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Silicon photonic microring-based eight-channel wavelength-division multiplexing transceiver for high-density optical interconnects 认领 引用 被引量：1
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作者 Shenlei Bao Chao Cheng +6 位作者 Xianglin Bu Houyou Lai Xishan Yu Jianjun Zhou Jintao Xue Wenfu Zhang Binhao Wang 《Advanced Photonics Nexus》 CSCD 2026年第3期82-96,共15页
We demonstrate a fully integrated eight-channel dense wavelength-division multiplexing silicon photonic transceiver supporting 200-Gbps per-channel PAM4 operation,enabling a total chip-to-chip data rate of 1.6 Tbps.Th... We demonstrate a fully integrated eight-channel dense wavelength-division multiplexing silicon photonic transceiver supporting 200-Gbps per-channel PAM4 operation,enabling a total chip-to-chip data rate of 1.6 Tbps.The transmitter employs compact single-bus microring modulators,whereas the receiver adopts a polarization diversity architecture based on cascaded dual-ring filters and integrates a bidirectionally incident photodetector,maintaining stable performance under arbitrary input polarization.A unified multichannel thermo-optic feedback architecture is implemented at both the transmitter and receiver,enabling cooperative link-level wavelength alignment without pre-calibration.This multi-channel parallel control scheme reduces wavelength locking time by~30×while achieving fine wavelength-tracking accuracy of 2.74 pm with negligible thermal overhead.Comprehensive device-and system-level experiments validate the robustness and scalability of the proposed architecture.We uniquely address the critical bottlenecks of high polarization sensitivity and latency in wavelength alignment through a highly integrated silicon photonic architecture.By implementing polarization-splitting grating couplers and synchronized wavelengthlocking schemes,we provide a transformative solution for high-density co-packaged optics.Our approach significantly reduces system footprint,enhances operational reliability,and improves power efficiency,thereby bridging the gap between laboratory demonstrations and practical 1.6-Tbps scale chip-to-chip interconnects. 展开更多
关键词 silicon photonics optical interconnects co-packaged optics optical input/output micro-ring modulators silicongermanium photodiodes wavelength-division multiplexing wavelength stabilization thermal control
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Co-packaged optics:enabling the next generation high-bandwidth and energy-efficient interconnects 认领 引用
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作者 Linjie Zhou Xianshu Luo 《Advanced Photonics Nexus》 CSCD 2026年第3期1-2,共2页
The exponential growth of artificial intelligence(AI),large language models,and hyperscale data centers is rapidly reshaping the requirements for data communication infrastructure.As electrical interconnects approach ... The exponential growth of artificial intelligence(AI),large language models,and hyperscale data centers is rapidly reshaping the requirements for data communication infrastructure.As electrical interconnects approach their fundamental limits in bandwidth density and energy efficiency,co-packaged optics(CPO)has emerged as a compelling paradigm to overcome these bottlenecks.By integrating photonic engines in close proximity to application-specific integrated circuits(ASICs),CPO minimizes electrical link lengths,reduces power consumption,and enables unprecedented bandwidth scaling.At the same time,this tight integration introduces new challenges spanning materials,device design,packaging,thermal management,and system architecture. 展开更多
关键词 high bandwidth electrical interconnects co packaged optics hyperscale data centers overcome bottlenecksby artificial intelligence ai large language modelsand data communication infrastructureas photonic engines
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Toward wafer-level packaged high-speed photodetectors for AI computing interconnects 认领 引用
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作者 Di Liang 《Advanced Photonics Nexus》 CSCD 2026年第3期3-4,共2页
The explosive growth of artificial intelligence(AI)computing,particularly large-scale model training and inference in GPU and accelerator clusters,is driving unprecedented demand for interconnects that deliver high ba... The explosive growth of artificial intelligence(AI)computing,particularly large-scale model training and inference in GPU and accelerator clusters,is driving unprecedented demand for interconnects that deliver high bandwidth,low latency,and strong energy efficiency.As electrical links increasingly run into limits in bandwidth density,power consumption,and signal integrity,optical interconnects have emerged as a key enabling technology for next-generation AI systems.In this context,continued scaling of co-packaged optics and wafer-level photonic integration will require not only high-speed photodetectors,but also manufacturable packaging solutions that can support massive parallel optical input/output(I/O)at lower cost and power. 展开更多
关键词 photonic integration co packaged optics interconnects electrical links model training wafer level packaging gpu accelerator clustersis AI computing
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Atomistic Insights into Aluminium-Boron Nitride Nanolayered Interconnects for High-Performance VLSI Systems 认领 引用
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作者 Mallikarjun P.Y. Rame Gowda D.N. +4 位作者 Trisha J.K. Varshini M. Poornesha S.Shetty Mandar Jatkar Arpan Shah 《Computers, Materials & Continua》 SCIE EI 2026年第3期641-655,共15页
As circuit feature sizes approach the nanoscale,traditional Copper(Cu)interconnects face significant hurdles posed by rising resistance-capacitance(RC)delay,electromigration,and high power dissipation.These limitation... As circuit feature sizes approach the nanoscale,traditional Copper(Cu)interconnects face significant hurdles posed by rising resistance-capacitance(RC)delay,electromigration,and high power dissipation.These limitations impose constraints on the scalability and reliability of future semiconductor technologies.Our paper describes the new Vertical multilayer Aluminium Boron Nitride Nanoribbon(AlBN)interconnect structure,integrated with Density functional theory(DFT)using first-principles calculations.This study explores AlBN-based nanostructures with doping of 1Cu,2Cu,1Fe(Iron),and 2Fe for the application of Very Large Scale Integration(VLSI)interconnects.The AlBN structure utilized the advantages of vertical multilayer interconnects to both reduce the RC delay while enhancing signal integrity.Key parameters like Fermi energy,bandgap,binding energy,conduction channels,quantum resistance,and RC delay were analyzed.Through modeling and large-scale simulation,the structural,electronic,and stability attributes of the AlBN interconnects are analyzed,and the results illustrate considerable improvements in signal propagation against Cu interconnect structures.These findings confirm the tunable,high-performance nature of AlBN-2Fe,making it a promising candidate for future high-speed,low-power VLSI interconnect technologies.We demonstrated an advanced energy-efficient interconnect that can be easily scaled for future nanoscale VLSI circuit design and gives rise to a next generation of viable interconnect technology for high-capacity,high-speed,reliable semiconductor technology. 展开更多
关键词 Dielectric materials AlBN interconnects RC delay reduction nanoscale electronics semiconductor technology signal integrity
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GPS-referenced frequency combs for coherent short-reach optical interconnects based on global-FSON architecture 认领 引用
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作者 Lei Liu Feng Liu +3 位作者 Zhicheng Jin Dayu Shi Youzhen Gui William Shieh 《Advanced Photonics Nexus》 CSCD 2026年第3期118-127,共10页
The advent of artificial intelligence,cloud services,and big data applications has propelled the evolution of next-generation high-capacity datacenters.It is highly anticipated that coherent detection will penetrate f... The advent of artificial intelligence,cloud services,and big data applications has propelled the evolution of next-generation high-capacity datacenters.It is highly anticipated that coherent detection will penetrate further into datacenters in the next decade.However,the large number of tunable lasers in data centers makes the optical module structure complex and adds additional thermal power consumption.Meanwhile,optical frequency combs serve as high-precision frequency resolution and wide spectral coverage lasers,holding tremendous potential for the field of wavelength division multiplexing optical communication.Here,we present an innovative global frequency-synchronous optical network(globalFSON)architecture for coherent short-reach optical interconnects by synchronizing optical frequency combs to a global positioning system disciplined oscillator(GPSDO)and distributing them.The globalFSON architecture can share GPS-referenced optical frequency combs as master lasers among different servers,which eliminates the need for a massive number of tunable lasers in datacenter optical interconnects.On this basis,we achieve a reset-free carrier phase recovery analog coherent receiver in the optical domain and demonstrate dual-polarization coherent signals demultiplexing without coherent silicon applicationspecific integrated circuits.We introduce the global-FSON architecture that provides a laser source with absolute stability for all transponders in datacenter coherent optical interconnects.Its implementation would bolster the potential applicability of coherent optical communication in next-generation datacenter coherent optical interconnects. 展开更多
关键词 global positioning system optical frequency comb datacenter optical interconnect analog signal processing
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DSP-free coherent receivers in frequency-synchronous optical networks for next-generation data center interconnects 认领 引用 被引量：2
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作者 Lei Liu Feng Liu +2 位作者 Cheng Peng Bo Xue William Shieh 《Advanced Photonics Nexus》 CSCD 2025年第3期141-148,共8页
Propelled by the rise of artificial intelligence,cloud services,and data center applications,next-generation,low-power,local-oscillator-less,digital signal processing(DSP)-free,and short-reach coherent optical communi... Propelled by the rise of artificial intelligence,cloud services,and data center applications,next-generation,low-power,local-oscillator-less,digital signal processing(DSP)-free,and short-reach coherent optical communication has evolved into an increasingly prominent area of research in recent years.Here,we demonstrate DSP-free coherent optical transmission by analog signal processing in frequency synchronous optical network(FSON)architecture,which supports polarization multiplexing and higher-order modulation formats.The FSON architecture that allows the numerous laser sources of optical transceivers within a data center can be quasi-synchronized by means of a tree-distributed homology architecture.In conjunction with our proposed pilot-tone assisted Costas loop for an analog coherent receiver,we achieve a record dual-polarization 224-Gb/s 16-QAM 5-km mismatch transmission with reset-free carrier phase recovery in the optical domain.Our proposed DSP-free analog coherent detection system based on the FSON makes it a promising solution for next-generation,low-power,and high-capacity coherent data center interconnects. 展开更多
关键词 digital signal processing-free data center interconnect frequency synchronous optical network analog signal processing
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Vertical assembly of carbon nanotubes for via interconnects 认领 引用 被引量：5
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作者 魏芹芹 魏子钧 +6 位作者 任黎明 赵华波 叶天扬 施祖进 傅云义 张兴 黄如 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第8期6-13,共8页
The via interconnects are key components in ultra-large scale integrated circuits （ULSI）. This paper deals with a new method to create single-walled carbon nanotubes （SWNTs） via interconnects using alternating die... The via interconnects are key components in ultra-large scale integrated circuits （ULSI）. This paper deals with a new method to create single-walled carbon nanotubes （SWNTs） via interconnects using alternating dielectrophoresis （DEP）. Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition. The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%. We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes. 展开更多
关键词 carbon nanotube via interconnects dielectrophoresis electrical properties contact resistance
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A novel analytical thermal model for multilevel nano-scale interconnects considering the via effect 认领 引用 被引量：5
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作者 朱樟明 李儒 +1 位作者 郝报田 杨银堂 《Chinese Physics B》 SCIE EI CAS 2009年第11期4995-5000,共6页
Based on the heat diffusion equation of multilevel interconnects, a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented, which can compute quickly the tempera... Based on the heat diffusion equation of multilevel interconnects, a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented, which can compute quickly the temperature of multilevel interconnects, with substrate temperature given. Based on the proposed model and the 65 nm complementary metal oxide semiconductor （CMOS） process parameter, the temperature of nano-scale interconnects is computed. The computed results show that the via effect has a great effect on local interconnects, but the reduction of thermal conductivity has little effect on local interconnects. With the reduction of thermal conductivity or the increase of current density, however, the temperature of global interconnects rises greatly, which can result in a great deterioration in their performance. The proposed model can be applied to computer aided design （CAD） of very large-scale integrated circuits （VLSIs） in nano-scale technologies. 展开更多
关键词 multilevel interconnects temperature distribution self-heating via effect
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Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects 认领 引用 被引量：3
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作者 李冲 薛春来 +2 位作者 刘智 成步文 王启明 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第3期645-648,共4页
We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30μm-di... We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30μm-diameter silicon on insulator （Ge-on-SOI） PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SO1 substrate by the ultra-high vacuum chemical vapor deposition （UHV-CVD）. The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36/aA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 t.trn is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency. 展开更多
关键词 surface illuminate line array optical telecommunication parallel optical interconnects
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Effects of La0.8Sr_ (0.2)Mn(Fe)O3-δ Protective Coatings on SOFC Metallic Interconnects 认领 引用 被引量：5
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作者 付长璟 孙克宁 周德瑞 《Journal of Rare Earths》 SCIE EI CAS 2006年第3期320-326,共7页
SUS430 （16% - 17% （mass fraction） Cr） can be used as interconnects for solid oxide fuel cells （SOFCs） that operate at lower temperatures （ 〈 800 ℃ ）. However, oxidation of steel can occur readily at elevated... SUS430 （16% - 17% （mass fraction） Cr） can be used as interconnects for solid oxide fuel cells （SOFCs） that operate at lower temperatures （ 〈 800 ℃ ）. However, oxidation of steel can occur readily at elevated temperatures leading to the formation of Cr2O3 and spinel （Fe3O4） and thus greatly degrades the performance of the fuel cell. The aim of this work was to reduce oxide growth, in particular, the Cr2O3 phase, through the application of La0.8Sr0.2MnO3-δ （LSM2O） and La0.8Sr0.2FeO3-δ（LSF20） coatings by atmospheric plasma spraying technology （APS）. Oxide growth was characterized by using X-ray diffraction （XRD）, scanning electron microscopy （SEM） with an energy dispersive X-ray （EDX） analyzer. During oxidation of fifty 20 h cycles at 800 ℃ in air, the samples with coatings remained very stable, whereas significant spallation and weight loss were observed for the uncoated steel. LSF20 presents apparently advantages in reducing oxidation growth, interface resistance and inhibition of diffusion of chromium. After exposure in air at 800 ℃ for 1000 h, the interfacial resistance of LSF20-coated alloy is lowered by more than 23 times to that of LSM20-coated layer. 展开更多
关键词 plasma spraying solid oxide fuel cells metallic interconnects coatings rare earths
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Secure optical interconnects using orbital angular momentum beams multiplexing/multicasting 认领 引用 被引量：6
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作者 Yifan Zhao Jun Liu +8 位作者 Shuhui Li Andong Wang Long Zhu Yan Luo Shi Chen Nan Zhou Shuang Zheng Jing Du Jian Wang 《Advanced Photonics Nexus》 2024年第1期26-35,共10页
Orbital angular momentum(OAM),described by an azimuthal phase term expej lθT,has unbound orthogonal states with different topological charges l.Therefore,with the explosive growth of global communication capacity,esp... Orbital angular momentum(OAM),described by an azimuthal phase term expej lθT,has unbound orthogonal states with different topological charges l.Therefore,with the explosive growth of global communication capacity,especially for short-distance optical interconnects,light-carrying OAM has proved its great potential to improve transmission capacity and spectral efficiency in the space-division multiplexing system due to its orthogonality,security,and compatibility with other techniques.Meanwhile,100-m freespace optical interconnects become an alternative solution for the“last mile”problem and provide interbuilding communication.We experimentally demonstrate a 260-m secure optical interconnect using OAM multiplexing and 16-ary quadrature amplitude modulation(16-QAM)signals.We study the beam wandering,power fluctuation,channel cross talk,bit-error-rate performance,and link security.Additionally,we also investigate the link performance for 1-to-9 multicasting at the range of 260 m.Considering that the power distribution may be affected by atmospheric turbulence,we introduce an offline feedback process to make it flexibly controllable. 展开更多
关键词 orbital angular momentum free-space optical interconnects security space-division multiplexing multicasting
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Texture Analysis of Damascene Copper Interconnects 认领 引用 被引量：2
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作者 王晓冬 吉元 +4 位作者 钟涛兴 李志国 夏洋 刘丹敏 肖卫强 《Journal of Semiconductors》 CAS 北大核心 2008年第6期1136-1140,共5页
Texture and grain boundary character distribution of Cu interconnects with different line width for as-deposited and annealed conditions were measured by EBSD. All specimens appear mixed texture and （111） texture is... Texture and grain boundary character distribution of Cu interconnects with different line width for as-deposited and annealed conditions were measured by EBSD. All specimens appear mixed texture and （111） texture is the dominate component.As-deposited interconnects undergo the phenomenon of self-annealing at RT,in which some abnormally large grains are found. Lower aspect ratio of lines and anneal treatment procured larger grains and stronger （111） texture. Meanwhile, the intensity proportion of other textures with lower strain energy to （111） texture is decreased. As-deposited specimens reveal （111）（112？ and （111） （231） components, （111） （110） component appeared and （111） （112？ and （111） （231） components were developed during the annealing process. High angle boundaries are dominant in all specimens, boundaries with a misorientation of 55°-60° and ∑3 ones in higher proportion, followed by lower boundaries with a misorientation of 35°-40° and 29 boundaries. As the aspect ratio of lines and anneal treatment increase,there is a gradual in- crement in ∑3 boundaries and a decrease in ∑9 boundaries. 展开更多
关键词 Cu interconnects texture misorientation coincident site lattice boundaries EBSD
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Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects 认领 引用 被引量：2
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作者 赵斌 赵明涛 +1 位作者 张艳飞 杨俊和 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期435-439,共5页
The deposition of a Cu seed layer film is investigated by supercritical fluid deposition （SCFD） using H2 as a reducing agent for Bis（2,2,6,6-tetramethyl-3,5- heptanedionato） copper in supercritical CO2 （scCO2）. ... The deposition of a Cu seed layer film is investigated by supercritical fluid deposition （SCFD） using H2 as a reducing agent for Bis（2,2,6,6-tetramethyl-3,5- heptanedionato） copper in supercritical CO2 （scCO2）. The effects of deposition temperature, precursor, and H2 concentration are investigated to optimize Cu deposition. Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2. A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films. For a H2 concentration above 0.56 mol/L, the root-mean-square （RMS） roughness of a Cu film decreases as the H2 concentration increases. Finally, a 20-nm thick Cu film with a smooth surface, which is required as a seed layer in advanced interconnects, is successfully deposited at a high H2 concentration （0.75 tool/L）. 展开更多
关键词 supercritical CO2 CU film seed layer Cu interconnects
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Review: Perspectives on the metallic interconnects for solid oxide fuel cells 认领 引用 被引量：3
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作者 ZHUWei-zhong YANMi 《Journal of Zhejiang University Science》 2004年第12期1471-1503,共33页
The various stages and progress in the development of interconnect materials for solid oxide fuel cells (SOFCs )over the last two decades are reviewed. The criteria for the application of materials as interconnects ar... The various stages and progress in the development of interconnect materials for solid oxide fuel cells (SOFCs )over the last two decades are reviewed. The criteria for the application of materials as interconnects are highlighted. Interconnects based on lanthanum chromite ceramics demonstrate many inherent drawbacks and therefore are only useful for SOFCs operating around 1000℃. The advance in the research of anode-supported flat SOFCs facilitates the replacement of ceramic interconnects with metallic ones due to their significantly lowered working temperature. Besides, interconnects made of metals or alloys offer many advantages as compared to their ceramic counterpart. The oxidation response and thermal expansion behaviors of various prospective metallic interconnects are examined and evaluated. The minimization of contact resistance to achieve desired and reliable stack performance during their projected lifetime still remains a highly challenging issue with metallic interconnects. Inexpensive coating materials and techniques may play a key role in promoting the commercialization of SOFC stack whose interconnects are constructed of some current commercially available alloys. Alternatively, development of new metallic materials that are capable of forming stable oxide scales with sluggish growth rate and sufficient electrical conductivity is called for. 展开更多
关键词 Solid oxide fuel cells (SOFCs) Interconnects Metallic materials
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Characterization of the arrangement feature of copper interconnects by Moir inversion method 认领 引用
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作者 Qinghua Wang Satoshi Kishimoto +2 位作者 Huimin Xie Kewei Xu Jianfeng Wang 《Theoretical & Applied Mechanics Letters》 CAS 2012年第2期37-40,共4页
This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam （FIB） Moire inversion method quantitatively. The curved FIB Moire pattern... This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam （FIB） Moire inversion method quantitatively. The curved FIB Moire patterns indicate that the copper interconnects are a series of curves with continuous variations instead of beelines. The control equation set of the copper interconnects central lines is attained through the Moire inversion method. This work can be extended to inspect the structural defects and provide a reliable support for the interconnects structure fabrication. 展开更多
关键词 copper interconnects arrangement Moire inversion method focused ion-beam
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Analysis of on-chip distributed interconnects based on Pade expansion 认领 引用
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作者 Xiaopeng JI Long GE Zhiquan WANG 《控制理论与应用（英文版）》 2009年第1期92-96,共5页
In this paper, on-chip interconnects are modeled as distributed parameter RLCG transmission lines, based on which the matrix ABCD of interconnects is deduced. With help of the ABCD matrix, a voltage transfer function ... In this paper, on-chip interconnects are modeled as distributed parameter RLCG transmission lines, based on which the matrix ABCD of interconnects is deduced. With help of the ABCD matrix, a voltage transfer function of an interconnect system, consisting of a driver, interconnect line and load, is obtained analytically in the form of a transcendental function, and it is reduced to a finite order system based on high order Pade approximation. With the reduced-order transfer function, response waveforms with step input can be obtained, and signal delay can be calculated consequently. Two numerical experiments are conducted to demonstrate its efficiency. 展开更多
关键词 Distributed interconnects ABCD matrix Transfer function Pade expansion Response waveform Signal delay
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Electric Current-induced Failure of 200-nm-thick Gold Interconnects 认领 引用 被引量：1
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作者 Bin ZHANG Qingyuan YU +1 位作者 Jun TAN Guangping ZHANG 《Journal of Materials Science & Technology》 SCIE EI CAS 2008年第6期895-898,共4页
200-nm-thick Au interconnects on a quartz substrate were tested in-situ inside a dual-beam microscope by applying direct current, alternating current and alternating current with a small direct current component. The ... 200-nm-thick Au interconnects on a quartz substrate were tested in-situ inside a dual-beam microscope by applying direct current, alternating current and alternating current with a small direct current component. The failure behavior of the Au interconnects under three kinds of electric currents were characterized in-situ by scanning electron microscopy. It is found that the formation of voids and subsequent growth perpendicular to the interconnect direction is the fatal failure mode for all the Au interconnects under three kinds of electric currents. The failure mechanism of the ultrathin metal lines induced by the electric currents was analyzed. 展开更多
关键词 Au interconnect Electric current Thermal fatigue Failure
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Current sustainability and electromigration of Pd,Sc and Y thin-films as potential interconnects 认领 引用
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作者 Yong Yang Shengyong Xu +1 位作者 Sishen Xie Lian-Mao Peng 《Nano-Micro Letters》 SCIE EI CAS 2010年第3期184-189,共6页
The progress on novel interconnects for carbon nanotube(CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors.The Cu interconnect material used in current integrated... The progress on novel interconnects for carbon nanotube(CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors.The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects,as it requires electrochemical deposition followed by chemical-mechanical polishing.We report our experimental results on the failure current density,resistivity,electromigration effect and failure mechanism of patterned stripes of Pd,Sc and Y thin-films,regarding them as the potential novel interconnects.The Pd stripes have a failure current density of(8~10)×106 A/cm^2(MA/cm^2),and they are stable when the working current density is as much as 90% of the failure current density.However,they show a resistivity around 210 μΩ·cm,which is 20 times of the bulk value and leaving room for improvement.Compared to Pd,the Sc stripes have a similar resistivity but smaller failure current density of 4~5 MA/cm^2.Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of oxidation.For comparison,Au stripes of the same dimensions show a failure current density of 30 MA/cm^2 and a resistivity around 4 μΩ·cm,making them also a good material as novel interconnects. 展开更多
关键词 Carbon nanotube-based field effect transistors Carbon nanotube-based circuit Interconnects Current density Electromigration Resistivity
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Progress and Research on Interconnects Crosstalk in Deep Submicron Technology 认领 引用 被引量：2
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作者 蔡懿慈 赵鑫 洪先龙 《Journal of Semiconductors》 CAS 北大核心 2003年第11期1121-1129,共9页
As develops in deep sub micron designs,the interconnect crosstalk becomes much more serious.Espe cially, the coupling inductance can not be ignored in gigahertz designs.So shield insertion is an efficient technique to... As develops in deep sub micron designs,the interconnect crosstalk becomes much more serious.Espe cially, the coupling inductance can not be ignored in gigahertz designs.So shield insertion is an efficient technique to reduce the inductive noise.In this paper,the characteristics of on chip mutual inductance (as well as self) for coplanar,micro stripline and stripline structures are introduced first.Then base on the coplanar interconnect structures,the effective coupling K eff model and the RLC explicit noise model are proposed respectively.The results of experiments show that these two models both have high fidelity. 展开更多
关键词 interconnect crosstalk crosstalk noise K eff model RLC explicit noise model
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Real-time 850 nm multimode VCSEL to 1 550 nm single mode VCSEL data routing for optical interconnects 认领 引用
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作者 G.M.Isoe A.W.R.Leitch T.B.Gibbon 《Optoelectronics Letters》 EI 2019年第4期297-301,共5页
Short-reach optical interconnects among massive serves in data centers have attracted extensive research recently. Increasing capacity, cost and power efficiency as well as wavelength switching between data center net... Short-reach optical interconnects among massive serves in data centers have attracted extensive research recently. Increasing capacity, cost and power efficiency as well as wavelength switching between data center network nodes are still key challenges for current optical interconnects. In this work, we experimentally demonstrate the real-time intermode optical wavelength switching technique, for high-speed wavelength flexible data center interconnects. A10 Gbit/s 1 550 nm single mode vertical cavity surface emitting laser(VCSEL) is optically injected and used to control a 10 Gbit/s multimode VCSEL carrier at 850 nm. Results show that a clearly open eye diagram is achieved at back-to-back analysis, implying a successful wavelength switch and error-free operation at 10 Gbit/s. A fully optical wavelength conversion of a multimode VCSEL operation at 850 nm using a single mode VCSEL subject to external optical injection at 1 550 nm is reported. This work opens new perspectives towards the development of a cost effective high-speed real-time inter-band wavelength switching technique between servers and network devices operating at different transmission windows at network nodes, for current and future optical interconnects. 展开更多
关键词 VCSEL optical interconnects data centers
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