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Observation of stabilized negative capacitance effect in hafnium-based ferroic films 认领 引用
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作者 Leilei Qiao Ruiting Zhao +4 位作者 Cheng Song Yongjian Zhou Qian Wang Tian-Ling Ren Feng Pan 《Materials Futures》 2024年第1期1-9,共9页
A negative capacitance(NC)effect has been proposed as a critical pathway to overcome the‘Boltzmann tyranny’of electrons,achieve the steep slope operation of transistors and reduce the power dissipation of current se... A negative capacitance(NC)effect has been proposed as a critical pathway to overcome the‘Boltzmann tyranny’of electrons,achieve the steep slope operation of transistors and reduce the power dissipation of current semiconductor devices.In particular,the ferroic property in hafnium-based films with fluorite structure provides an opportunity for the application of the NC effect in electronic devices.However,to date,only a transient NC effect has been confirmed in hafnium-based ferroic materials,which is usually accompanied by hysteresis and is detrimental to low-power transistor operations.The stabilized NC effect enables hysteresis-free and low-power transistors but is difficult to observe and demonstrate in hafnium-based films.This difficulty is closely related to the polycrystalline and multi-phase structure of hafnium-based films fabricated by atomic layer deposition or chemical solution deposition.Here,we prepare epitaxial ferroelectric Hf0.5Zr0.5O2 and antiferroelectric ZrO2 films with single-phase structure and observe the capacitance enhancement effect of Hf0.5Zr0.5O2/Al2O3 and ZrO2/Al2O3 capacitors compared to that of the isolated Al2O3 capacitor,verifying the stabilized NC effect.The capacitance of Hf0.5Zr0.5O2 and ZrO2 is evaluated as−17.41 and−27.64 pF,respectively.The observation of the stabilized NC effect in hafnium-based films sheds light on NC studies and paves the way for low-power transistors. 展开更多
关键词 negative capacitance effect fluorite structure hafnium-based ferroelectrics antiferroelectric
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