912-2919,共8页
Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,we set up a radiation damage model of AlGaN/GaN high elec... Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,we set up a radiation damage model of AlGaN/GaN high electron mobility transistor （HEMT） to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously considering the degradation in mobility. Our calculated results,consistent with the experimental results,indicate that thin AlGaN barrier layer,high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HEMT;when the acceptor concentration induced is less than 10^14cm-3,the shifts in threshold voltage are not obvious;only when the acceptor concentration induced is higher than 10^16cm-3,will the shifts of threshold voltage remarkably increase;the increase of threshold voltage,resulting from radiation induced acceptor,mainly contributes to the degradation in drain saturation current of the current-voltage （Ⅰ-Ⅴ） characteristic,but has no effect on the transconductance in the saturation area. 展开更多
关键词 GaN-based high electron mobility transistor （HEMT） radiation acceptor defects
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Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes 认领 引用 被引量：3
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作者 杨辉 陈良惠 +16 位作者 张书明 种明 朱建军 赵德刚 叶小军 李德尧 刘宗顺 段俐宏 赵伟 王海 史永生 曹青 孙捷 陈俊 刘素英 金瑞琴 梁骏吾 《Journal of Semiconductors》 CAS 北大核心 2005年第2期414-417,共4页
Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor depositi... Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180″ and 185″ for (0002) symmetric reflection and (10 12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405 9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes. 展开更多
关键词 metalorganic chemical vapor deposition GaN-based laser diodes multiple quantum wells ridge geometry structure threshold current density
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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor 认领 引用 被引量：2
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作者 毛维 佘伟波 +11 位作者 杨翠 张超 张进成 马晓华 张金风 刘红侠 杨林安 张凯 赵胜雷 陈永和 郑雪峰 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第8期487-494,共8页
In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mob... In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc. 展开更多
关键词 analytical model of GaN-based field-plated HEMT polarization effect potential electric field
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Performance Improvement of GaN-Based Violet Laser Diodes 认领 引用 被引量：3
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作者 赵德刚 江德生 +5 位作者 乐伶聪 杨静 陈平 刘宗顺 朱建军 张立群 《Chinese Physics Letters》 SCIE EI CAS CSCD 2017年第1期98-101,共4页
The influences of InGaN/GaN multiple quantum wells (MQWs) and AlGaN electron-blocking layers (EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two di... The influences of InGaN/GaN multiple quantum wells (MQWs) and AlGaN electron-blocking layers (EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature growth of InGaN well and GaN barrier layers has a positive effect on the threshold current and slope efficiency of laser diodes, indicating that the quality of MQWs is improved. In addition, the performance of GaN laser diodes could be further improved by increasing Al content in the AlGaN EBL due to the fact that the electron leakage current could be reduced by properly increasing the barrier height of AlGaN EBL. The violet laser diode with a peak output power of 20 W is obtained. 展开更多
关键词 GaN Performance Improvement of GaN-Based Violet Laser Diodes
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Influence of patterned TiO_2/SiO_2 dielectric multilayers for back and front mirror facets on GaN-based laser diodes 认领 引用 被引量：1
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作者 陈伟华 胡晓东 +6 位作者 代涛 李睿 叶学敏 赵太平 杜为民 杨志坚 张国义 《Chinese Physics B》 SCIE EI CAS 2008年第9期3363-3366,共4页
Ridge InGaN multi-quantum-well-structure （MQW） edge-emitting laser diodes （LDs） were grown on （0001） sapphire substrates by low-pressure metal-organic chemical vapour deposition （MOCVD）. The dielectric TiO2/Si... Ridge InGaN multi-quantum-well-structure （MQW） edge-emitting laser diodes （LDs） were grown on （0001） sapphire substrates by low-pressure metal-organic chemical vapour deposition （MOCVD）. The dielectric TiO2/SiO2 front and back facet coatings as cavity mirror facets of the LDs have been deposited with electron-beam evaporation method. The reflectivity of the designed front coating is about 50% and that of the back high reflective coating is as high as 99.9%. Under pulsed current injection at room temperature, the influences of the dielectric facets were discussed. The threshold current of the ridge GaN-based LDs was decreased after the deposition of the back high reflective dielectric mirrors and decreased again after the front facets were deposited. Above the threshold, the slope efficiency of the LDs with both reflective facets was larger than those with only back facets and without any reflective facets. It is important to design the reflectivity of the front facets for improving the performance of GaN-based LDs. 展开更多
关键词 dielectric multilayers GaN-based LD stimulated emission threshold current
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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNχgate dielectric 认领 引用 被引量：1
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作者 Ya-Wen Zhao Liu-An Li +8 位作者 Tao-Tao Que Qiu-Ling Qiu Liang He Zhen-Xing Liu Jin-Wei Zhang Qian-Shu Wu Jia Chen Zhi-Sheng Wu Yang Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第6期419-425,共7页
We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown(TDDB).Under a high forward gate bias stress,newly increased traps generate both at the SiNx/AlGaN int... We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric breakdown(TDDB).Under a high forward gate bias stress,newly increased traps generate both at the SiNx/AlGaN interface and the SiNx bulk,resulting in the voltage shift and the increase of the voltage hysteresis.When prolonging the stress duration,the defects density generated in the SiNx dielectric becomes dominating,which drastically increases the gate leakage current and causes the catastrophic failure.After recovery by UV light illumination,the negative shift in threshold voltage(compared with the fresh one)confirms the accumulation of positive charge at the SiNx/AlGaN interface and/or in SiNx bulk,which is possibly ascribed to the broken bonds after long-term stress.These results experimentally confirm the role of defects in the TDDB of GaN-based MIS-HEMTs. 展开更多
关键词 GaN-based MIS-HEMTs gate dielectric time-dependent dielectric breakdown interface states
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Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes 认领 引用 被引量：1
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作者 马莉 沈光地 +3 位作者 刘建朋 高志远 徐晨 王勋 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期630-633,共4页
In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs... In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance. 展开更多
关键词 GaN-based light emitting diodes series resistance luminous efficacy
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Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm Under Pulse Heat Source 认领 引用 被引量：1
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作者 Qicong Li Xiaoya Tang +1 位作者 Linli Zhu Haihui Ruan 《Acta Mechanica Solida Sinica》 SCIE EI CSCD 2021年第1期27-39,共13页
The thermal properties of a nanostructured semiconductor are affected by multi-physical fields,such as stress and electromagnetic fields,causing changes in temperature and strain distributions.In this work,the influen... The thermal properties of a nanostructured semiconductor are affected by multi-physical fields,such as stress and electromagnetic fields,causing changes in temperature and strain distributions.In this work,the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is investigated.The finite element method is adopted to simulate the temperature distribution in a prestressed nanofilm under heat pulses.Numerical results demonstrate the effect of stress field on the thermal conductivity of GaN-based nanofilm,namely,the prestress and the thermal stress lead to a change in the heat transfer behavior in the nanofilm.Under the same heat source,the peak temperature of the film with stress-dependent thermal conductivity is significantly lower than that of the film with a constant thermal conductivity and the maximum temperature difference can reach 8.2 K.These results could be useful for designing GaN-based semiconductor devices with higher reliability under multi-physical fields. 展开更多
关键词 Multi-physical effect Stress-dependent thermal conductivity Prestress fields Heat transfer behavior GaN-based nanofilm Finite element method
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