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Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment 认领 引用 被引量：4
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作者 Depeng Li Jingrui Ma +8 位作者 Wenbo Liu Guohong Xiang Xiangwei Qu Siqi Jia Mi Gu Jiahao Wei Pai Liu Kai Wang Xiaowei Sun 《Journal of Semiconductors》 EI CAS CSCD 2023年第9期68-74,共7页
The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coa... The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coating of the HTL.The lack of compatibility between the HTL’s solvent and the QD layer results in an uneven surface,which negatively impacts the overall device performance.In this work,we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent.The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V,a high maximum luminance of 105500 cd/m2,and a remarkable maximum external quantum efficiency of 13.34%.This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs. 展开更多
关键词 quantum dots quantum-dot light-emitting diodes inverted structure ligand treatment
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Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB 认领 引用 被引量：2
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作者 Hong Wang Zunren Lv +6 位作者 Shuai Wang Haomiao Wang Hongyu Chai Xiaoguang Yang Lei Meng Chen Ji Tao Yang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第9期570-574,共5页
We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the ... We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging. 展开更多
关键词 chirped quantum-dot superluminescent diodes direct Si doping
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Wide color gamut switchable autostereoscopic 3D display based on directional quantum-dot backlight 认领 引用 被引量：2
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作者 Bin Xu Xue-Ling Li Yuan-Qing Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第12期191-201,共11页
A switchable autostereoscopic 3-dimensional(3D) display device with wide color gamut is introduced in this paper. In conjunction with a novel directional quantum-dot(QD) backlight, the precise scanning control strateg... A switchable autostereoscopic 3-dimensional(3D) display device with wide color gamut is introduced in this paper. In conjunction with a novel directional quantum-dot(QD) backlight, the precise scanning control strategy, and the eye-tracking system, this spatial-sequential solution enables our autostereoscopic display to combine all the advantages of full resolution,wide color gamut, low crosstalk, and switchable 2D/3D. And also, we fabricated an autostereoscopic display prototype and demonstrated its performances effectively. The results indicate that our system can both break the limitation of viewing position and provide high-quality 3D images. We present two working modes in this system. In the spatial-sequential mode,the crosstalk is about 6%. In the time-multiplexed mode, the viewer should wear auxiliary and the crosstalk is about 1%,just next to that of a commercial 3D display(BENQ XL2707-B and View Sonic VX2268 WM). Additionally, our system is also completely compatible with active shutter glasses and its 3D resolution is same as its 2D resolution. Because of the excellent properties of the QD material, the color gamut can be widely extended to 77.98% according to the ITU-R recommendation BT.2020(Rec.2020). 展开更多
关键词 three-dimensional(3D) display directional and scanning quantum-dot backlight color gamut full resolution
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A new phenomenon of quantum-dot cellular automata 认领 引用 被引量：1
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作者 曾令刚 王庆康 戴永兵 《Journal of Zhejiang University-SCIENCE A》 CAS 2005年第10期1090-1094,共5页
If an external point charge and the movable charges of an isolated quantum-dot cellular automata (QCA) cell have the same polarity, the point charge greatly affects the polarization (P) of the cell only when it is in ... If an external point charge and the movable charges of an isolated quantum-dot cellular automata (QCA) cell have the same polarity, the point charge greatly affects the polarization (P) of the cell only when it is in a narrow band with periodically changing width. The center of the band is on a radius R circle. The ratio of R to the electric charge (q) is a constant determined by the parameters of the cell. A QCA cell can be used as charge detector based on the above phenomenon. 展开更多
关键词 Quantum-dot cellular automata （QCA） Quantum dot Hubbard-type Hamiltonian
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Quantum-Dot Spin-Based Secret Sharing in an Optical Microcavity 认领 引用
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作者 张英俏 张寿 +1 位作者 YEON Kyu-Hwang YU Seong-Cho 《Communications in Theoretical Physics》 SCIE CAS 2010年第12期1049-1053,共5页
Two schemes of quantum secret sharing are proposed via single electron spin confined in charged QDs inside a single-sided microcavity and a double-sided microcavity, respectively. Both schemes rely on coherent photons... Two schemes of quantum secret sharing are proposed via single electron spin confined in charged QDs inside a single-sided microcavity and a double-sided microcavity, respectively. Both schemes rely on coherent photonspin interaction. The two schemes axe both deterministic and can be extended to multipartite secret sharing. 展开更多
关键词 secret sharing quantum-dot spin single-sided microcavity double-sided microcavity
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Optimal and robust control of population transfer in asymmetric quantum-dot molecules 认领 引用
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作者 郭裕 马松山 束传存 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第2期353-359,共7页
We present an optimal and robust quantum control method for efficient population transfer in asymmetric double quantum-dot molecules.We derive a long-duration control scheme that allows for highly efficient population... We present an optimal and robust quantum control method for efficient population transfer in asymmetric double quantum-dot molecules.We derive a long-duration control scheme that allows for highly efficient population transfer by accurately controlling the amplitude of a narrow-bandwidth pulse.To overcome fluctuations in control field parameters,we employ a frequency-domain quantum optimal control theory method to optimize the spectral phase of a single pulse with broad bandwidth while preserving the spectral amplitude.It is shown that this spectral-phase-only optimization approach can successfully identify robust and optimal control fields,leading to efficient population transfer to the target state while concurrently suppressing population transfer to undesired states.The method demonstrates resilience to fluctuations in control field parameters,making it a promising approach for reliable and efficient population transfer in practical applications. 展开更多
关键词 population transfer quantum optimal control theory quantum-dot molecules
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Effect of Intra-Dot Coulomb Interaction on Andreev Reflection in Normal-Metal/Quantum-Dot/Superconductor System 认领 引用
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作者 ZHU Yu SUN Qing-Feng LIN Tsung-Han 《Communications in Theoretical Physics》 SCIE CAS 2001年第7期101-108,共8页
We investigate the effect of intra-dot Coulomb interaction on the Andreev reflection in a normalmetal/quantum-dot/superconductor (N-QD-S) system with multiple levels in the quantum dot, in the regime where the intra-d... We investigate the effect of intra-dot Coulomb interaction on the Andreev reflection in a normalmetal/quantum-dot/superconductor (N-QD-S) system with multiple levels in the quantum dot, in the regime where the intra-dot interacting constant is comparable to the energy gap of superconducting lead. By using nonequilibrium Green function method, the averaged occupation of electrons in the quantum dot and the Andreev reflection (AR) current are studied. Comparing to the case of non-interacting quantum dot, the system shows significant changes for the a two-step-like behavior; and the I-Vg shows two groups of peaks, separated by U and with equal heights, where Vg is the gate voltage and U denotes the intra-dot Coulomb interaction constant. (ii) For finite bias voltage, dips, superposed V ≥ U/2, extra AR current peaks occur between the two groups of the peaks. Besides, the properties of the heights of the AR current peaks are more complicated. 展开更多
关键词 Coulomb interactions, Andreev reflection, normal-metal/quantum-dot/superconductor system
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Andreev Tunneling Through a Ferromagnet/Quantum-Dot/Superconductor System 认领 引用
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作者 RAO Hong-Hu ZHU Yu LIN Tsung-Han 《Communications in Theoretical Physics》 SCIE CAS 2002年第11期629-633,共5页
We study Andreev tunneling through a ferromagnet/quantum-dot (QD)/superconductor system. By usingnonequilibrum Green function method, the averaged occupation of electrons in QD and the Andreev tunneling currentare stu... We study Andreev tunneling through a ferromagnet/quantum-dot (QD)/superconductor system. By usingnonequilibrum Green function method, the averaged occupation of electrons in QD and the Andreev tunneling currentare studied. Comparing to the norma-metal/quantum-dot/superconductor, the system shows significant changes: (i)The averaged occupations of spin-up and spin-down electrons are not equal. (ii) With the increase of the polarizationof ferromagnetic lead, the Andreev reflection current decreases. (iii) However, even the ferromagnetic lead reaches fullpolarization, the averaged occupation of spin-down electrons is not zero. The physics of these changes is discussed. 展开更多
关键词 Andreev tunneling, ferromagnet/quantum-dot/superconductor system
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Analytical Result on the Supercurrent Through a Superconductor/Quantum-Dot/Superconductor Junction 认领 引用
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作者 LI Wei ZHU Yu LIN Tsung-Han 《Communications in Theoretical Physics》 SCIE CAS 2002年第7期103-106,共4页
We present an analytical result for the supercurrent across a superconductor/quantum-dot/superconductor junction. By converting the current integration into a special contour integral, we can express the current as a ... We present an analytical result for the supercurrent across a superconductor/quantum-dot/superconductor junction. By converting the current integration into a special contour integral, we can express the current as a sum of the residues of poles. These poles are real and give a natural definition of the Andreev bound states. We also use the exact result to explain some features of the supercurrent transport behavior. 展开更多
关键词 supercurrent, superconductor/quantum-dot/superconductor junction
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Quantum-dot Semiconductor Optical Amplifiers in State Space Model 认领 引用 被引量：1
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作者 Hussein Taleb Kambiz Abedi Saeed Golmohammadi 《计算物理》 CSCD 北大核心 2013年第4期605-612,共8页
A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along ... A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy. 展开更多
关键词 quantum-dot rate equation model semiconductor optical amplifiers state space model
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Phase Control of Transient Optical Properties of Double Coupled Quantum-Dot Nanostructure via Gaussian Laser Beams 认领 引用 被引量：1
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作者 J.Shiri F.Shahi +1 位作者 M.R.Mehmannavaz L.Shahrassai 《Chinese Physics Letters》 SCIE EI CAS CSCD 2018年第2期29-33,共5页
We theoretically analyze the transient properties of a probe field absorption and dispersion in a coupled semiconductor double-quantum-dot nanostructure.We show that in the presence of the Gaussian laser beams,absorpt... We theoretically analyze the transient properties of a probe field absorption and dispersion in a coupled semiconductor double-quantum-dot nanostructure.We show that in the presence of the Gaussian laser beams,absorption and dispersion of the probe field can be dramatically influenced by the relative phase between applied fields and intensity of the Gaussian laser beams.Transient and steady-state behaviors of the probe field absorption and dispersion are discussed to estimate the required switching time.The estimated range is between 5-8 ps for subluminal to superluminal light propagation. 展开更多
关键词 Phase Control of Transient Optical Properties of Double Coupled Quantum-Dot Nanostructure via Gaussian Laser Beams QDs
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Enhanced photocatalytic activity of quantum-dot-sensitized one-dimensionally-ordered ZnO nanorod photocatalyst 认领 引用 被引量：5
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作者 Jinzhao Huang Song Liu +4 位作者 Lei Kuang Yongdan Zhao Tao Jiang Shiyou Liu Xijin Xu 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2013年第12期2487-2491,共5页
An efficient photocatalyst was fabricated by assembling quantum dots （QDs） onto one-dimensionally-ordered ZnO nanorods, and the photocatalytic properties for Methyl Orange degradation were investigated by scanning e... An efficient photocatalyst was fabricated by assembling quantum dots （QDs） onto one-dimensionally-ordered ZnO nanorods, and the photocatalytic properties for Methyl Orange degradation were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, UV-Vis-NIR absorption spectroscopy and photoluminescence. The results indicate that the catalyst with assembled QDs is more favorable for the degradation than the pristine ZnO nanorods. The QDs with core-shell structure lower the photocatalytic ability due to the higher carder transport barrier of the ZnS shell layer. Besides its degradation efficiency, the photocatalyst has several advantages given that the one-dimensionally-ordered ZnO nanorods have been grown directly on indium tin oxide substrates. The article provides a new method to design an effective and easily recyclable photocatalyst. 展开更多
关键词 quantum dots one-dimensionally-ordered ZnO nanorods photocatalyst
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InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration 认领 引用 被引量：4
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作者 李新坤 金鹏 +2 位作者 梁德春 吴巨 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第4期523-526,共4页
With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer co... With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained. 展开更多
关键词 quantum dot submonolayer self-assembled superluminescent diode
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Single-Bit Comparator in Quantum-Dot Cellular Automata (QCA) Technology Using Novel QCAXNOR Gates 认领 引用
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作者 Ali Hussien Majeed Mohd Shamian Zainal +1 位作者 Esam Alkaldy Danial Md.NorNor 《Journal of Electronic Science and Technology》 EI CAS CSCD 2021年第3期263-273,共11页
To fill the continuous needs for faster processing elements with less power consumption causes large pressure on the complementary metal oxide semiconductor(CMOS)technology developers.The scaling scenario is not an op... To fill the continuous needs for faster processing elements with less power consumption causes large pressure on the complementary metal oxide semiconductor(CMOS)technology developers.The scaling scenario is not an option nowadays and other technologies need to be investigated.The quantum-dot cellular automata(QCA)technology is one of the important emerging nanotechnologies that have attracted much researchers’attention in recent years.This technology has many interesting features,such as high speed,low power consumption,and small size.These features make it an appropriate alternative to the CMOS technique.This paper suggests three novel structures of XNOR gates in the QCA technology.The presented structures do not follow the conventional approaches to the logic gates design but depend on the inherent capabilities of the new technology.The proposed structures are used as the main building blocks for a single-bit comparator.The resulted circuits are simulated for the verification purpose and then compared with existing counterparts in the literature.The comparison results are encouraging to append the proposed structures to the library of QCA gates. 展开更多
关键词 Nanotechnology quantum-dot cellular automata(QCA) QCA comparator XNOR gate XOR gate
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Carrier transport in III–V quantum-dot structures for solar cells or photodetectors 认领 引用 被引量：2
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作者 王文奇 王禄 +9 位作者 江洋 马紫光 孙令 刘洁 孙庆灵 赵斌 王文新 刘伍明 贾海强 陈弘 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第9期174-179,共6页
According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which... According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors. 展开更多
关键词 quantum dots electronic transport p–n junctions photoluminescence
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Enhanced transient photovoltaic characteristics of core–shell ZnSe/ZnS/L-Cys quantum-dot-sensitized TiO_2 thin-film 认领 引用 被引量：1
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作者 Kui-Ying Li Lun Ren Tong-De Shen 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第6期415-423,共9页
Photoanodic properties greatly determine the overall performance of quantum-dot-sensitized solar cells（QDSCs）. In the present report, the microdynamic behaviors of carriers in the nanocomposite thin-film, a Zn Se QD... Photoanodic properties greatly determine the overall performance of quantum-dot-sensitized solar cells（QDSCs）. In the present report, the microdynamic behaviors of carriers in the nanocomposite thin-film, a Zn Se QD-sensitized mesoporous La-doped nano-TiO2 thin-film, as a potential candidate for photoanode, are probed via nanosecond transient photovoltaic（TPV） spectroscopy. The results confirm that the L-Cys ligand has a dual function serving as a stabilizer and molecular linker. Large quantities of interface states are located at the energy level with a photoelectric threshold of1.58 eV and a quantum well（QW） depth of 0.67 eV. This QW depth is approximately 0.14 eV deeper than the depth of QW buried in the Zn Se QDs, and a deeper QW results in a higher quantum confinement energy. A strong quantum confinement effect of the interface state may be responsible for the excellent TPV characteristics of the photoanode. For example, the peak intensity of the TPV response of the QD-sensitized thin-film lasts a long time, from 9.40 × 10^（-7） s to 2.96 × 10^（-4） s,and the end time of the PTV response of the QD-sensitized thin-film is extended by approximately an order of magnitude compared with those of the TiO2 substrate and the QDs. The TPV characteristics of the QD-sensitized thin-film change from p-type to n-type for the QDs before and after sensitizing. These properties strongly depend on the extended diffusion length of the photogenerated carries and the reduced recombination rate of photogenerated electron-hole pairs, resulting in prolonged carrier lifetime and an increased level of electron injection into the TiO2 thin-film substrate. 展开更多
关键词 sensitization core-shell ZnSe quantum dots mesoporous Ti02 thin-film time-resolution photo- voltage
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Analytical method for cell displacement defect quantum-dot cellular automata primitive 认领 引用
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作者 Vaishali Dhare Usha Mehta 《Journal of Electronic Science and Technology》 EI CAS CSCD 2023年第1期26-34,共9页
Quantum-dot cellular automata(QCA)is an emerging computational paradigm which can overcome scaling limitations of the existing complementary metal oxide semiconductor(CMOS)technology.The existence of defects cannot be... Quantum-dot cellular automata(QCA)is an emerging computational paradigm which can overcome scaling limitations of the existing complementary metal oxide semiconductor(CMOS)technology.The existence of defects cannot be ignored,considering the fabrication of QCA devices at the molecular level where it could alter the functionality.Therefore,defects in QCA devices need to be analyzed.So far,the simulation-based displacement defect analysis has been presented in the literature,which results in an increased demand in the corresponding mathematical model.In this paper,the displacement defect analysis of the QCA main primitive,majority voter(MV),is presented and carried out both in simulation and mathematics,where the kink energy based mathematical model is applied.The results demonstrate that this model is valid for the displacement defect in QCA MV. 展开更多
关键词 Displacement defect Kink energy Majority voter(MV) Quantum-dot cellular automata (QCA)
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Pure spin polarized transport based on Rashba spin orbit interaction through the Aharonov Bohm interferometer embodied four-quantum-dot ring 认领 引用 被引量：1
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作者 吴丽君 韩宇 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第4期420-428,共9页
The spin-polarized linear conductance spectrum and current–voltage characteristics in a four-quantum-dot ring embodied into Aharonov–Bohm （AB） interferometer are investigated theoretically by considering a local R... The spin-polarized linear conductance spectrum and current–voltage characteristics in a four-quantum-dot ring embodied into Aharonov–Bohm （AB） interferometer are investigated theoretically by considering a local Rashba spin–orbit interaction. It shows that the spin-polarized linear conductance and the corresponding spin polarization are each a function of magnetic flux phase at zero bias voltage with a period of 2π, and that Hubbard U cannot influence the electron transport properties in this case. When adjusting appropriately the structural parameter of inter-dot coupling and dot-lead coupling strength, the electronic spin polarization can reach a maximum value. Furthermore, by adjusting the bias voltages applied to the leads, the spin-up and spin-down currents move in opposite directions and pure spin current exists in the configuration space in appropriate situations. Based on the numerical results, such a model can be applied to the design of a spin filter device. 展开更多
关键词 quantum dot ring Rashba spin–orbit interaction spin-polarized transport ＂bound states in the continuum＂ phenomena bias voltage Aharonov–Bohm interferometer
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Controllable Tunneling of Light through a Quantum-Dot-Molecule Dielectric Film via Electromagnetically Induced Transparency 认领 引用
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作者 Ruixi Zeng Jing Gu Jianqi Shen 《Optics and Photonics Journal》 2017年第8期49-67,共19页
Since discrete multilevel transitions of quantum-dot molecules driven by external electromagnetic fields can exhibit quantum coherence effects, such an optical characteristic can be utilized to control propagation of ... Since discrete multilevel transitions of quantum-dot molecules driven by external electromagnetic fields can exhibit quantum coherence effects, such an optical characteristic can be utilized to control propagation of electromagnetic wave through a quantum-dot molecule dielectric film. Since inner-dot tunneling in quantum-dot molecules can be controlled by a gate voltage, destructive quantum coherence among multilevel transitions in quantum-dot molecule would give rise to EIT (electromagnetically induced transparency). In this report, we shall investigate controllable on- and off-resonance tunneling effects of an incident electromagnetic wave through such a quan-tum-dot-molecule dielectric film, of which the optical response is tuned by the switchable gate voltage. We have found from the theoretical mechanism that a high gate voltage can cause the EIT phenomenon of quan-tum-dot-molecule systems, and under the condition of on-resonance light tunneling through the thin film, the probe field will propagation without loss if the probe frequency detuning is zero. By taking advantage of these effects sensitive to the tunable gate voltage, such quantum coherence would be inte-grated in certain photonic structures, and some devices such as photonic switching and transistors can be designed. Transient evolution of optical characteristics in the quantum-dot-molecule dielectric film (once the tunable gate voltage is turned on or off) is also considered in this report. 展开更多
关键词 Resonant Tunneling Quantum-Dot Molecules Quantum Coherence Controllable Transmission
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Quantum transport through a multi-quantum-dot-pair chain side-coupled with Majorana bound states 认领 引用
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作者 江兆潭 仲成成 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第6期474-482,共9页
We investigate the quantum transport properties through a special kind of quantum dot（QD） system composed of a serially coupled multi-QD-pair（multi-QDP） chain and side-coupled Majorana bound states（MBSs） by usin... We investigate the quantum transport properties through a special kind of quantum dot（QD） system composed of a serially coupled multi-QD-pair（multi-QDP） chain and side-coupled Majorana bound states（MBSs） by using the Green functions method,where the conductance can be classified into two kinds：the electron tunneling（ET） conductance and the Andreev reflection（AR） one.First we find that for the nonzero MBS-QDP coupling a sharp AR-induced zero-bias conductance peak with the height of e^2/h is present（or absent） when the MBS is coupled to the far left（or the other） QDP.Moreover,the MBS-QDP coupling can suppress the ET conductance and strengthen the AR one,and further split into two sub-peaks each of the total conductance peaks of the isolated multi-QDPs,indicating that the MBS will make obvious influences on the competition between the ET and AR processes.Then we find that the tunneling rate ΓLis able to affect the conductances of leads L and R in different ways,demonstrating that there exists a ΓL-related competition between the AR and ET processes.Finally we consider the effect of the inter-MBS coupling on the conductances of the multi-QDP chains and it is shown that the inter-MBS coupling will split the zero-bias conductance peak with the height of e^2/h into two sub-peaks.As the inter-MBS coupling becomes stronger,the two sub-peaks are pushed away from each other and simultaneously become lower,which is opposite to that of the single QDP chain where the two sub-peaks with the height of about e^2/2h become higher.Also,the decay of the conductance sub-peaks with the increase of the MBS-QDP coupling becomes slower as the number of the QDPs becomes larger.This research should be an important extension in studying the transport properties in the kind of QD systems coupled with the side MBSs,which is helpful for understanding the nature of the MBSs,as well as the MBS-related QD transport properties. 展开更多
关键词 electron transport quantum dot Andreev reflection
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