期刊文献+
任意字段
题名或关键词
题名
关键词
摘要
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息
共找到125篇文章
< 1 2 … 7 >
每页显示 20 50 100
已选0条
引用分析
参考文献
引证文献
 统计分析
检索结果
已选文献
显示方式：
Preparation and Characterization of CeO2-TiO2/SnO2:Sb Films Deposited on Glass Substrates by R.F.Sputtering 认领 引用 被引量：6
1
作者 ZHAO Qingnan DONG Yuhong +2 位作者 NI Jiamiao WANG Peng ZHAO Xiujian 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2008年第4期443-447,共5页
CeO2-TiO2 films and CeO2-TiO/SnO2:Sb(6 mol%)double films were deposited on glass substrates by radio-frequency magnetron sputtering(R.F.Sputtering),using SnO2:Sb(6 mol%)target,and CeO2-TiO2 targets with different mola... CeO2-TiO2 films and CeO2-TiO/SnO2:Sb(6 mol%)double films were deposited on glass substrates by radio-frequency magnetron sputtering(R.F.Sputtering),using SnO2:Sb(6 mol%)target,and CeO2-TiO2 targets with different molar ratio of CeO2 to TiO2(CeO2:TiO2-0:1.0;0.1:0.9;0.2:0.8;0.3:0.7;0.4:0.6;0.5:0.5;0.6:0.4;0.7:0.3;0.8:0.2;0.9:0.1;1.0:0).The films are characterized by UV-visible transmission and infrared reflection spectra,scanning electron microscopy(SEM),Raman spectroscopy,X-ray photoelectron spectroscopy(XPS)and X-ray diffraction(XRD),respectively.The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV,there are Ce^3-,Ce^4-and Ti^4-on the surface of the films;the glass substrates coated with CeO2-TiO2(Ce/Ti=0.5:0.5;0.6:0.4)/SnO2:Sb(6 mol%)double films show high absorbing UV(〉99),high visible light transmission(75%)and good infrared reflection(〉70%).The sheet resistance of the films is 30-50Ω/□.The glass substrates coated with the double functional films can be used as window glass of buildings,automobile and so on. 展开更多
关键词 coating glass CeO2-TiO/SnO2:Sb double thin films absorbing UV IR reflection R.F.sputterin
暂未订购 下载PDF
Structural Evolution and Phase Change Properties of C-Doped Ge_2Sb_2Te_5 Films During Heating in Air 认领 引用 被引量：1
2
作者 郑龙 杨幸明 +4 位作者 胡益丰 翟良君 薛建忠 朱小芹 宋志棠 《Chinese Physics Letters》 SCIE EI CAS CSCD 2018年第12期41-44,共4页
We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbondoped Ge2 Sb2 Te5（C-GST） films during heating in air. Both the C-GST films without and with a thin SiO2... We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbondoped Ge2 Sb2 Te5（C-GST） films during heating in air. Both the C-GST films without and with a thin SiO2 capping layer（C-GST and C-GST/SiO2） are deposited for comparison. Large differences are observed between C-GST and C-GST/SiO2 films in resistance-temperature, x-ray diffraction, x-ray photoelectron spectroscopy,Raman spectra, data retention capability and optical band gap measurements. In the C-GST film, resistancetemperature measurement reveals an unusual smooth decrease in resistance above 110℃ during heating. Xray diffraction result has excluded the possibility of phase change in the C-GST film below 170℃. The x-ray photoelectron spectroscopy experimental result reveals the evolution of Te chemical valence because of the carbon oxidation during heating. Raman spectra further demonstrate that phase changes from an amorphous state to the hexagonal state occur directly during heating in the C-GST film. The quite smooth decrease in resistance is believed to be related with the formation of Te-rich GeTe4-n Gen（n = 0, 1） units above 110℃ in the C-GST film. The oxidation of carbon is harmful to the C-GST phase change properties. 展开更多
关键词 GST Structural Evolution and Phase Change Properties of C-Doped Ge2Sb2Te5 Films During Heating in Air Sb
暂未订购 下载PDF
Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD 认领 引用 被引量：1
3
作者 Deheng ZHANGHonglei MA 《Journal of Materials Science & Technology》 SCIE EI CAS 1997年第1期50-56,共7页
Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2... Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films. 展开更多
关键词 SnO cm Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO2 Films Deposited by APCVD
暂未订购 下载PDF
Crystallization Process of Superlattice-Like Sb/SiO_2 Thin Films for Phase Change Memory Application 认领 引用
4
作者 Xiao-Qin Zhu Rui Zhang +4 位作者 Yi-Feng Hu Tian-Shu Lai Jian-Hao Zhang Hua Zou Zhi-Tang Song 《Chinese Physics Letters》 SCIE EI CAS CSCD 2018年第5期99-103,共5页
After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data... After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data retention ability（189°C for 10 y）. The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb（3 nm）/SiO_2（7 nm）-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb（3 nm）/SiO_2（7 nm） thin film shows a low thermal conductivity of 0.13 W/（m·K）. 展开更多
关键词 Sb Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application SiO
暂未订购 下载PDF
Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory 认领 引用
5
作者 Yi-Feng Hu Xuan Guo +1 位作者 Qing-Qian Qin Tian-Shu Lai 《Chinese Physics Letters》 SCIE EI CAS CSCD 2018年第9期53-56,共4页
The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin f... The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed. 展开更多
关键词 VO Te Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory Sb
暂未订购 下载PDF
Optoelectronic properties of SnO2 thin films sprayed at different deposition times 认领 引用 被引量：1
6
作者 Allag Abdelkrim Saad Rahmane +2 位作者 Ouahab Abdelouahab Attouche Hafida Kouidri Nabila 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第4期296-302,共7页
This article presents the elaboration of tin oxide （SnO2） thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film propert... This article presents the elaboration of tin oxide （SnO2） thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film properties are investigated. The films are characterized by several techniques such as x-ray diffraction （XRD）, atomic force microscopy （AFM）, ultraviolet- visible （UV-Vis） transmission, and four-probe point measurements, and the results suggest that the prepared films are uniform and well adherent to the substrates. X-ray diffraction （XRD） patterns show that SnO2 film is of polycrystal with cassiterite tetragonal crystal structure and a preferential orientation along the （110） plane. The calculated grain sizes are in a range from 32.93 nm to 56.88 nm. Optical transmittance spectra of the films show that their high transparency average transmittances are greater than 65% in the visible region. The optical gaps of SnO2 thin films are found to be in a range of 3.64 eV-3.94 eV. Figures of merit for SnO2 thin films reveal that their maximum value is about 1.15 x 10-4 Ω-1 at λ = 550 nm. Moreover, the measured electrical resistivity at room temperature is on the order of 10^-2 Ω.cm. 展开更多
关键词 thin film SnO2 spray pyrolysis thickness properties
暂未订购 下载PDF
Optimization of Gas Sensing Performance of Nanocrystalline SnO_2 Thin Films Synthesized by Magnetron Sputtering 认领 引用 被引量：1
7
作者 N.Panahi M.T.Hosseinnejad +1 位作者 M.Shirazi M.Ghoranneviss 《Chinese Physics Letters》 SCIE EI CAS CSCD 2016年第6期99-103,共5页
Tin oxide （SnO2） is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ ... Tin oxide （SnO2） is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ and hydrogen gas sensing properties of SnO2 thin films synthesized by dc magnetron sputtering. The deposited samples are characterized by XRD, SEM, AFM, surface area measurements and surface profiler. Also the H2 gas sensing properties of SnO2 deposited samples are performed against a wide range of operating temperature. The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO2 films strongly depends on the deposition time. SEM and AFM analyses reveal that the size of nanoparticles or agglomerates, and both average and rms surface roughness is enhanced with the increasing deposition time. Also gas sensors based on these SnO2 nanolayers show an acceptable response to hydrogen at various operating temperatures. 展开更多
关键词 of on as it or in Optimization of Gas Sensing Performance of Nanocrystalline SnO2 Thin Films Synthesized by Magnetron Sputtering SnO by
暂未订购 下载PDF
Determination and Analysis of Optical Constant of Annealed Sn_2Sb_2S_5 Thin Films 认领 引用 被引量：2
8
作者 Yousra Fadhli Adel Rabhi Mounir Kanzari 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2015年第5期656-662,共7页
The effects of annealing on structural, optical and electrical properties of Sn2Sb2S5 thin films were studied. Sn2Sb2S5 thin films were deposited on no-heated glass substrates by single source vacuum evaporation metho... The effects of annealing on structural, optical and electrical properties of Sn2Sb2S5 thin films were studied. Sn2Sb2S5 thin films were deposited on no-heated glass substrates by single source vacuum evaporation method. The as- deposited films were annealed in air for 1 h at 100, 200 and 300 ℃. XRD study shows that annealed films are crystallized according to the preferential orientation （602）. Optical measurements show that the thin films have relatively high absorption coefficients in the range of 10s-106 cm-1 in the energy range of 2-3.25 eV. It is also found that Sn2Sb2S5 exhibit two optical direct transitions. The models of Wemple-DiDomenico and Spitzer-Fan were applied for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants. The electrical resistivity measurements are recorded, and two activation energy values are determined. The layers annealed at 200 and 300 ℃ exhibit a resistive hysteresis behavior. The properties reported here offer perspective to Sn2SbES5 for its application in many advanced technologies. 展开更多
关键词 Sn2Sb2S5 thin films Optical constants Electrical properties
暂未订购 下载PDF
High Sensitivity of Porous Cu-Doped SnO2 Thin Films to Methanol 认领 引用
9
作者 Sara Benzitouni Mourad Zaabat +6 位作者 Aicha Khial Djamil Rechem Ahlem Benaboud Dhikra Bouras Abdelhakim Mahdjoub Mahdia Toubane Raphael Coste 《Advances in Nanoparticles》 CAS 2016年第2期140-148,共9页
Porous Cu-doped SnO2 thin films were synthesized by the sol-gel dip-coating method for enhancing methanol sensing performance. The effect of Cu doping concentration on the SnO2 sensibility was investigated. XRD data c... Porous Cu-doped SnO2 thin films were synthesized by the sol-gel dip-coating method for enhancing methanol sensing performance. The effect of Cu doping concentration on the SnO2 sensibility was investigated. XRD data confirm that the fabricated SnO2 films are polycrystalline with tetragonal rutile crystal structure. AFM and SEM micrographs confirmed the roughness and the porosity of SnO2 surface, respectively. UV-Vis spectrum shows that SnO2 thin films exhibit high transmittance in the visible region &#126;95%. The band gap (3.80 - 3.92 eV) and the optical thickness (893 - 131 nm) of prepared films were calculated from transmittance data. The sensing results demonstrate that SnO2 films have a high sensitivity and a fast response to methanol. In particular, 3% Cu-SnO2 films have a higher sensitivity (98%), faster response (10-2 s) and shorter recovery time (18 s) than other films. 展开更多
关键词 SnO2 Cu-Doped Sensitivity Porosity Response Time Band Gap Thin Films
暂未订购 下载PDF
XPS Study of Electroless Deposited Sb2Se3 Thin Films for Solar Cell Absorber Material 认领 引用
10
作者 Towhid Adnan Chowdhury 《Energy and Power Engineering》 2023年第11期363-371,共9页
As a thin film solar cell absorber material, antimony selenide (Sb2Se3) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectro... As a thin film solar cell absorber material, antimony selenide (Sb2Se3) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb2Se3 thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive. 展开更多
关键词 Sb2Se3 Electroless Depth Profiling Thin Film X-Ray Photoelectron Spectroscopy
暂未订购 下载PDF
Depth Profile Study of Electroless Deposited Sb2S3 Thin Films Using XPS for Photovoltaic Applications 认领 引用
11
作者 Towhid Adnan Chowdhury 《Materials Sciences and Applications》 2023年第7期397-406,共10页
Sb2S3 has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb2S... Sb2S3 has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb2S3 thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically. 展开更多
关键词 Sb2S3 Depth Profiling X-Ray Photoelectron Spectroscopy Thin Film Electroless
暂未订购 下载PDF
SnO_2:Sb薄膜的制备和光致发光性质 认领 引用 被引量：4
12
作者 王玉恒 马瑾 +3 位作者 计峰 余旭浒 张锡健 马洪磊 《Journal of Semiconductors》 CAS 北大核心 2005年第5期922-926,共5页
用射频磁控溅射法在玻璃衬底上制备出SnO2∶Sb薄膜.制备样品为多晶薄膜,具有纯氧化锡的四方金红石结构和(110)择优取向,Sb离子以替位式掺杂的形式存在于SnO2 晶格中.室温条件下对样品进行光致发光测量,在392nm附近观测到强的紫外紫光发... 用射频磁控溅射法在玻璃衬底上制备出SnO2∶Sb薄膜.制备样品为多晶薄膜,具有纯氧化锡的四方金红石结构和(110)择优取向,Sb离子以替位式掺杂的形式存在于SnO2 晶格中.室温条件下对样品进行光致发光测量,在392nm附近观测到强的紫外紫光发射,发射强度随制备功率的增加而增强,且样品退火后发射强度也明显增强.紫外紫光发射的起源被归于由Sb形成的施主能级和受主能级之间的电子跃迁. 展开更多
关键词 SnO2:Sb薄膜 射频磁控溅射 光致发光
暂未订购 下载PDF
Ti/Ru/SnO_2+Sb_2O_5电极的制备及其对垃圾渗滤液的电催化氧化 认领 引用 被引量：11
13
作者 汪昕蕾 秦侠 +2 位作者 袁少鹏 周梦楠 焦点 《环境工程学报》 CAS CSCD 北大核心 2018年第7期1865-1871,共7页
通过实验探究了不同Ru掺杂量对Ti/Ru/SnO_2+Sb2O5电极电化学性能及表面结构的影响。结果表明:Sb含量10%,溶胶涂覆6层,煅烧温度600℃,煅烧时间1 h条件下,Ru掺杂量为10%的涂层电极的加速寿命最长,为50 min;该条件下制备的电极涂层表面金... 通过实验探究了不同Ru掺杂量对Ti/Ru/SnO_2+Sb2O5电极电化学性能及表面结构的影响。结果表明:Sb含量10%,溶胶涂覆6层,煅烧温度600℃,煅烧时间1 h条件下,Ru掺杂量为10%的涂层电极的加速寿命最长,为50 min;该条件下制备的电极涂层表面金属氧化物SnO_2的特征峰强度较大,峰形窄;涂层表面光滑,无裂缝。同时用Ti/Ru/SnO_2+Sb2O5电极处理垃圾渗滤液MBR出水,Ru掺杂为10%的电极对废水COD去除率最高,为93.33%,电解出水芳香化程度大幅降低,对腐殖质和芳香族化合物的去除效果良好。研究对Ti/Ru/SnO_2+Sb2O5电极在实际工业生产中的应用具有指导意义。 展开更多
关键词 Ru掺杂量 Ti/Ru/SnO2+Sb2O5电极 电催化氧化 垃圾渗滤液MBR出水
暂未订购 下载PDF
Sb掺杂纳米SnO_2/多孔Ti电极的制备及其降解甲基橙性能(英文) 认领 引用 被引量：4
14
作者 李广忠 李纲 +4 位作者 王辉 向长淑 庄建东 刘茜 汤慧萍 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2015年第6期1326-1330,共5页
利用热分解方法在多孔钛上制备了Sb掺杂纳米SnO2电极。也研究了该电极降解甲基橙的电化学性能。SEM和XRD测试表明,在多孔钛基体上可获得完整的、无裂缝的涂层。无裂缝的涂层表面由粒径范围在80-230 nm的Sb掺杂SnO2纳米颗粒组成。HRTEM... 利用热分解方法在多孔钛上制备了Sb掺杂纳米SnO2电极。也研究了该电极降解甲基橙的电化学性能。SEM和XRD测试表明,在多孔钛基体上可获得完整的、无裂缝的涂层。无裂缝的涂层表面由粒径范围在80-230 nm的Sb掺杂SnO2纳米颗粒组成。HRTEM测试结果表明,SnO2纳米颗粒由5-6 nm细小颗粒构成。在其余条件相同的情况下,强化寿命试验表明,Sb掺杂纳米SnO2/多孔Ti电极的寿命远大于致密钛基体上的电极。Sb掺杂纳米SnO2/多孔Ti电极可将浓度为100 mg/L的甲基橙溶液降解到8 mg/L,显示出该电极具有很强的有机物污染物电催化降解能力。并指出采用简单的表面处理技术,将使多孔钛具有很高的潜力被应用到有机污水降解领域。 展开更多
关键词 Sb掺杂 纳米SnO2 多孔Ti电极 甲基橙
暂未订购 下载PDF
基板温度对SnO_2:Sb薄膜结构和性能的影响 认领 引用 被引量：7
15
作者 谢莲革 汪建勋 +3 位作者 沈鸽 翁文剑 杜丕一 韩高荣 《功能材料》 EI CAS 北大核心 2005年第3期411-413,418,共3页
以单丁基三氯化锡(MBTC)和 SbCl3 为反应原料,采用常压化学气相沉积法(APCVD 法)在不同的基板温度下制备 Sb 掺杂 SnO2 薄膜,用 XRD、SEM表征了薄膜的结构和形貌,通过测量薄膜的方块电阻、载流子浓度、霍尔(Hall)系数、紫外可见光谱等性... 以单丁基三氯化锡(MBTC)和 SbCl3 为反应原料,采用常压化学气相沉积法(APCVD 法)在不同的基板温度下制备 Sb 掺杂 SnO2 薄膜,用 XRD、SEM表征了薄膜的结构和形貌,通过测量薄膜的方块电阻、载流子浓度、霍尔(Hall)系数、紫外可见光谱等性质,详细研究了基板温度对薄膜结构和光电性能的影响。实验表明 550℃以上制备的样品为多晶薄膜,并保持四方相金红石型结构;在 650℃下沉积的薄膜具有最低的方块电阻值,为 72Ω/□;在可见光区域薄膜透射率和反射率随着基板温度的提高均有所下降。 展开更多
关键词 APCVD法 Sb掺杂SnO2薄膜 基板温度
暂未订购 下载PDF
耐酸非贵金属Ti/MO_2阳极SnO_2+Sb_2O_4中间层研究 认领 引用 被引量：13
16
作者 梁镇海 张福元 孙彦平 《稀有金属材料与工程》 SCIE EI CAS 北大核心 2006年第10期1605-1609,共5页
采用热分解法制备了非贵金属SnO2+Sb2O4中间层Ti基MO2活性层电极,利用SEM,XRD和XPS方法对中间层进行了表征。测定了Ti/SnO2+Sb2O4/MnO2和Ti/SnO2+Sb2O4/PbO2电极在硫酸溶液中的析氧极化曲线,二者起始析氧过电位均比贵金属小;考察了在高... 采用热分解法制备了非贵金属SnO2+Sb2O4中间层Ti基MO2活性层电极,利用SEM,XRD和XPS方法对中间层进行了表征。测定了Ti/SnO2+Sb2O4/MnO2和Ti/SnO2+Sb2O4/PbO2电极在硫酸溶液中的析氧极化曲线,二者起始析氧过电位均比贵金属小;考察了在高电流密度(4A/cm2)下的加速寿命,二者依次分别达到18h和86h。实验表明,SnO2+Sb2O4是一种具有良好导电性和结合力的耐酸Ti基MO2电极中间层材料。 展开更多
关键词 SnO2+Sb2O4中间层 钛基氧化物 耐酸阳极 非贵金属
暂未订购 下载PDF
退火处理对SnO_2:Sb薄膜结构和光致发光性质的影响 认领 引用 被引量：6
17
作者 王玉恒 马瑾 +2 位作者 计峰 余旭浒 马洪磊 《稀有金属材料与工程》 SCIE EI CAS 北大核心 2005年第11期1747-1750,共4页
用射频磁控溅射法在玻璃衬底上制备出SnO2:Sb薄膜,研究了不同掺杂和退火对薄膜结构的影响。制备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄,晶粒生长的择优取向为(110)。室温下光致发光测量首次观测到392nm附近存在紫外-紫光发射,并对... 用射频磁控溅射法在玻璃衬底上制备出SnO2:Sb薄膜,研究了不同掺杂和退火对薄膜结构的影响。制备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄,晶粒生长的择优取向为(110)。室温下光致发光测量首次观测到392nm附近存在紫外-紫光发射,并对SnO2:Sb的光致发光机制进行了探索性研究。 展开更多
关键词 射频磁控溅射法 SnO2:Sb薄膜 光致发光
暂未订购 下载PDF
钕改性钛基SnO_2/Sb电催化电极的制备及表征 认领 引用 被引量：18
18
作者 李善评 胡振 曹翰林 《中国稀土学报》 EI CAS 北大核心 2008年第3期291-297,共7页
为改善钛基SnO2/Sb电极的电催化性能,采用浸渍法制备了Nd改性钛基SnO2/Sb电极。以活性艳红X-3B为目标有机物,考察电极的电催化性能,对制备温度和Nd掺杂量进行了研究,确定了适宜的制备条件为:热处理温度550℃,Nd掺杂量1.0%。采用SEM,EDS,... 为改善钛基SnO2/Sb电极的电催化性能,采用浸渍法制备了Nd改性钛基SnO2/Sb电极。以活性艳红X-3B为目标有机物,考察电极的电催化性能,对制备温度和Nd掺杂量进行了研究,确定了适宜的制备条件为:热处理温度550℃,Nd掺杂量1.0%。采用SEM,EDS,XRD及XPS等分析方法对所制备电极的表面形貌、元素组成及结构进行分析,发现掺杂Nd可使SnO2粒径变小,有利于电极电催化性能的改善,同时Nd元素的引入可使杂质元素Sb,Nd在电极表面涂层富集。Nd改性钛基SnO2/Sb电极表面主要是四方相金红石结构的SnO2晶体,掺杂的Sb和Nd分别以Sb5+和Nd3+的形式存在。电极动电位扫描测试结果表明,Nd改性钛基SnO2/Sb电极具有较高的阳极析氧电位,有利于有机物的阳极氧化降解。 展开更多
关键词 SnO2/Sb电极 钕 掺杂 电催化 稀土
暂未订购 下载PDF
有机衬底SnO_2∶Sb透明导电膜的研究 认领 引用 被引量：8
19
作者 马瑾 郝晓涛 +2 位作者 马洪磊 张德恒 徐现刚 《Journal of Semiconductors》 CAS 北大核心 2002年第6期599-603,共5页
采用射频磁控溅射法在有机薄膜衬底上制备出 Sn O2 ∶ Sb透明导电膜 ,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究 .制备的样品为多晶薄膜 ,并且保持了纯二氧化锡的金红石结构 .Sn O2 ∶ Sb薄膜中 Sb2 O3的最佳掺... 采用射频磁控溅射法在有机薄膜衬底上制备出 Sn O2 ∶ Sb透明导电膜 ,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究 .制备的样品为多晶薄膜 ,并且保持了纯二氧化锡的金红石结构 .Sn O2 ∶ Sb薄膜中 Sb2 O3的最佳掺杂比例为 6 % .适当调节制备参数 ,可以获得在可见光范围内平均透过率大于 85 %的有机衬底 Sn O2 ∶ Sb透明导电薄膜 ,其电阻率～ 3.7× 10 - 3Ω· cm ,载流子浓度～ 1.5 5× 10 2 0 cm- 3,霍耳迁移率～ 13cm2 · V- 1 · 展开更多
关键词 有机衬底 SnO2:Sb膜 磁控溅射 透明导电膜 二氧化锡
暂未订购 下载PDF
CVD法制备Sb掺杂SnO_2薄膜的结构与性能研究 认领 引用 被引量：7
20
作者 谢莲革 沃银花 +4 位作者 汪建勋 沈鸽 翁文剑 刘起英 韩高荣 《浙江大学学报（工学版）》 EI CAS 北大核心 2005年第11期1824-1828,共5页
采用化学气相沉积法(CVD)制备了Sb掺杂SnO2薄膜(ATO),研究了Sb掺杂量对ATO薄膜结构和性能的影响.利用X射线衍射(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)等分析手段对所制得薄膜的结构、形貌、成分等进行了表征,XRD结果表明在基板温... 采用化学气相沉积法(CVD)制备了Sb掺杂SnO2薄膜(ATO),研究了Sb掺杂量对ATO薄膜结构和性能的影响.利用X射线衍射(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)等分析手段对所制得薄膜的结构、形貌、成分等进行了表征,XRD结果表明在基板温度为665℃时能够制得结晶性能较好的多晶薄膜,XPS分析确定掺杂后的Sb以Sb5+离子形式存在.讨论了Sb掺杂量对方块电阻、透射率和反射率等薄膜性质的影响,结果表明,当Sb掺杂量为2%时取得最小方块电阻为7.8Ω/□,在可见光区薄膜的透射率和反射率随着Sb掺杂量的增加呈下降趋势.最后探讨了Sb掺杂SnO2薄膜的显色特性,认为Sb5+离子的本征吸收是薄膜显色的主要原因. 展开更多
关键词 化学气相沉积(CVD) Sb掺杂SnO2薄膜 掺杂量
暂未订购 下载PDF
已选0条
引用分析
参考文献
引证文献
 统计分析
检索结果
已选文献
上一页 1 2 … 7 下一页 到第 页
在线咨询 使用帮助 返回顶部 意见反馈