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Electronic structure and superconducting gap of HgBa2Ca2Cu3O8+δrevealed by laserbased angle-resolved photoemission spectroscopy 认领 引用
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作者 Taimin Miao Wenshan Hong +18 位作者 Qinghong Wang Shanshan Zhang Bo Liang Wenpei Zhu Neng Cai Mingkai Xu Shenjin Zhang Fengfeng Zhang Feng Yang Zhimin Wang Qinjun Peng Zuyan Xu Hanqing Mao Zhihai Zhu Xintong Li Guodong Liu Lin Zhao Yuan Li X.J.Zhou 《Chinese Physics B》 SCIE EI CAS CSCD 2026年第2期257-263,共7页
The spatially-resolved laser-based high resolution angle resolved photoemission spectroscopy(ARPES)measurements have been performed on the optimally-doped HgBa2Ca2Cu3O8+δ(Hg1223)superconductor with a T_(c... The spatially-resolved laser-based high resolution angle resolved photoemission spectroscopy(ARPES)measurements have been performed on the optimally-doped HgBa2Ca2Cu3O8+δ(Hg1223)superconductor with a Tc of 133 K.Two distinct regions are identified on the cleaved surface:the single Fermi surface region where only one Fermi surface is observed,and the double Fermi surface region where two Fermi surface sheets are resolved coming from both the inner(IP)and outer(OP)CuO2 planes.The electronic structure and superconducting gap are measured on both of these two regions.In both cases,the observed electronic states are mainly concentrated near the nodal region.The momentum dependence of the superconducting gap deviates from the standard d-wave form.These results indicate that the surface electronic structure of Hg1223 behaves more like that of underdoped cuprates. 展开更多
关键词 cuprate angle resolved photoemission spectroscopy(ARPES)
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Doping evolution of nodal electron dynamics in trilayer cuprate superconductor Bi2Sr2Ca2Cu3O10+δrevealed by laser-based angle-resolved photoemission spectroscopy 认领 引用
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作者 Hao Chen Jumin Shi +22 位作者 Xiangyu Luo Yinghao Li Yiwen Chen Chaohui Yin Yingjie Shu Jiuxiang Zhang Taimin Miao Bo Liang Wenpei Zhu Neng Cai Xiaolin Ren Chengtian Lin Shenjin Zhang Zhimin Wang Fengfeng Zhang Feng Yang Qinjun Peng Zuyan Xu Guodong Liu Hanqing Mao Xintong Li Lin Zhao X.J.Zhou 《Chinese Physics B》 SCIE EI CAS CSCD 2025年第7期141-146,共6页
The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi2Sr2Ca2Cu3O10+δ(Bi2223)is investigated using high-resolution laser-based angle-resolved photoemission spectr... The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi2Sr2Ca2Cu3O10+δ(Bi2223)is investigated using high-resolution laser-based angle-resolved photoemission spectroscopy(ARPES).Bi2223single crystals with different doping levels are prepared by controlled annealing,which cover the underdoped,optimallydoped and overdoped regions.The electronic phase diagram of Bi2223 is established which describes the Tcdependence on the sample doping level.The doping dependence of the nodal Fermi momentum for the outer(OP)and inner(IP)CuO2planes is determined.Charge distribution imbalance between the OP and IP CuO2planes is quantified,showing enhanced disparity with increasing doping.Nodal band dispersions demonstrate a prominent kink at~94 meV in the IP band,attributed to the unique Cu coordination in the IP plane,while a weaker~60 meV kink is observed in the OP band.The nodal Fermi velocity of both OP and IP bands is nearly constant at~1.62 eV·A independent of doping.These results provide important information to understand the origin of high Tcand superconductivity mechanism in high temperature cuprate superconductors. 展开更多
关键词 Bi2223 angle-resolved photoemission spectroscopy nodal electron dynamics doping evolution
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Angle-resolved photoemission spectroscopy study on transition-metal kagome materials 认领 引用
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作者 Jiangang Yang Jianwei Huang +1 位作者 Lin Zhao X.J.Zhou 《Chinese Physics B》 SCIE EI CAS CSCD 2025年第4期29-45,共17页
Angle-resolved photoemission spectroscopy(ARPES)has become a cornerstone technique for elucidating the electronic structures of emergent quantum materials.Among these,kagome materials—distinguished by their two-dimen... Angle-resolved photoemission spectroscopy(ARPES)has become a cornerstone technique for elucidating the electronic structures of emergent quantum materials.Among these,kagome materials—distinguished by their two-dimensional lattice of corner-sharing triangles—provide a fertile ground for investigating exotic quantum phenomena,driven by geometric frustration,electronic correlation,and topology.In this review,we present an overview of recent ARPES studies on transition-metal kagome materials.We first outline the fundamental features of their electronic structures,including van Hove singularities,Dirac points,and flat bands,and discuss the novel quantum states that arise from many-body interactions within the kagome lattice.We then highlight key ARPES investigations into these unique electronic structures,detailing their manifestation and associated quantum states in representative kagome materials.Finally,we offer a forward-looking perspective on the potential of ARPES to uncover new quantum phenomena and its broader implications for the study of underlying physics in kagome materials. 展开更多
关键词 kagome materials angle-resolved photoemission spectroscopy electron correlation electronic topology
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Molecular Frame Photoemission: Probe of the Photoionization Dynamics for Molecules in the Gas Phase 认领 引用 被引量：1
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作者 D. Dowek Y. J. Picard +2 位作者 P. Billaud C. Elkharrat J. C. Houver 《Chinese Journal of Chemical Physics》 SCIE EI CAS 2009年第2期178-186,共9页
Molecular frame photoemission is a very sensitive probe of the photoionization （PI） dynamics of molecules. This paper reports a comparative study of non-resonant and resonant photoionization of D2 induced by VUV cir... Molecular frame photoemission is a very sensitive probe of the photoionization （PI） dynamics of molecules. This paper reports a comparative study of non-resonant and resonant photoionization of D2 induced by VUV circularly polarized synchrotron radiation at SOLEIL at the level of the molecular frame photoelectron angular distributions （MFPADs）. We use the vector correlation method which combines imaging and time-of-flight resolved electron-ion coincidence techniques, and a generalized formalism for the expression of the Ⅰ（χ, θe, Фe） MFPADs, where χ is the orientation of the molecular axis with respect to the light quantization axis and （θe, Фe） the electron emission direction in the molecular frame. Selected MFPADs for a molecule aligned parallel or perpendicular to linearly polarized light, or perpendicular to the propagation axis of circularly polarized light, are presented for dissociative photoionization （DPI） of D2 at two photon excitation energies, hv=19 eV, where direct PI is the only channel opened, and hv=32.5 eV, i.e. in the region involving resonant excitation of Q1 and Q2 doubly excited state series. We discuss in particular the properties of the circular dichroism characterizing photoemission in the molecular frame for direct and resonant PI. In the latter case, a remarkable behavior is observed which may be attributed to the interference occurring between undistinguishable autoionization decay channels. 展开更多
关键词 Dissociative photoionization Molecular frame photoemission Circular dichroism in photoemission Autoionization dynamics Synchrotron radiation Vector correlation
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Photoemission of graded-doping GaN photocathode 认领 引用 被引量：4
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作者 付小倩 常本康 +3 位作者 王晓晖 李飙 杜玉杰 张俊举 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第3期481-485,共5页
We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, whic... We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10^17 cm-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile. 展开更多
关键词 GaN photocathode graded-doping photoemission quantum efficiency
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Common Electronic Features and Electronic Nematicity in Parent Compounds of Iron-Based Superconductors and FeSe/SrTiO_3 Films Revealed by Angle-Resolved Photoemission Spectroscopy 认领 引用 被引量：2
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作者 刘德发 赵林 +22 位作者 何少龙 胡勇 沈兵 黄建伟 梁爱基 徐煜 刘旭 何俊峰 牟代翔 刘单于 刘海云 刘国东 张文号 李坊森 马旭村 薛其坤 陈仙辉 陈根富 俞理 张君 许祖彦 陈创天 周兴江 《Chinese Physics Letters》 SCIE EI CAS CSCD 2016年第7期152-156,共5页
We report comprehensive angle-resolved photoemission investigations on the electronic structures and nematicity of the parent compounds of the iron-based superconductors including CeFeAsO, BaFe2As2, NaFeAs, FeSe and u... We report comprehensive angle-resolved photoemission investigations on the electronic structures and nematicity of the parent compounds of the iron-based superconductors including CeFeAsO, BaFe2As2, NaFeAs, FeSe and undoped FeSe/SrTiO3 films with 1, 2 and 20 layers. While the electronic structure near tile Brillouin zone center F varies dramatically among different materials, the electronic structure near the Brillouin zone corners （M points）, as well as their temperature dependence, are rather similar. The electronic structure near the zone corners is dominated by the electronic nematicity that gives rise to a band splitting of the dxz and dyz bands below the nematie transition temperature. A clear relation is observed between the band splitting magnitude arid the onset temperature of nematicity. Our results may shed light on the origin of nematicity, its effect on the electronic structures, and its relation with superconductivity in the iron-based superconductors. 展开更多
关键词 of on as or by Common Electronic Features and Electronic Nematicity in Parent Compounds of Iron-Based Superconductors and FeSe/SrTiO3 Films Revealed by Angle-Resolved Photoemission Spectroscopy in ARPES As that
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Identification of Topological Surface State in PdTe2 Superconductor by Angle-Resolved Photoemission Spectroscopy 认领 引用 被引量：4
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作者 刘艳 赵建洲 +16 位作者 俞理 林成天 梁爱基 胡成 丁颖 徐煜 何少龙 赵林 刘国东 董晓莉 张君 陈创天 许祖彦 翁红明 戴希 方忠 周兴江 《Chinese Physics Letters》 SCIE EI CAS CSCD 2015年第6期136-140,共5页
High-resolution angle-resolved photoemission measurements are carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7K. Combined with theoretical calculations, we discover for th... High-resolution angle-resolved photoemission measurements are carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7K. Combined with theoretical calculations, we discover for the first time the existence of topologically nontrivial surface state with Dirac cone in PbTe2 superconductor. It is located at the Brillouin zone center and possesses helical spin texture. Distinct from the usual three-dimensional topological insulators where the Dirac cone of the surface state lies at the Fermi level, the Dirac point of the surface state in PdTe2 lies deeply below the Fermi level at - 1.75 eV binding energy and is well separated from the bulk states. The identification of topological surface state in PdTe2 superconductor deeply below the Fermi level provides a unique system to explore new phenomena and properties and opens a door for finding new topological materials in transition metal ehalcogenides. 展开更多
关键词 Identification of Topological Surface State in PdTe2 Superconductor by Angle-Resolved Photoemission Spectroscopy ARPES
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Femtosecond Time-Resolved Spectroscopic Photoemission Electron Microscopy for Probing Ultrafast Carrier Dynamics in Heterojunctions 认领 引用 被引量：2
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作者 Bo-han Li Guan-hua Zhang +6 位作者 Yu Liang Qun-qing Hao Ju-long Sun Chuan-yao Zhou You-tian Tao Xue-ming Yang Ze-feng Ren 《Chinese Journal of Chemical Physics》 SCIE EI CAS CSCD 2019年第4期399-405,I0002,共7页
The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal reso... The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal resolutions. Recently, we have successfully set up a timeresolved photoemission electron microscopy (TR-PEEM), which integrates the spectroscopic technique to measure electron densities at specific energy levels in space. This instrument provides us an unprecedented access to the evolution of electrons in terms of spatial location, time resolution, and energy, representing a new type of 4D spectro-microscopy. Here in this work, we present measurements of semiconductor performance with a time resolution of 184 fs, electron kinetic energy resolution of 150 meV, and spatial resolution of about 150 nm or better. We obtained time-resolved micro-area photoelectron spectra and energy-resolved TR-PEEM images on the Pb island on Si(111). These experimental results suggest that this instrument has the potential to be a powerful tool for investigating the carrier dynamics in various heterojunctions, which will deepen our understanding of semiconductor properties in the submicronanometer spatial scales and ultrafast time scales. 展开更多
关键词 Time resolution Photoemission electron microscopy Ultrafast carrier dynamics Photoelectron spectroscopy
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Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy 认领 引用 被引量：2
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作者 欧谷平 宋珍 +2 位作者 吴有余 陈小强 张福甲 《Chinese Physics B》 CAS 2006年第6期1296-1300,共5页
Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride （PTCDA）/indium-tin-oxide （ITO） thin films using atomic force microscopy, it has been found that the ... Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride （PTCDA）/indium-tin-oxide （ITO） thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy. At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes （OLEDs）. 展开更多
关键词 atomic force microscopy x-ray photoemission spectroscopy PTCDA/ITO
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Electronic structure of transition metal dichalcogenides PdTe_2 and Cu0.05PdTe_2 superconductors obtained by angle-resolved photoemission spectroscopy 认领 引用 被引量：1
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作者 刘艳 赵建洲 +21 位作者 俞理 林成天 胡成 刘德发 彭莹莹 谢卓晋 何俊峰 陈朝宇 冯娅 伊合绵 刘旭 赵林 何少龙 刘国东 董晓莉 张君 陈创天 许祖彦 翁虹明 戴希 方忠 周兴江 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期100-108,共9页
The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great atten... The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu- intercalated form, Cuo.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mecha- nism. Here we report systematic high resolution angle-resolved photoemission （ARPES） studies on PdTe2 and Cuo.05PdTe2 single crystals, combined with the band structure calculations. We present in detail for the first time the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cuo.05PdTe2. Our results lay a foundation for further exploration and investigation on PdTe2 and related superconductors. 展开更多
关键词 transition metal dichalcogenides PdTe2 superconductor photoemission
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Imaging Ultrafast Plasmon Dynamics within a Complex Dolmen Nanostructure Using Photoemission Electron Microscopy 认领 引用 被引量：1
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作者 秦将 郎鹏 +5 位作者 季博宇 N.K.Alemayehu 陶海岩 高勋 郝作强 林景全 《Chinese Physics Letters》 SCIE EI CAS CSCD 2016年第11期82-86,共5页
We report direct nanoscale imaging of ultrafast plasmon in a gold dolmen nanostructure excited with the 7is laser pulses by combining the interferometric time-resolved technology with the three-photon photoemission el... We report direct nanoscale imaging of ultrafast plasmon in a gold dolmen nanostructure excited with the 7is laser pulses by combining the interferometric time-resolved technology with the three-photon photoemission electron microscopy （PEEM）. The interferometric time-resolved traces show that the plasmon mode beating pattern appears at the ends of the dimer slabs in the dolmen nanostructure as a result of coherent superposition of multiple localized surface plasmon modes induced by broad bandwidth of the ultrafast laser pulses. The PEEM measurement further discloses that in-phase of the oscillation field of two neighbor defects are surprisingly observed, which is attributed to the plasmon coupling between them. Furthermore, the control of the temporal delay between the pump and probe laser pluses could be utilized for manipulation of the near-field distribution. These findings deepen our understanding of ultrafast plasmon dynamics in a complex nanosystem. 展开更多
关键词 of on as in Imaging Ultrafast Plasmon Dynamics within a Complex Dolmen Nanostructure Using Photoemission Electron Microscopy that ITR
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Probing of Ultrafast Plasmon Dynamics on Gold Bowtie Nanostructure Using Photoemission Electron Microscopy 认领 引用 被引量：2
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作者 秦将 季博宇 +1 位作者 郝作强 林景全 《Chinese Physics Letters》 SCIE EI CAS CSCD 2015年第6期61-65,共5页
We report the direct imaging of plasmon on the tips pulses and probing of ultrafast plasmon dynamics by of nano-prisms in a bowtie structure excited by 7 fs laser combining the pump-probe technology with three-photon ... We report the direct imaging of plasmon on the tips pulses and probing of ultrafast plasmon dynamics by of nano-prisms in a bowtie structure excited by 7 fs laser combining the pump-probe technology with three-photon photoemission electron microscopy. Different photoemission patterns induced by the plasmon effect are observed when the bowties are excited by s- and p-polarized femtosecond laser pulses. A series of images of the evolution of local surface plasmon modes on different tips of the bowtie are obtained by the time-resolved three-photon photoemission electron microscopy, and the result discloses that plasmon excitation is dominated by the interfer- ence of the pump and probe pulses within the first 13 fs of the delay time, and thereafter the individual plasmon starts to oscillate on its own characteristic resonant frequencies. 展开更多
关键词 Probing of Ultrafast Plasmon Dynamics on Gold Bowtie Nanostructure Using Photoemission Electron Microscopy LSP
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Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy 认领 引用 被引量：1
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作者 Chen-Lu Wang Yan Zhang +25 位作者 Jian-Wei Huang Guo-Dong Liu Ai-Ji Liang Yu-Xiao Zhang Bing Shen Jing Liu Cheng Hu Ying Ding De-Fa Liu Yong Hu Shao-Long He Lin Zhao Li Yu Jin Hu Jiang Wei Zhi-Qiang Mao You-Guo Shi Xiao-Wen Jia Feng-Feng Zhang Shen-Jin Zhang Feng Yang Zhi-Min Wang Qin-Jun Peng Zu-Yan Xu Chuang-Tian Chen Xing-Jiang Zhou 《Chinese Physics Letters》 SCIE EI CAS CSCD 2017年第9期100-104,共5页
WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-b... WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concen- tration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range,and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identify a fiat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a fiat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2. 展开更多
关键词 Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy ARPES
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RESONANT PHOTOEMISSION OF BULK CeO2 AND NANO-CeO2 FILMS 认领 引用 被引量：1
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作者 M.I. Abbas, K. Ibrahim, Z.Y. Wu, J. Zhang, F.Q. Liu and H.J. Qian 《Acta Metallurgica Sinica(English Letters)》 EI CAS 2001年第6期539-543,共5页
Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p b... Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p bands for nano film and bulk material have been observed. The variation of electron density of states in valance bands of nano and bulk structures of CeO2 is discussed in terms of Ce 4 d-4 f resonance. 展开更多
关键词 Nanostructured materials Optical films Oxides Photoemission Resonance
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INVESTIGATION ON THE VALENCE STATE OF Ce ATOMIN BULK AND NANOCRYSTAL CeO_2 BY X-RAY ABSORPTION ANDPHOTOEMISSION 认领 引用 被引量：1
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作者 K. Ibrahim, Z.Y. Wu, J. Zhang, M.I. Abbas, F.Q. Liu and H.J. Qian 《Acta Metallurgica Sinica(English Letters)》 EI CAS 2001年第6期511-516,共6页
Valence band photoemission spectra (PES) for both bulk and nanocrystal CeO2 have been measured on and off resonance of Ce 4d-4f absorption edge. The PES show that the bulk and nanocrystal CeO2 of diameter ranging from... Valence band photoemission spectra (PES) for both bulk and nanocrystal CeO2 have been measured on and off resonance of Ce 4d-4f absorption edge. The PES show that the bulk and nanocrystal CeO2 of diameter ranging from 8nm to 50nm exhibit a peak near Fermi edge with binding energy of about 1.8eV. The 1.8eV peak shows a strong dependence on excitation energy, although it looks like the contribution of Ce3+ ion following the data reported in literatures. However, according to the results of resonance photoemission and X-ray absorption spectra at 1s edge, this electronic structure may be associated to the intermediate state charge transfer effects. 展开更多
关键词 rare earth oxide photoemission electronic structure photoabsorption
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Photoemission cross section:A critical parameter in the impurity photovoltaic effect 认领 引用
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作者 Jiren Yuan Haibin Huang +4 位作者 Xinhua Deng Zhihao Yue Yuping He Naigen Zhou Lang Zhou 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第1期552-556,共5页
A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic（IPV） effect for silicon solar cells doped with indium. The photovoltaic parameters（short-circuit... A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic（IPV） effect for silicon solar cells doped with indium. The photovoltaic parameters（short-circuit current density, opencircuit voltage, and conversion efficiency） of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is 10^-20cm^2, the conversion efficiencyη of the IPV cell always has a negative gain（△η 0） if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small（large） hole photoemission cross section and large（small） electron photoemission cross section,whose energy levels are near the valence（or conduction） band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections. 展开更多
关键词 solar cell impurity photovoltaic effect photoemission cross section conversion efficiency
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Intrinsic electronic structure and nodeless superconducting gap of YBa2Cu3O7-σ observed by spatially-resolved laser-based angle resolved photoemission spectroscopy 认领 引用
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作者 李帅帅 苗泰民 +17 位作者 殷超辉 李颖昊 闫宏涛 陈逸雯 梁波 陈浩 朱文培 张申金 王志敏 张丰丰 杨峰 彭钦军 林成天 毛寒青 刘国东 许祖彦 赵林 周兴江 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第11期263-268,共6页
The spatially-resolved laser-based high-resolution angle resolved photoemission spectroscopy(ARPES) measurements have been performed on the optimally-doped YBa2Cu3O7-σ(Y123) superconductor. For the first tim... The spatially-resolved laser-based high-resolution angle resolved photoemission spectroscopy(ARPES) measurements have been performed on the optimally-doped YBa2Cu3O7-σ(Y123) superconductor. For the first time, we found the region from the cleaved surface that reveals clear bulk electronic properties. The intrinsic Fermi surface and band structures of Y123 were observed. The Fermi surface-dependent and momentum-dependent superconducting gap was determined which is nodeless and consistent with the d+is gap form. 展开更多
关键词 YBCO angle resolved photoemission spectroscopy electronic structure superconducting gap
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Theory of multiphoton photoemission disclosing excited states in conduction band of individual TiO2 nanoparticles 认领 引用
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作者 Bochao Li Hao Li +3 位作者 Chang Yang Boyu Ji Jingquan Lin Toshihisa Tomie 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第11期69-75,共7页
A theory of multiphoton photoemission is derived to explain the experimentally observed monotonic decrease with the wavelength in the electron yield of TiO2 nanoparticles(NPs)by as large as four orders of magnitude... A theory of multiphoton photoemission is derived to explain the experimentally observed monotonic decrease with the wavelength in the electron yield of TiO2 nanoparticles(NPs)by as large as four orders of magnitude.It is found that the fitting parameter corresponds to the energy position of Ti3d eg and t2g states,and the derived theory is a novel diagnostic of excited states in the conduction band,very importantly,applicable to individual NPs.The difference between four-photon slope NPs and three-photon slope NPs is attributed to the difference in defect density.The success of the theory in solving the puzzling result shows that thermal emission from high-lying levels may dominate over direct multiphoton ionization in solids when the photon number larger than four is required. 展开更多
关键词 multiphoton photoemission nanoparticles thermal emission TiO2
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Visualizing the electronic structure of kagome magnet LuMn6Sn6 by angle-resolved photoemission spectroscopy 认领 引用
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作者 Man Li Qi Wang +9 位作者 Liqin Zhou Wenhua Song Huan Ma Pengfei Ding Alexander Fedorov Yaobo Huang Bernd Büchner Hechang Lei Shancai Wang Rui Lou 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第11期112-117,共6页
Searching for the dispersionless flat band(FB)in quantum materials,especially in topological systems,becomes an interesting topic.The kagome lattice is an ideal platform for such exploration because the FB can be natu... Searching for the dispersionless flat band(FB)in quantum materials,especially in topological systems,becomes an interesting topic.The kagome lattice is an ideal platform for such exploration because the FB can be naturally induced by the underlying destructive interference.Nevertheless,the magnetic kagome system that hosts the FB close to the Fermi level(EF)is exceptionally rare.Here,we study the electronic structure of a kagome magnet LuMn6Sn6 by combining angleresolved photoemission spectroscopy and density functional theory calculations.The observed Fermi-surface topology and overall band dispersions are similar to previous studies of the XMn6Sn6(X=Dy,Tb,Gd,Y)family of compounds.We clearly observe two kagome-derived FBs extending through the entire Brillouin zone,and one of them is located just below EF.The photon-energy-dependent measurements reveal that these FBs are nearly dispersionless along the kz direction as well,supporting the quasi-two-dimensional character of such FBs.Our results complement the XMn6Sn6 family and demonstrate the robustness of the FB features across this family. 展开更多
关键词 flat band kagome magnet angle-resolved photoemission spectroscopy
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Negligible normal fluid in superconducting state of heavily overdoped Bi2Sr2CaCu2O8+δ detected by ultra-low temperature angle-resolved photoemission spectroscopy 认领 引用
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作者 殷超辉 汪清泓 +23 位作者 解于洋 陈逸雯 刘俊豪 杨鉴刚 贾俊杰 张杏 吕文凯 闫宏涛 戎洪涛 张申金 王志敏 宗楠 刘丽娟 李如康 王晓洋 张丰丰 杨峰 彭钦军 许祖彦 刘国东 毛寒青 赵林 李昕彤 周兴江 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第7期562-567,共6页
In high temperature cuprate superconductors,it was found that the superfluid density decreases with the increase of hole doping.One natural question is whether there exists normal fluid in the superconducting state in... In high temperature cuprate superconductors,it was found that the superfluid density decreases with the increase of hole doping.One natural question is whether there exists normal fluid in the superconducting state in the overdoped region.In this paper,we have carried out high-resolution ultra-low temperature laser-based angle-resolved photoemission measurements on a heavily overdoped Bi2212 sample with a Tc of 48 K.We find that this heavily overdoped Bi2212 remains in the strong coupling regime with 2Δ0/(kBTc)=5.8.The single-particle scattering rate is very small along the nodal direction(~5 meV) and increases as the momentum moves from the nodal to the antinodal regions.A hard superconducting gap opening is observed near the antinodal region with the spectral weight at the Fermi level fully suppressed to zero.The normal fluid is found to be negligibly small in the superconducting state of this heavily overdoped Bi2212.These results provide key information to understand the high Tc mechanism in the cuprate superconductors. 展开更多
关键词 cuprate superconductor angle-resolved photoemission spectroscopy electronic structure
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