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Multiple-quantum-well perovskite for hole-transport-layer-free light-emitting diodes 认领 引用 被引量：2
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作者 Peifeng Li Jie Wang +7 位作者 Hong Chen Hao Zhang Cheng Li Wenjie Xu Renzhi Li Lin Zhu Nana Wang Jianpu Wang 《Chinese Chemical Letters》 SCIE CAS CSCD 2022年第2期1017-1020,共4页
We demonstrate hole-transport-layer-free light-emitting diodes(LEDs) based on solution-processed multiple-quantum-well(MQW) perovskite. The MQW perovskite can self-assemble to a unique structure of vertically graded d... We demonstrate hole-transport-layer-free light-emitting diodes(LEDs) based on solution-processed multiple-quantum-well(MQW) perovskite. The MQW perovskite can self-assemble to a unique structure of vertically graded distribution with two-dimensional layered perovskite covered by three-dimensionallike perovskite at top, which can naturally form a barrier of electron transporting to the anode interface,thereby enhancing the charge capture efficiency. This leads to hole-transport-layer-free MQW perovskite LEDs reaching an external quantum efficiency(EQE) of 9.0% with emission peak at 528 nm, which is over6 times of LEDs based on three-dimensional perovskite with the same device structure, representing the record EQE of hole-transport-layer-free perovskite LED. 展开更多
关键词 Perovskite light-emitting diodes Hole-transport-layer-free device Multiple-quantum-well perovskite Green emission
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Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells 认领 引用 被引量：1
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作者 刘诗涛 全知觉 王立 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第3期558-563,共6页
Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths fo... Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the fiat quantum wells. As the barrier thickness of the fiat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells. 展开更多
关键词 V-shaped pits InGaN/GaN multiple-quantum-well solar cells carrier transport
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Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer 认领 引用 被引量：4
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作者 WANG JiaXing WANG Lai +2 位作者 ZHAO Wei ZOU Xiang LUO Yi 《Science China(Technological Sciences)》 SCIE EI CAS 2010年第2期306-308,共3页
Blue InGaN multiple-quantum-well(MQW)samples with different InxGa1-xN(x=0.01–0.04)underneath layers(ULs)were grown by metal organic vapor phase epitaxy(MOVPE).Temperature dependent photoluminescence showed that the I... Blue InGaN multiple-quantum-well(MQW)samples with different InxGa1-xN(x=0.01–0.04)underneath layers(ULs)were grown by metal organic vapor phase epitaxy(MOVPE).Temperature dependent photoluminescence showed that the InGaN UL can improve the internal quantum efficiency(IQE)of MQW effectively due to strain release.And a maximum IQE of 50%was obtained when the thickness and In content of the InGaN UL were 60 nm and 0.01,respectively.Furthermore,the larger In content or thickness of the InGaN UL makes the IQE lower.Arrhenius fit to the experiment data showed that the IQE fall was mainly caused by the quantity increase of the nonradiative recombination centers,which was believed related to the accumulated stress in InGaN ULs. 展开更多
关键词 InGaN underneath layer(UL) multiple-quantum-well(MQW) internal quantum efficiency(IQE) Arrhenius formula
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Effect of V-Pits Coverage Optoelectronic Characteristics in Green GaN-Based Mini-Light-Emitting Diodes Grown by MOCVD 认领 引用 被引量：1
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作者 Shenglong Wei Xiuheng Zhou +12 位作者 Xiaofeng Chen Rongkun Chen Feifan Ma Yihong Chen Vedaste Uwihoreye Freddy E.Oropeza Yongxing Liu Likai Xun Haihui Xin Kaiyi Wu Xitian Liu Yongzhou Zhao Kelvin H.L.Zhang 《Electron》 CSCD 2025年第3期31-39,共9页
V-pits have been intensively studied for their role in light-emitting diodes(LEDs).The coverage of V-pits in InGaN/GaN multiquantum wells(MQWs)is critical for suppressing leakage path through electron blocking layer(E... V-pits have been intensively studied for their role in light-emitting diodes(LEDs).The coverage of V-pits in InGaN/GaN multiquantum wells(MQWs)is critical for suppressing leakage path through electron blocking layer(EBL).In this study,we have investigated the coverage of V-pits in green mini-LEDs modulated via growth parameters optimization and systematically analyzed the characteristics of the photoelectric properties associated with V-pits coverage on device.Elevated temperatures and pressures result in enhanced adatoms migration,which can achieve a coverage up to 98.8% of V-pits,improving the crystal quality due to stable surface.Electrical characterization reveals that although high-coverage devices exhibit suppressed leakage current,their peak external quantum efficiency(EQE)decreases,more seriously spectral blue shift and operating voltage increase due to compromised hole transport uniformity.Intriguingly,intermediate-coverage samples demonstrate superior breakdown voltage characteristics.Current-voltage curve analysis shows the ideality factor increases from 1.8 to 2.5 with improved coverage,indicating aggravated Shockley-Read-Hall(SRH)recombination with covered V-pits. 展开更多
关键词 GaN green LED InGaN miniaturization multiple-quantum-wells V-pits
Advances and prospects in nitrides based light-emitting-diodes 认领 引用 被引量：15
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作者 Li Jinmin Liu Zhe +4 位作者 Liu Zhiqiang Yan Jianchang Wei Tongbo Yi Xiaoyan Wang Junxi 《Journal of Semiconductors》 EI CAS CSCD 2016年第6期1-14,共14页
Due to their low power consumption,long lifetime and high efficiency,nitrides based white lightemitting-diodes(LEDs)have long been considered to be a promising technology for next generation illumination.In this work,... Due to their low power consumption,long lifetime and high efficiency,nitrides based white lightemitting-diodes(LEDs)have long been considered to be a promising technology for next generation illumination.In this work,we provide a brief review of the development of GaN based LEDs.Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented.We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-statelighting. 展开更多
关键词 nitrides light-emitting-diodes MOCVD multiple-quantum-well p-doping
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On-chip optical interconnect using visible light 认领 引用
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作者 Wei CAI Bing-cheng ZHU +5 位作者 Xu-min GAO Yong-chao YANG Jia-lei YUAN Gui-xia ZHU Yong-jin WANG Peter GRUNBERG 《Frontiers of Information Technology & Electronic Engineering》 SCIE EI CSCD 2017年第9期1288-1294,共7页
We propose and fabricate a monolithic optical interconnect on a GaN-on-silicon platform using a wafer-level technique. Because the InGaN/GaN mukiple-quantum-well diodes （MQWDs） can achieve light emission and detecti... We propose and fabricate a monolithic optical interconnect on a GaN-on-silicon platform using a wafer-level technique. Because the InGaN/GaN mukiple-quantum-well diodes （MQWDs） can achieve light emission and detection simultaneously, the emitter and collector sharing identical MQW structure are produced using the same process. Suspended waveguides interconnect the emitter with the collector to form in-plane light coupling. Monolithic optical interconnect chip integrates the emitter, waveguide, base, and collector into a multi-component system with a common base. Output states superposition and 1 × 2 in-piane light communication are experimentally demonstrated. The proposed monolithic optical interconnect opens a promising way toward the diverse applications from in-plane visible light communication to light-induced imaging, and optical sensing. artificial synaptic devices, intelligent display, on-chip 展开更多
关键词 Homogeneous integration Multiple-quantum-well diode Visible light interconnection Coexistence oflight emission and photodetection
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