Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor(VDMOS) devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor(VDMOS) devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied...[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and (111) mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 (0.6 nm)/FePt (3 nm)]5/Ag (50 nm) films and highly (001)-oriented films can be obtained in the [SiO2 (2 nm)/FePt (3 nm)]5/Ag (50 nm) films.展开更多
After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data...After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data retention ability(189°C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO_2(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO_2(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m·K).展开更多
Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications. Au/SiO2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma s...Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications. Au/SiO2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma sputtering. Au particles as perfect spheres with diameters between 10 nm and 30 nm are uniformly dispersed in the SiO2 matrix. Optical absorption peaks due to the surface plasmon resonance of Au particles are observed. The absorption property is enhanced with the increase of Au content, showing a maximum value in the films with 37 vol% Au. The absorption curves of the Au/SiO2 thin films with 3 vol% to 37 vol% Au accord well with the theoretical optical absorption spectra obtained from Mie resonance theory. Increasing Au content over 37 vol% results in the partial connection of Au particles, whereby the intensity of the absorption peak is weakened and ultimately replaced by the optical absorption of the bulk. The band gap decreases with Au content increasing from 3 vol% to 37 vol % but increases as Au content further increases.展开更多
Copper (Cu)-doped ZrO2 (CZO) films with different Cu content (0 at.%- 8.07 at.%) are successfully deposited on Si (100) substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. T...Copper (Cu)-doped ZrO2 (CZO) films with different Cu content (0 at.%- 8.07 at.%) are successfully deposited on Si (100) substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. The influences of Cu content on structural, morphological, optical and electrical properties of CZO films are discussed in detail. The CZO films exhibit ZrO2 monocline (1^-11) preferred orientation, which indicates that Cu atoms are doped in ZrO2 host lattice. The crystallite size estimated form x-ray diffraction (XRD) increases by Cu doping, which accords with the result observed from the scanning electron microscope (SEM). The electrical resistivity decreases from 2.63 Ω·cm to 1.48 Ω·cm with Cu doping content increasing, which indicates that the conductivity of CZO film is improved. However, the visible light transmittances decrease slightly by Cu doping and the optical band gap values decrease from 4.64 eV to 4.48 eV for CZO fihns.展开更多
ZrO2 films on NaCl(100) substrate produced by oxygen ion bombardment and argon ion sputtering of Zr are analysed using TEM, XRD and XPS. The result of TEM shows that only cubic phase exists for the ZrO2 film produced ...ZrO2 films on NaCl(100) substrate produced by oxygen ion bombardment and argon ion sputtering of Zr are analysed using TEM, XRD and XPS. The result of TEM shows that only cubic phase exists for the ZrO2 film produced by oxygen ion bombardment with 30μA/cm2 and 200eV, while the XRD result shows that there seems to exhibit a small quanitity of monoclinic phase apart from cubic one under the production condition of oxygen ion of 25μA/cm2, 100eV.展开更多
Values of critieal eurrent densityJ。exceeding lo6A·em一2 at 77K and zerofield have been rePorted for thinmagnetlcfllnls ofYBaoCu:O,on sinZle ervstal substrates ofSrTIO:〔l一3)and一MgO(4,5)by manvfeseafCnerS.bllt...Values of critieal eurrent densityJ。exceeding lo6A·em一2 at 77K and zerofield have been rePorted for thinmagnetlcfllnls ofYBaoCu:O,on sinZle ervstal substrates ofSrTIO:〔l一3)and一MgO(4,5)by manvfeseafCnerS.bllt tne rCSUltS OIJ、)IU一A’cm一IorY廿tU Illms on suoslrale 01 slngleerystal ZrO:(100)have not been found out inPublished PaPers 50 far.Owing to themierostrueture eharacters and highJ。ofYBCO films by contrast with bulk it 15 themost Possible to aPPly the fllms to eleetronicfield first.Therefore it 15 more signifieant toimProve values ofjcsubstrate with betterPIOCeSSJc>展开更多
ZrO2/TiO2 composite photocatalytic film was produced on the pure titanium substrate using in-situ Zr(OH)4 colloidal particle by the micro-arc oxidation technique and characterized by scanning electron microscope (...ZrO2/TiO2 composite photocatalytic film was produced on the pure titanium substrate using in-situ Zr(OH)4 colloidal particle by the micro-arc oxidation technique and characterized by scanning electron microscope (SEM), energy dispersive X-ray (EDX), X-ray diffraction (XRD) and ultraviolet-visible (UV-Vis) spectrophotometer. The composite film shows a lamellar and porous structure which consists of anatase, futile and ZrO2 phases. The optical absorption edge of film is shifted to longer wavelength when ZrO2 is introduced to TiO2. Furthermore, the photocatalytic reaction rate constants of degradation of rhodamine B solution with ZrO2/TiO2 composite film and pure TiO2 film under ultraviolet irradiation are measured as 0.0442 and 0.0186 h 1, respectively.展开更多
Cu/ZrO2/SiO2 are efficient catalysts for the selective hydrogenation of CO2 to CH3OH. In order to understand the role of ZrO2 in these mixed-oxides based catalysts, in situ X-ray absorption spectroscopy has been carri...Cu/ZrO2/SiO2 are efficient catalysts for the selective hydrogenation of CO2 to CH3OH. In order to understand the role of ZrO2 in these mixed-oxides based catalysts, in situ X-ray absorption spectroscopy has been carried out on the Cu and Zr K-edge. Under reaction conditions, Cu remains metallic, while Zr is present in three types of coordination environment associated with 1) bulk ZrO2, 2) coordinatively saturated and 3) unsaturated Zr(Ⅳ) surface sites. The amount of coordinatively unsaturated Zr surface sites can be quantified by linear combination fit of reference X-Ray absorption near edge structure (XANES) spectra and its amount correlates with CH3OH formation rates, thus indicating the importance of Zr(Ⅳ) Lewis acid surface sites in driving the selectivity toward CH3OH. This finding is consistent with the proposed mechanism, where CO2 is hydrogenated at the interface between the Cu nanoparticles that split H2 and Zr(Ⅳ) surface sites that stabilizes reaction intermediates.展开更多
摘要Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor(VDMOS) devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
基金Project(10574085) supported by the National Natural Science Foundation of ChinaProject(207020) supported by the Science Technology Key Project of the Ministry of Education, China
摘要[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and (111) mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 (0.6 nm)/FePt (3 nm)]5/Ag (50 nm) films and highly (001)-oriented films can be obtained in the [SiO2 (2 nm)/FePt (3 nm)]5/Ag (50 nm) films.
基金Supported by the National Natural Science Foundation of China under Grant No 11774438the Natural Science Foundation of Jiangsu Province under Grant No BK20151172+2 种基金the Changzhou Science and Technology Bureau under Grant No CJ20160028the Qing Lan Project,the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences
摘要After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data retention ability(189°C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO_2(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO_2(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m·K).
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50842028 and 50972012)the National Basic Research Program of China (Grant No 2007CB613301)
摘要Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications. Au/SiO2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma sputtering. Au particles as perfect spheres with diameters between 10 nm and 30 nm are uniformly dispersed in the SiO2 matrix. Optical absorption peaks due to the surface plasmon resonance of Au particles are observed. The absorption property is enhanced with the increase of Au content, showing a maximum value in the films with 37 vol% Au. The absorption curves of the Au/SiO2 thin films with 3 vol% to 37 vol% Au accord well with the theoretical optical absorption spectra obtained from Mie resonance theory. Increasing Au content over 37 vol% results in the partial connection of Au particles, whereby the intensity of the absorption peak is weakened and ultimately replaced by the optical absorption of the bulk. The band gap decreases with Au content increasing from 3 vol% to 37 vol % but increases as Au content further increases.
基金supported by the National Natural Science Foundation of China(Grant Nos.51272224 and 11164031)
摘要Copper (Cu)-doped ZrO2 (CZO) films with different Cu content (0 at.%- 8.07 at.%) are successfully deposited on Si (100) substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. The influences of Cu content on structural, morphological, optical and electrical properties of CZO films are discussed in detail. The CZO films exhibit ZrO2 monocline (1^-11) preferred orientation, which indicates that Cu atoms are doped in ZrO2 host lattice. The crystallite size estimated form x-ray diffraction (XRD) increases by Cu doping, which accords with the result observed from the scanning electron microscope (SEM). The electrical resistivity decreases from 2.63 Ω·cm to 1.48 Ω·cm with Cu doping content increasing, which indicates that the conductivity of CZO film is improved. However, the visible light transmittances decrease slightly by Cu doping and the optical band gap values decrease from 4.64 eV to 4.48 eV for CZO fihns.
摘要ZrO2 films on NaCl(100) substrate produced by oxygen ion bombardment and argon ion sputtering of Zr are analysed using TEM, XRD and XPS. The result of TEM shows that only cubic phase exists for the ZrO2 film produced by oxygen ion bombardment with 30μA/cm2 and 200eV, while the XRD result shows that there seems to exhibit a small quanitity of monoclinic phase apart from cubic one under the production condition of oxygen ion of 25μA/cm2, 100eV.
摘要Values of critieal eurrent densityJ。exceeding lo6A·em一2 at 77K and zerofield have been rePorted for thinmagnetlcfllnls ofYBaoCu:O,on sinZle ervstal substrates ofSrTIO:〔l一3)and一MgO(4,5)by manvfeseafCnerS.bllt tne rCSUltS OIJ、)IU一A’cm一IorY廿tU Illms on suoslrale 01 slngleerystal ZrO:(100)have not been found out inPublished PaPers 50 far.Owing to themierostrueture eharacters and highJ。ofYBCO films by contrast with bulk it 15 themost Possible to aPPly the fllms to eleetronicfield first.Therefore it 15 more signifieant toimProve values ofjcsubstrate with betterPIOCeSSJc>
基金Project(gf200901002)supported by the Open Research Fund of National Defense Key Disciplines Laboratory of Light Alloy Processing Science and Technology of Nanchang Hangkong University,China
摘要ZrO2/TiO2 composite photocatalytic film was produced on the pure titanium substrate using in-situ Zr(OH)4 colloidal particle by the micro-arc oxidation technique and characterized by scanning electron microscope (SEM), energy dispersive X-ray (EDX), X-ray diffraction (XRD) and ultraviolet-visible (UV-Vis) spectrophotometer. The composite film shows a lamellar and porous structure which consists of anatase, futile and ZrO2 phases. The optical absorption edge of film is shifted to longer wavelength when ZrO2 is introduced to TiO2. Furthermore, the photocatalytic reaction rate constants of degradation of rhodamine B solution with ZrO2/TiO2 composite film and pure TiO2 film under ultraviolet irradiation are measured as 0.0442 and 0.0186 h 1, respectively.
基金E.L.,K.L.,P.W.,and S.T.are supported by the SCCER-Heat and Energy Storage program
摘要Cu/ZrO2/SiO2 are efficient catalysts for the selective hydrogenation of CO2 to CH3OH. In order to understand the role of ZrO2 in these mixed-oxides based catalysts, in situ X-ray absorption spectroscopy has been carried out on the Cu and Zr K-edge. Under reaction conditions, Cu remains metallic, while Zr is present in three types of coordination environment associated with 1) bulk ZrO2, 2) coordinatively saturated and 3) unsaturated Zr(Ⅳ) surface sites. The amount of coordinatively unsaturated Zr surface sites can be quantified by linear combination fit of reference X-Ray absorption near edge structure (XANES) spectra and its amount correlates with CH3OH formation rates, thus indicating the importance of Zr(Ⅳ) Lewis acid surface sites in driving the selectivity toward CH3OH. This finding is consistent with the proposed mechanism, where CO2 is hydrogenated at the interface between the Cu nanoparticles that split H2 and Zr(Ⅳ) surface sites that stabilizes reaction intermediates.