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Promoting hole mobility in carbon-based perovskite solar cells by p-type doping of P3HT to lower its hole reorganization energy 认领 引用
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作者 Wen-Wu Liu Shi-Ji Da +1 位作者 Mei-lin Li Cai-Xia Li 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2026年第6期550-559,I0014,共10页
Carbon-based perovskite solar cells(C-PSCs)have attracted much attention due to their simple preparation technique,low price,and good hydrophobicity.Among them,the hole transport layer(HTL)plays a crucial role.It acts... Carbon-based perovskite solar cells(C-PSCs)have attracted much attention due to their simple preparation technique,low price,and good hydrophobicity.Among them,the hole transport layer(HTL)plays a crucial role.It acts as a bridge,responsible for efficiently collecting and transporting photogenerated holes while blocking electrons and reducing charge complexation.However,the direct contact of the alkyl side chain of P3 HT with the perovskite film will reduce the electronic contact between perovskite and P3 HT,the hole transport efficiency becomes low,and the passivation contact is slightly insufficient,which will exacerbate the non-radiative compounding of PSCs.In this work,N,N-dimethylphenylammonium tetra(pentafluorophenyl)borate(DMA-TPFB)is used as a p-type dopant to modify P3 HT and decrease the reorganization energy of exciton dissociation(λED),charge diffusion transfer(λCDT),and nonradiative charge recombination(λCR),leading to a lowered hole reorganization energyλ(h).The strong electronwithdrawing property of DMA-TPFB also makes the P3 HT energy level changes,leading to a better energy level matching of the film,reducing the interfacial charge complex,and improving the device open-circuit voltage.In addition,the pentafluorophenyl in DMA-TPFB has high hydrophobicity,and after doping,a dense fluorinated layer can be formed on the surface of the P3 HT film,which further enhances the moisture-proof performance of the material and synergistically improves the wet thermal stability of the device.The results showed that the DMA-TPFB doped device achieved a photoelectric conversion efficiency(PCE)of 18.78%,which was significantly higher than that of the control device of 15.87%.The unencapsulated target device retained 75%of its initial efficiency after aging in air at room temperature and40–60%relative humidity for 720 h. 展开更多
关键词 Carbon-based MAPbI3 p-Type doping Hole reorganization energy Hole mobility
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Improving electrical performance and fringe effect in p-type SnOxthin film transistors via Ta incorporation 认领 引用
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作者 Yu Song Runtong Guo +6 位作者 Ruohao Hong Rui He Xuming Zou Benjamin Iñiguez Denis Flandre Lei Liao Guoli Li 《Journal of Semiconductors》 EI CAS CSCD 2025年第9期78-85,共8页
In this work,the incorporation of tantalum(Ta)into p-type metal-oxide(SnOx)semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors(TFTs).... In this work,the incorporation of tantalum(Ta)into p-type metal-oxide(SnOx)semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors(TFTs).The Ta-doped SnOx(SnOx:Ta)film is deposited by radio-frequency(RF)magnetron sputtering with a Sn:Ta(3 at.%)target and thermally annealed at 270℃ for 30 min.Here,we observe that the SnOx:Ta film presents increased crystallinity,reduced defect density(3.25×1012cm−2·eV−1),and widened bandgap(1.98 eV),in comparison with the undoped SnOxfilm.As a result,the SnOx:Ta TFTs exhibit a lower off-state current(Ioff),an improved on/off current ratio(2.17×104),a remarkably decreased subthreshold swing(SS)by 41%,and enhanced device stability.Additionally,by introducing Ta dopants,the fringe effect as well as the impact of channel width-to-length ratio(W/L)on electrical performances of the p-type oxide TFTs can be effectively suppressed.These results shall contribute to further exploration and development of p-type SnOxTFTs. 展开更多
关键词 tin monoxide p-type thin film transistors Ta doping fringe effect on/off current ratio
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Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells 认领 引用 被引量：2
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作者 Napasuda Wichaiyo Yuyao Wei +9 位作者 Chao Ding Guozheng Shi Witoon Yindeesuk Liang Wang Huān Bì Jiaqi Liu Shuzi Hayase Yusheng Li Yongge Yang Qing Shen 《Journal of Semiconductors》 EI CAS CSCD 2025年第4期63-70,共8页
Traditional p-type colloidal quantum dot(CQD)hole transport layers(HTLs)used in CQD solar cells(CQDSCs)are commonly based on organic ligands exchange and the layer-by-layer(LbL)technique.Nonetheless,the ligand detachm... Traditional p-type colloidal quantum dot(CQD)hole transport layers(HTLs)used in CQD solar cells(CQDSCs)are commonly based on organic ligands exchange and the layer-by-layer(LbL)technique.Nonetheless,the ligand detachment and complex fabrication process introduce surface defects,compromising device stability and efficiency.In this work,we propose a solution-phase ligand exchange(SPLE)method utilizing inorganic ligands to develop stable p-type lead sulfide(PbS)CQD inks for the first time.Various amounts of tin(Ⅱ)iodide(SnI2)were mixed with lead halide(PbX2;X=I,Br)in the ligand solution.By precisely controlling the SnI2concentration,we regulate the transition of PbS QDs from n-type to p-type.PbS CQDSCs were fabricated using two different HTL approaches:one with 1,2-ethanedithiol(EDT)-passivated QDs via the LbL method(control)and another with inorganic ligand-passivated QD ink(target).The target devices achieved a higher power conversion efficiency(PCE)of 10.93%,compared to 9.83%for the control devices.This improvement is attributed to reduced interfacial defects and enhanced carrier mobility.The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands,paving the way for high-performance and flexible CQD-based optoelectronic devices. 展开更多
关键词 quantum dot solar cells hole transport layer PbS p-type ink inorganic ligands
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Enhanced thermoelectric performance in p-type AgBiSe2 through carrier concentration optimization and valence band modification 认领 引用
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作者 Hao-Ming Liu Xiu-Qun Wu +4 位作者 Jia-Yan Sun Shan Li Jun-Xiong Zhang Xin-Li Ye Qian Zhang 《Rare Metals》 SCIE EI CAS CSCD 2025年第2期1213-1221,共9页
Realizing the high thermoelectric performance of p-type AgBiSe2-based materials has been challenging due to their low p-type dopability.This work demonstrated that Cd doping at the Bi site converts n-type AgBiSe_(2... Realizing the high thermoelectric performance of p-type AgBiSe2-based materials has been challenging due to their low p-type dopability.This work demonstrated that Cd doping at the Bi site converts n-type AgBiSe2 to p-type.The hole concentration is effectively increased with increasing Cd doping content,thereby enhancing the electrical conductivity.Theoretical calculations reveal that Cd doping flattens the edge of the valence band,resulting in an increase in the density-of-states effective mass and Seebeck coefficient.A record-high power factor of~6.2µW·cm−1·K−2 was achieved at room temperature.Furthermore,the induced dislocations enhance the phonon scattering,contributing to the ultralow lattice thermal conductivity across the entire temperature range.As a result,a decent figure of merit(zT)of~0.3 at room temperature and a peak zT of~0.5 at 443 K were obtained in AgBi0.92Cd0.08Se2.Our work provides a feasible method for optimizing the thermoelectric performance of p-type AgBiSe2. 展开更多
关键词 Thermoelectric AgBiSe2 P-type Cd doping
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Realizing high thermoelectric properties in p-type polycrystalline SnSe by inducing DOS distortion 认领 引用 被引量：12
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作者 Yu-Ping Wang Bing-Chao Qin +3 位作者 Dong-Yang Wang Tao Hong Xiang Gao Li-Dong Zhao 《Rare Metals》 SCIE EI CAS CSCD 2021年第10期2819-2828,共10页
SnSe crystals have been discovered as one of the most efficient thermoelectric materials due to their remarkable thermal and electrical transports. But the polycrystalline SnSe possesses much lower performance especia... SnSe crystals have been discovered as one of the most efficient thermoelectric materials due to their remarkable thermal and electrical transports. But the polycrystalline SnSe possesses much lower performance especially for the low carrier mobility and electrical conductivity. We firstly attempted to explain and verify the difference in the electrical conductivity as a function of temperature between p-type crystalline and polycrystalline SnSe by considering the grain boundary effects in the polycrystalline samples. On the basis of 2% Na doping to optimize the carrier concentration, the carrier mobility is improved by further introducing In, leading to enhanced carrier mobility from 3 to 9 cm2·V-1·s-1 in polycrystalline SnSe. Moreover, In doping introduces extra resonant levels in SnSe, which increases the density of states near Fermi level and leads to an enhanced band effective mass. Large Seebeck coefficient of ~205 l V·K-1 at 300 K and maximum power factor of ~7.5 l W·cm-1·K-2 at 773 K can be obtained in the Sn0.975Na0.02In0.005 Se sample,leading to a competitively high dimensionless figure of merit(ZT) value exceeding 1.1 at 773 K. 展开更多
关键词 Thermoelectric p-type polycrystalline SnSe Carrier mobility Resonant effect Band effective mass
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Recent progress of the native defects and p-type doping of zinc oxide 认领 引用 被引量：4
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作者 汤琨 顾书林 +3 位作者 叶建东 朱顺明 张荣 郑有炓 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第4期27-49,共23页
Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the shor... Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent（2011-now） research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area. 展开更多
关键词 zinc oxide native defects p-type doping acceptor
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Enhanced thermoelectric performance in p-type Mg3Sb2 via lithium doping 认领 引用 被引量：8
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作者 Hao Wang Jin Chen +4 位作者 Tianqi Lu Kunjie Zhu Shan Li Jun Liu Huaizhou Zhao 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第4期110-116,共7页
The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,... The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,the intrinsically p-type Mg3Sb2 shows low figure of merit（z T = 0.23 at 723 K） for its poor electrical conductivity.In this study,a series of Mg（3-x）LixSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering（SPS） process.Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample,which can be essentially attributed to the increased carrier concentration,leading to a maximum z T of0.59 at 723 K with the optimum doping level x = 0.01.Additionally,the engineering z T and energy conversion efficiency are calculated to be 0.235 and 4.89%,respectively.To our best knowledge,those are the highest values of all reported p-type Mg3Sb2-based compounds with single element doping. 展开更多
关键词 p-type Mg3Sb2 Zintl compounds lithium doping carrier concentration enhanced thermoelectric properties
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A Novel Sr_2CuInO_3S p-type semiconductor photocatalyst for hydrogen production under visible light irradiation 认领 引用 被引量：3
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作者 Yushuai Jia Jingxiu Yang +2 位作者 Dan Zhao Hongxian Han Can Li 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2014年第4期420-426,共7页
A novel Sr2CulnO3S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type sem... A novel Sr2CulnO3S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type semiconductor character of the synthesized Sr2CuInO3 S was confirmed by Hall efficient measurement and Mott-Schottky plot analysis. First-principles density functional theory calculations （DFT） and electrochem ical measurements were performed to elucidate the electronic structure and the energy band locations. It was found that the as-synthesized Sr2CuInO3S photocatalyst has appreciate conduction and valence band positions for hydrogen and oxygen evolution, respectively. Photocat alytic hydrogen production experiments under a visible light irradiation （A〉420 nm） were carried out by loading different metal and metal-like cocatalysts on Sr2CuInO3S and Rh was found to be the best one among the tested ones. 展开更多
关键词 hydrogen production photocatalyst p-type semiconductor Sr2CuIn03S oxysulfide visible light cocatalyst
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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 认领 引用 被引量：5
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作者 杨静 赵德刚 +12 位作者 江德生 刘宗顺 陈平 李亮 吴亮亮 乐伶聪 李晓静 何晓光 王辉 朱建军 张书明 张宝顺 杨辉 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第6期629-634,共6页
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well （MQW） solar cells are investigated. It is found that due to the reduction of piezoelectric polarization ... Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well （MQW） solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency （EQE） of the solar cells increases in a low energy spectral range （λ 〉 370 nm） when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths （λ 〉 370 nm）. 展开更多
关键词 nitride materials external quantum efficiency polarization p-type GaN resistivity
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Development in p-type Doping of ZnO 认领 引用 被引量：3
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作者 俞丽萍 朱其锵 +1 位作者 FAN Dayong IANZili 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2012年第6期1184-1187,共4页
Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite ... Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented. 展开更多
关键词 ZnO p-type doping fabrication method optoelectronics applicatio
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Identification of anomalous fast bulk events in a p-type point-contact germanium detector 认领 引用 被引量：6
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作者 Ren-Ming-Jie Li Shu-Kui Liu +13 位作者 Shin-Ted Lin Li-Tao Yang Qian Yue Chang-Hao Fang Hai-Tao Jia Xi Jiang Qian-Yun Li Yu Liu Yu-Lu Yan Kang-Kang Zhao Lei Zhang Chang-Jian Tang Hao-Yang Xing Jing-Jun Zhu 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2022年第5期53-67,共15页
The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct... The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct dark matter interactions,coherent elastic neutrino-nucleus scattering,and neutrinoless double beta decay.Anomalous bulk events with an extremely fast rise time are observed in the CDEX-1B detector.We report a method of extracting fast bulk events from bulk events using a pulse shape simulation and reconstructed source experiment signature.Calibration data and the distribution of X-rays generated by intrinsic radioactivity verified that the fast bulk experienced a single hit near the passivation layer.The performance of this germanium detector indicates that it is capable of single-hit bulk spatial resolution and thus provides a background removal technique. 展开更多
关键词 p-type point-contact germanium detector Dark matter Pulse shape analysis Anomalous fast bulk events
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Hierarchical NiCo2O4 microspheres assembled by nanorods with p-type response for detection of triethylamine 认领 引用 被引量：3
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作者 Chen Yang Yongshan Xu +4 位作者 Lingli Zheng Yingqiang Zhao Wei Zheng Xianghong Liu Jun Zhang 《Chinese Chemical Letters》 SCIE CAS CSCD 2020年第8期2077-2082,共6页
The morphological and structural design provides an efficient protocol to optimize the performance of gas sensing materials.In this work,a gas sensor with high sensitivity for triethylamine(TEA)detection is developed ... The morphological and structural design provides an efficient protocol to optimize the performance of gas sensing materials.In this work,a gas sensor with high sensitivity for triethylamine(TEA)detection is developed based on p-type NiCo2 O4 hierarchical microspheres.The NiCo2 O4 microspheres,synthesized by a hydrothermal route,have a three-dimensional(3 D)urchin-like structure assembled by nanorod building blocks.The structure-property correlation has been investigated by powder X-ray diffraction,X-ray photoelectron spectroscopy,transmission electron microscope,scanning electron microscope,N2 adsorption-desorption tests and comprehensive gas sensing experiments.The influence of calcination temperature on the morphological structure and sensing performances has been investigated.Results reveal that the material annealed at 300℃has a very large specific surface area of 125.27 m2/g,thereby demonstrating the best TEA sensing properties including high response and low limit of detection(145 ppb),good selectivity and stability.The further increase of the calcination temperature leads to the collapse of the 3 D hierarchical structure with significantly decreased surface area,which is found to decline the sensing performances.This work indicates the promise of ternary p-type metal oxide nanostructures for application in highly sensitive gas sensors. 展开更多
关键词 Microstructures NiCo2O4 Metal oxide p-type response Gas sensor
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Realizing Cd and Ag codoping in p-type Mg3Sb2toward high thermoelectric performance 认领 引用 被引量：5
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作者 Shijuan Xiao Kunling Peng +6 位作者 Zizhen Zhou Huan Wang Sikang Zheng Xu Lu Guang Han Guoyu Wang Xiaoyuan Zhou 《Journal of Magnesium and Alloys》 SCIE EI CAS CSCD 2023年第7期2486-2494,共9页
Mg3Sb2has attracted intensive attention as a typical Zintl-type thermoelectric material.Despite the exceptional thermoelectric performance in n-type Mg3Sb2,the dimensionless figure of merit(zT)of p-type Mg... Mg3Sb2has attracted intensive attention as a typical Zintl-type thermoelectric material.Despite the exceptional thermoelectric performance in n-type Mg3Sb2,the dimensionless figure of merit(zT)of p-type Mg3Sb2remains lower than 1,which is mainly attributed to its inferior electrical properties.Herein,we synergistically optimize the thermoelectric properties of p-type Mg3Sb2materials via codoping of Cd and Ag,which were synthesized by high-energy ball milling combined with hot pressing.It is found that Cd doping not only increases the carrier mobility of p-type Mg3Sb2,but also diminishes its thermal conductivity(κtot),with Mg2.85Cd0.5Sb2achieving a lowκtot value of∼0.67 W m−1K−1at room temperature.Further Ag doping elevates the carrier concentration,so that the power factor is optimized over the entire temperature range.Eventually,a peak zT of∼0.75 at 773 K and an excellent average zT of∼0.41 over 300−773 K are obtained in Mg2.82Ag0.03Cd0.5Sb2,which are∼240%and∼490%higher than those of pristine Mg3.4Sb2,respectively.This study provides an effective pathway to synergistically improve the thermoelectric performance of p-type Mg3Sb2by codoping Cd and Ag,which is beneficial to the future applications of Mg3Sb2-based thermoelectric materials. 展开更多
关键词 Thermoelectric p-type Mg3Sb2 Cd and Ag codoping Lattice thermal conductivity Carrier concentration
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The low temperature growth of stable p-type ZnO films in HiPIMS 认领 引用 被引量：3
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作者 Qian LI Minju YING +2 位作者 Zhongwei LIU Lizhen YANG Qiang CHEN 《Plasma Science and Technology》 SCIE EI CAS CSCD 2021年第9期154-162,共9页
In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration ... In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×1018cm-3is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO. 展开更多
关键词 HiPIMS Al-N co-doped ZnO film substrate temperature p-type conduction N+/N2+
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A study of transition from n-to p-type based on hexagonal WO3 nanorods sensor 认领 引用 被引量：6
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作者 武雅乔 胡明 韦晓莹 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第4期208-214,共7页
Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods ar... Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods. 展开更多
关键词 hexagonal W03 nanorods sensor hydrothermal method n- to p-type transition
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Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface 认领 引用 被引量：2
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作者 韩超 张玉明 +4 位作者 宋庆文 汤晓燕 张义门 郭辉 王悦湖 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第11期452-459,共8页
This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on ... This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the AI：Ti composition with no more than 50 at.% Al. The specific contact resistance （SCR） is obtained to be as low as 2.6 × 10-6Ωcm2 for the bilayered Ti（100 nm）/Al（100 nm） contact treated with 3 rain rapid thermal annealing （RTA） at 1000 ℃. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3 SiC2 layer with （0001）-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing. 展开更多
关键词 4H-SiC p-type ohmic contact alloying step bunching
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Preparation and Photovoltaic Properties of p-Type Nano-ZnFe_2O_4 认领 引用 被引量：2
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作者 LI Zi-heng ZOU Xu +1 位作者 LI Gen ZOU Guang-tian 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2012年第4期712-715,共4页
p-Type nano-ZnFe2O4 semiconductors were gained by high-prssure treatment.Surface photovoltaic spectrum（SPS） and transient photovoltaic technology（TPV） were used for studying the photogenerated charge of nano-ZnFe2... p-Type nano-ZnFe2O4 semiconductors were gained by high-prssure treatment.Surface photovoltaic spectrum（SPS） and transient photovoltaic technology（TPV） were used for studying the photogenerated charge of nano-ZnFe2O4.Results show that the photovoltaic behavior of nano-ZnFe2O4 changed as the processing pressure increased.When the processing pressure was higher than 2 GPa,both SPS response interval and peak changed significantly.XPS results show that the non-lattice oxygen entered into the lattice and the content of lattice oxygen increased with the increase of processing pressure.The material changed from oxygen vacancy type to oxygen excess type and the photoelectric properties changed from n-type to p-type when the processing pressure is higher than 2 GPa. 展开更多
关键词 High-pressure treatment p-Type nano-ZnFe2O4 Photovoltaic behavior
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棉花P-type ATPases基因的克隆及表达分析 认领 引用 被引量：2
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作者 陈菲 杨郁文 +5 位作者 何冰 陈天子 袁洪波 连梓伊 张保龙 刘蔼民 《江苏农业学报》 CSCD 北大核心 2011年第6期1192-1197,共6页
为了探明棉花P-type ATPases基因在植物不同组织和多种逆境条件下的表达情况,利用棉花黄萎病菌的P-type ATPases蛋白序列,在GenBank中搜索棉花EST序列,得到2个同源的棉花EST片段,结合RACE和Genome walking获得了这个基因的完整读码框序... 为了探明棉花P-type ATPases基因在植物不同组织和多种逆境条件下的表达情况,利用棉花黄萎病菌的P-type ATPases蛋白序列,在GenBank中搜索棉花EST序列,得到2个同源的棉花EST片段,结合RACE和Genome walking获得了这个基因的完整读码框序列,其开放阅读框长度为3 570 bp,编码1 190个氨基酸,与毛果杨、蓖麻的同源性达86%左右,将其命名为Gbpatp。洋葱表皮亚细胞定位观察结果显示,Gbpatp编码的蛋白分布在细胞膜上。RT-PCR技术检测组织表达特异性分析表明,P-type ATPases在茎和棉絮中的表达量较高,在种子中低水平表达,在叶片和花蕾中表达量极低,说明Gbpatp可能与棉花较成熟的器官茎、棉絮和种子的生长发育密切相关。在逆境胁迫中发现,干旱处理后Gbpatp的表达强烈,并且随处理时间延长表达量逐渐增加;重金属Cu2+处理24 h后Gbpatp表达量升高,但48 h急剧下降;Gbpatp在低温处理下也有轻微表达。激素诱导后发现,Gbpatp对赤霉素和脱落酸均有响应,随胁迫时间延长其表达量仍能维持在一定水平。 展开更多
关键词 棉花 P-type ATPases基因 基因表达 克隆
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Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers 认领 引用 被引量：2
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作者 罗俊 赵胜雷 +3 位作者 林志宇 张进成 马晓华 郝跃 《Chinese Physics Letters》 SCIE EI CAS CSCD 2016年第6期121-124,共4页
A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long ... A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long p-type GaN layers which are buried in the GaN buffer layer under the source side. Under the condition of high-voltage blocking state, two reverse p-n junctions introduced by the buried p-type layers will effectively modulate the surface and bulk electric fields. Meanwhile, the buffer leakage is well suppressed in this structure and both lead to a high breakdown voltage. The simulations show that the breakdown voltage of the DBPL structure can reach above 2000 V from 467 V of the conventional structure with the same gate-drain length of 8μm. 展开更多
关键词 AlGaN on is Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers HEMT of in
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Inorganic p-type semiconductors and carbon materials based hole transport materials for perovskite solar cells 认领 引用 被引量：1
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作者 Yang Yang Ngoc Duy Pham +3 位作者 Disheng Yao Huaiyong Zhu Prasad Yarlagadda Hongxia Wang 《Chinese Chemical Letters》 SCIE CAS CSCD 2018年第8期1242-1250,共9页
Organic-inorganic lead halide based perovskite solar cells（PSCs） have presented a promising prospective in photovoltaic field with current record power conversion efficiency of 22.7%, which is comparable to commerci... Organic-inorganic lead halide based perovskite solar cells（PSCs） have presented a promising prospective in photovoltaic field with current record power conversion efficiency of 22.7%, which is comparable to commercial crystalline silicon cells and even higher than traditional thin film solar cells of CIGS. However,the pressure to enhance device stability under operational condition has driven researches towards development of stable hole transport materials（HTMs） for PSCs. Compared to traditional expensive organic HTMs such as spiro-OMeTAD, there is no doubt that inorganic p-type semiconductors and carbon materials are attractive alternatives that not only possess better stability but also are much cheaper. This review summarized the most recent progress of inorganic hole-transporting materials and carbon materials that have been developed for PSCs. The most recent advancement of device performance using these HTMs was demonstrated. In addition, the research of using various types of carbon materials as additives in HTMs to enhance device performance and stability or as electrical contact in HTM-free PSC was also demonstrated. The effectiveness of each type of materials on mitigating ion migration and degradation of PSC induced by humidity, illumination light intensity and high temperature is discussed.This timely review sheds light on the approaches to tackle the stability issue of PSCs to push the technology towards commercialization through material engineering of HTM. 展开更多
关键词 Perovskite Hole transport materials Inorganic p-type semiconductors Carbon materials Stability
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