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Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase 认领 引用 被引量：1
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作者 Wen Di Zhang Bing Li +3 位作者 Wei Wei Wang Xing Ya Wang Yan Cheng An Quan Jiang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2026年第1期144-153,共10页
Innovative use of HfO2-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received wides... Innovative use of HfO2-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf0.5Zr0.5O2 thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm−2 at an operating voltageime of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future. 展开更多
关键词 Hf0.5Zr0.5O2thin film Ultrahigh dielectric permittivity Near-edge plasma treatment Oxygen vacancy Charge storage
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In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2(M=Co,Ni)thin film for field-effect transistor-based glucose biosensor 认领 引用 被引量：1
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作者 Pengwei Tan Shuyang Shen +1 位作者 Yuanyuan Luo Guotao Duan 《Chinese Chemical Letters》 SCIE CAS CSCD 2026年第4期461-466,共6页
The integration of advanced sensing materials as channel layers in devices is essential for constructing field-effect transistor(FET)biosensors.In this study,we synthesized high-crystallinity bimetallic M3(hexaamin... The integration of advanced sensing materials as channel layers in devices is essential for constructing field-effect transistor(FET)biosensors.In this study,we synthesized high-crystallinity bimetallic M3(hexaaminotriphenylene)2(M=Co,Ni)thin films as FET channel materials via an in-situ growth method using a mixed solvent system of water and N,N-dimethylformamide(DMF).This bimetallic metalorganic framework(MOF)-based FET then served as a glucose biosensor,achieving a high sensitivity and an ultra-wide detection range from 10 nmol/L to 10 mmol/L.Further studies reveal that the success of in-situ growth of the high-crystalline bimetallic MOF film can be attributed to the coordination solvent exchange reaction between the metal atomic center,DMF,and water.Furthermore,the introduction of bimetallic centers enhances the number of active sites within the MOF,thereby achieving an ultra-low detection limit and an ultra-wide detection range.This work presents a versatile approach for constructing high performance FET biosensors. 展开更多
关键词 M3(hexaaminotriphenylene)2(M=Co Ni)thin film Metal-organic framework(MOF) Field-effect transistor(FET) Glucose biosensors In-situ growth
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A Eu-based metal-organic framework fluorescent film:Preparation and sensing of Cr2O72- and tryptamine 认领 引用
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作者 JIAO Xinyi ZHANG Xin +5 位作者 BAI Wanqiao SUN Xuehua CUI Huali REN Yixia CHAI Hongmei GAO Loujun 《无机化学学报》 SCIE CAS CSCD 北大核心 2026年第5期1113-1120,共8页
To address the challenges of poor solubility and difficult recyclability of powdered metal-organic frameworks(MOFs),a Eu-based MOF complex,[EuNa(L)(H2O)3]·2H2O(Eu/Na-MOF),was synthesized by the hydrother... To address the challenges of poor solubility and difficult recyclability of powdered metal-organic frameworks(MOFs),a Eu-based MOF complex,[EuNa(L)(H2O)3]·2H2O(Eu/Na-MOF),was synthesized by the hydrothermal method using 3,5-bis(3,5-dicarboxyphenyl)-1H-1,2,4-triazole(H4L)as the ligand in this study.Systematic characterization and performance evaluation revealed that the complex exhibits a unique 3D structure,high phase purity,excellent thermal stability,and outstanding luminescent properties.Furthermore,the complex was encapsulated in poly(methyl methacrylate)(PMMA)to fabricate a flexible and water-washable composite fluorescent film(Eu/NaMOF/PMMA).Based on static and dynamic quenching mechanisms,respectively,the film enables reversible detection of tryptamine and Cr2O72- ions in aqueous solutions,demonstrating high selectivity,stability,and portability. 展开更多
关键词 metal-organic framework Eu/Na-MOF fluorescent film sensor tryptamine Cr2O72-
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Enhancing photocatalytic CO2reduction with Z-scheme heterojunction Ag/Bi2MoO6/BiOBr composite films:Synthesis and mechanistic insights 认领 引用
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作者 LI Jiao ZHAO Jing +3 位作者 WANG Yiming ZHAO Wenhai CHAI Yizhuo ZHANG Xiaochao 《燃料化学学报（中英文）》 EI CAS CSCD 北大核心 2026年第4期140-150,共11页
This study presents the successful synthesis of a novel Z-scheme heterojunction composite film consisting of Ag/Bi2MoO6/BiOBr through electrochemical processes and ionexchange techniques,followed by the photodep... This study presents the successful synthesis of a novel Z-scheme heterojunction composite film consisting of Ag/Bi2MoO6/BiOBr through electrochemical processes and ionexchange techniques,followed by the photodeposition of noble metal silver(Ag)onto the composite structure.The catalytic efficiency of semiconductor photocatalysts is greatly improved by utilizing the localized surface plasmon resonance(LSPR)effect observed in Ag nanoparticles(NPs).Furthermore,the noble metal Ag serves as an intermediary bridge facilitating charge transfer between Bi2MoO6and BiOBr,while the formation of a Schottky barrier effectively inhibits the recombination of photo-generated electron-hole pairs.As a result,the Ag-deposited Bi2MoO6/BiOBr film exhibits superior photocatalytic performance in the reduction of CO2compared to its unmodified counterpart.Our experimental results indicate a non-linear relationship between Ag deposition and the efficiency of photocatalytic CO2reduction to CO,characterized by an initial increase in efficiency followed by a decline.The optimized 1.5%-Ag/Bi2MoO6/BiOBr film demonstrates exceptional photocatalytic activity,attaining a CO production rate of 13.65μmol/(g·h).This research explores the fundamental mechanisms that lead to improved photocatalytic CO2reduction capabilities of the Ag/Bi2MoO6/BiOBr film.Our research offers important perspectives for the thoughtful design and production of highly efficient photocatalysts,which are essential for advancing sustainable energy solutions. 展开更多
关键词 photocatalytic CO2reduction Ag NPs Bi2MoO6/BiOBr composite film Z-scheme heterojunction in situ synthesis
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The milder synthesis and highly-efficient purification of tetrakis(dimethylamino)titanium with ultrahigh-purity for wafer-scale TiO2 film under atomic layer deposition 认领 引用
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作者 Wenjian Xu Zhen Zhang +4 位作者 Yi Lin Jingjing Chen Peipei He Haohong Li Huidong Zheng 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2026年第4期1-10,共10页
The rapid development of semi-conductor industry calls for the production of organometallic precursors with ultrahigh-purity and low cost.TiO2 film is an important high-k materials,but its atomic layer deposition(A... The rapid development of semi-conductor industry calls for the production of organometallic precursors with ultrahigh-purity and low cost.TiO2 film is an important high-k materials,but its atomic layer deposition(ALD)precursor tetrakis(dimethylamino)titanium(TDMAT)still suffers from low industrial synthesis yield and inadequate purity.Herein,by optimizing the lithium displacement method in TDMAT synthesis,much milder synthesis conditions have been achieved with higher yield(91.00%)and ultra-high organic purity(>99.9%).In the purification optimization,a new coupled process combining alkali metal salt and rectification was proposed,based on which ultra-high inorganic purity(99.99993%,Cl-content<10-5,6N)and high TDMAT yield(93.70%)can be obtained.Finally,by using the assynthesized precursor,wafer-scale TiO2 film under ALD process has been fabricated,which was characterized by SEM,EDS,AFM,XPS and spectral ellipsometry(SE).Specially,AFM validates its ultrasmooth surface without any extra holes or agglomerations(RMS:0.303 nm).This work will be significant for the development of ultrahigh-purity semi-conductor materials. 展开更多
关键词 Atomic layer deposition Organometallic precursor Tetrakis(dimethylamino)titanium TiO2thin film Synthesis/purification optimization
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Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO2passivation 认领 引用
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作者 Tingrui Huang Jie Cao +7 位作者 Zuoxu Yu Yuzhen Zhang Wenting Xu Xifeng Li Cong Peng Weifeng Sun Guangan Yang Wangran Wu 《Journal of Semiconductors》 EI CAS CSCD 2026年第2期15-21,共7页
In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO2via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(tch=4,5... In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO2via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(tch=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔVth)and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO2passivation layer.Overall,the ITO TFT with the tchof 6 nm and with SiO2passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production. 展开更多
关键词 thin film transistor reliability InSnO SiO2
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Comparative enhancement of H+ and OH- treatment on electromagnetic interference shielding in aligned and compact Ti3C2Tx MXene film 认领 引用 被引量：7
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作者 Zhao-Yang Li Wei-Jun Zhao +3 位作者 Yu Sun Bing Zhou Yue-Zhan Feng Chun-Tai Liu 《Rare Metals》 SCIE EI CAS CSCD 2025年第3期1833-1843,共11页
The pressing demand for ultrathin and flexible shields to counter electromagnetic interference(EMI)has sparked interest in Ti3C2TxMXene materials due to their exceptional electrical conductivity,tunable surfa... The pressing demand for ultrathin and flexible shields to counter electromagnetic interference(EMI)has sparked interest in Ti3C2TxMXene materials due to their exceptional electrical conductivity,tunable surface chemistry,and layered structure.However,pure Ti3C2TxMXene films often lack the mechanical properties required for practical engineering applications,and traditional reinforcement methods tend to reduce electrical conductivity.This work demonstrates an effective strategy to enhance the alignment and densely packed layered structure of Ti3C2TxMXene films by regulating the acidity and alkalinity of Ti3C2TxMXene aqueous solutions.This approach simultaneously improves mechanical strength and electromagnetic interference shielding effectiveness(EMI SE).Compared with original Ti3C2TxMXene films,MXene films modified with ammonia solution(NH3·H2O)via OH-show a significant improvement in tensile strength(27.7±1.9 MPa).Meanwhile,MXene films treated with hydrochloric acid(HCl)via H+reach an even higher tensile strength of 39±1.5 MPa.Moreover,the EMI SE values of the treated MXene films increase significantly,each reaching 66.2 and 58.4 dB.The maximum improvements in EMI SE values for the acid-and alkali-treated samples are 17.9%and 4%,respectively.In conclusion,the simultaneous enhancement of mechanical strength and EMI shielding efficacy highlights the potential of acid-and alkali-treated Ti3C2TxMXene films for applications in ultrathin and flexible EMI shielding materials. 展开更多
关键词 Ti3C2TxMXene film Acid and alkali treatments Mechanical properties EMI shielding performance
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Flexible, magnetic and sandwich-structural Fe2O3/CNT/Fe2O3 composite film with absorption-dominant EMI shielding performance 认领 引用 被引量：4
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作者 Mengmeng Wang Li Tian +4 位作者 Xiao You Junmin Zhang Qinggang Li Jinshan Yang Shaoming Dong 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2025年第24期122-132,共11页
To mitigate secondary electromagnetic pollution,there is an urgent need to develop absorption-dominant electromagnetic interference(EMI)shielding materials with low density,reduced thickness,lightweight construction,f... To mitigate secondary electromagnetic pollution,there is an urgent need to develop absorption-dominant electromagnetic interference(EMI)shielding materials with low density,reduced thickness,lightweight construction,flexibility,exceptional mechanical strength,and superior electrothermal and photothermal properties,particularly for flexible and wearable electronics.In this regard,we designed an absorption-based composite film comprising carbon nanotubes(CNT)and α-Fe2O3,featuring a CNT layer sandwiched between twoα-Fe2O3layers on the upper and lower surfaces.This composite film was fabricated through an electrodeposition process followed by a thermal annealing procedure to achieve enhanced EMI shielding performance along with improved electrothermal and photothermal properties.The strategically designed sandwich structure allows the rough surface of the upper α-Fe2O3layer to not only improve the impedance mismatch between free space and the composite film,facilitating the penetration of incident electromagnetic(EM)waves into the film and promoting increased EM absorption rather than reflection,but also to enhance electrical conductivity,thereby improving electron mobility and density.Consequently,the average total shielding effectiveness(SE)of the CNT/Fe16-300 composite demonstrates remarkable EMI shielding effectiveness(EMI SE:56.8 dB).Furthermore,the alteration in the absorption-to-reflection ratio(A/R)signifies a transition in the EMI shielding mechanism from reflection(0.69 for the pristine CNT film)to absorption(1.86 for the CNT/Fe16-300)with the incremental deposition of α-Fe2O3nanoparticles.This work presents a feasible manufacturing approach for developing composite films with a sandwich structure that exhibits absorption-dominant EMI shielding capabilities,contributing to advancements in thermal management and multifunctional electromagnetic shielding applications. 展开更多
关键词 Absorption-dominant electromagnetic interference CNT/Fe16-300 composite film Sandwich structure α-Fe2O3layer
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Dopant compensation in component-dependent self-doped Cs2SnI6thin films grown with PLD at room temperature 认领 引用 被引量：1
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作者 Yansu Shan Qingyang Zhang +5 位作者 Haoming Wei Shiyu Mao Luping Zhu Xiaofan Liu Xia Wang Bingqiang Cao 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2025年第14期9-17,共9页
Tetravalent tin(Sn4+)-based inorganic perovskite semiconductors like Cs2SnI6are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendli... Tetravalent tin(Sn4+)-based inorganic perovskite semiconductors like Cs2SnI6are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendliness.In this paper,we reported the dopant compensation effect in the component-dependent self-doped(111)-oriented Cs2SnI6thin films grown with pulsed laser deposition(PLD)at room temperature.The films were grown on(100)-SrTiO3(STO)substrates at room temperature by PLD.Hall results of the Cs2SnI6films with different components realizing by controlling the ratio of SnI4/CsI in the targets demonstrate a clear change of conductivity type from N-type to P-type,while the carrier concentration decreases from 1018 to 1013 and accordingly the film resistivity increases significantly from 3.8 to 2506Ωcm.The defect-relatedopticalfingerprints of Cs2SnI6films werealsoinvestigated withtemperature-dependent photoluminescence spectroscopy.At low temperatures of 10 K,the Cs2SnI6films exhibit donor-bound(D0X)and donor-acceptor pair(DAP)emission,respectively,due to the self-doping effect.These re-sults indicate that controlling the composition of the PLD target is a powerful way to tune the electrical properties of Cs2SnI6films for possible applications in solar cells or X-ray detectors. 展开更多
关键词 Cs2SnI6thin films PLD Target composition Self-doping Dopant compensation
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Magnetotransport properties of large-scale PtTe2 Dirac semimetal films grown by pulsed laser deposition 认领 引用
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作者 Zhongqiang Chen Zhe Wang +3 位作者 Kankan Xu Xu Zhang Ruijie Xu Xuefeng Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2025年第7期135-139,共5页
Type-II Dirac semimetal PtTe2is a promising candidate for various electronic device applications due to its high carrier mobility,high conductivity,and air stability.In this work,we report on the growth of large-scale... Type-II Dirac semimetal PtTe2is a promising candidate for various electronic device applications due to its high carrier mobility,high conductivity,and air stability.In this work,we report on the growth of large-scale PtTe2films by the pulsed laser deposition(PLD)and the comparison of the magnetotransport properties with the PtTe2films grown by the chemical vapor deposition(CVD).The low-temperature Hall curves of the PLD-grown films exhibit a linear behavior,in contrast with the nonlinear characteristic of the Hall behavior observed in CVD-grown films,in which a defect gradient is introduced.Meanwhile,both PtTe2films show weak antilocalization at low temperatures,which is attributed to the strong spin–orbit coupling. 展开更多
关键词 PtTe2 pulsed laser deposition magnetotransport properties thin films
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Unveiling the orientation growth mechanism and solar-blind response performance of β-Ga2O3(100)film on SiC substrate with AlN buffer layer 认领 引用
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作者 Jie Su Zixin Zhang +5 位作者 Liang Shi Liping Feng Fuchao He Jingjing Chang Jincheng Zhang Yue Hao 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2025年第7期20-28,共9页
Optimizing the orientation of β-Ga2O3 has emerged as an effective strategy to design high-performance β-Ga2O3 device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by... Optimizing the orientation of β-Ga2O3 has emerged as an effective strategy to design high-performance β-Ga2O3 device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga2O3(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga2O3(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga2O3(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga2O3(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×1012 Jones and photo-to-dark current ratio of 1.11×105,which are the highest among the reported β-Ga2O3 solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga2O3(100)orientation film and high-performance solar-blind photodetector. 展开更多
关键词 β-Ga2O3(100)film Orientation growth AlN buffer layer Solar-blind photodetector DFT calculation
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Effect of Oxygen/Ar Flow Rate Ratio on Properties of Amorphous Ga2O3Thin Films on Flexible and Rigid Substrates 认领 引用
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作者 Li Yuanjie Zhao Yuqing Liang Chenyu 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2025年第12期2993-2999,共7页
Amorphous Ga2O3(a-Ga2O3)thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ra... Amorphous Ga2O3(a-Ga2O3)thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ratio on the structure,optical property,surface morphology,and chemical bonding properties of the a-Ga2O3 films was investigated.Results show that the average optical transmittance of the a-Ga2O3 films is over 80%within the wavelength range of 300-2000 nm.The extracted optical band gap of the a-Ga2O3 films is increased from 4.97 eV to 5.13 eV with the increase in O2/Ar flow rate ratio from 0 to 0.25,due to the decrease in concentration of oxygen vacancy defects in the film.Furthermore,the optical refractive index and surface roughness of the a-Ga2O3 films are optimized when the O2/Ar flow rate ratio reaches 0.25.X-ray photoelectron spectroscopy analysis also shows that the proportion of oxygen vacancies(VO)and Ga-O chemical bonds in the O 1s peak is gradually decreased with the increase in O2/Ar flow rate ratio from 0 to 0.25,proving that increasing the O2/Ar flow rate ratio during film growth can reduce the concentration of oxygen vacancy defects in a-Ga2O3 films.In this case,a-Ga2O3 with optimal properties can be obtained.This work provides a research basis for high-performance flexible and rigid deep ultraviolet solar-blind detection devices based on a-Ga2O3 films. 展开更多
关键词 solar-blind DUV photodetector amorphous Ga2O3thin film flexible electronics oxygen vacancy defect RF magnetron sputtering
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Scalable Synthesis of Ultrathin Silica Nanosheets for Applications in Thermal-Management Aerogels and Flexible Composite Films 认领 引用
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作者 Qun-Yao Yuan Yuan-Fan Gu +1 位作者 Rong-Rong Cheacharoen Jie Zhao 《Rare Metals》 SCIE EI CAS CSCD 2026年第1期569-579,共11页
Silica nanosheets(SiO2 NSs) hold great promise for advanced thermal protection applications because of their exceptional thermal and chemical stability.However,their development has been hindered by challenges in s... Silica nanosheets(SiO2 NSs) hold great promise for advanced thermal protection applications because of their exceptional thermal and chemical stability.However,their development has been hindered by challenges in scalable synthesis and structural integration for specialized applications.Herein,we report a facile and scalable wet-chemical strategy for producing high-quality and ultrathin SiO2 NSs with lateral dimension more than 5 μm and thickness of ~2 nm.After graphene oxide(GO)-templated thermal treatment,the mechanical stiffness of the SiO2 NSs was significantly enhanced from 60.9 to 76.1 GPa.Leveraging their unique ultrathin and large lateral properties,the ultralight SiO2 NSs aerogel was achieved via a bidirectional freeze-casting technique.The aerogel demonstrates excellent fire resistance and high-temperature tolerance,maintaining its structure upon direct exposure to 1200℃ flames.Furthermore,the integration of SiO2 NSs into a polycaprolactone(PCL) matrix has enabled the development of a large-area and flexible fire-retardant composite film,which exhibits an exceptional flame selfextinguishing time of 2 s and mechanical flexibility.This work offers a scalable platform for fabricating functional SiO2 NSsbased materials and paves the way for their potential application in energy devices,aerospace protection,and flexible electronics. 展开更多
关键词 SiO2aerogels SiO2composite films SiO2nanosheets thermal management
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A novel flame retardant strategy for molten magnesium alloys:The effect of the new protective gas C3H2F6on EV33 alloy 认领 引用
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作者 Longbiao Feng Lunyong Zhang +7 位作者 Hongxian Shen Chaojun Zhang Zhi Song Jiaming Cao Fuyang Cao Zhiliang Ning Yongjiang Huang Jianfei Sun 《Journal of Magnesium and Alloys》 SCIE EI CAS CSCD 2026年第6期180-198,共19页
Resolving the ignition issue of magnesium alloys is essential for broadening their application scope.This research investigates the EV33 magnesium alloy,delving into an innovative flame-retardant strategy,with a speci... Resolving the ignition issue of magnesium alloys is essential for broadening their application scope.This research investigates the EV33 magnesium alloy,delving into an innovative flame-retardant strategy,with a specific focus on the impact of the novel protective gas C3H2F6on the flame-retardant properties of the alloy.This paper unveils the morphological characteristics of the EV33 magnesium alloy surface in the absence of protective gas,while employing thermodynamic principles to establish the preferential reaction stages of the alloy,computing the residual stress of MgF2,and assessing the flame-retardant and antioxidative properties of C3H2F6.The study finds that under conditions without protective gas,the oxide film on the EV33 alloy surface is prone to cracking,which accelerates the ignition process of the alloy.Conversely,in an environment enriched with C3H2F6,the formation of a dense oxide film on the alloy surface significantly enhances its thermal stability and flame-retardant properties.This mechanism encompasses the formation of a secondary oxide film,where C3H2F6accelerates the rapid development of this film,effectively repairing damage to the primary oxide film and inhibiting further diffusion of the oxidation reaction.Furthermore,this study elucidates the origin of oxide film rupture,showing that under conditions without protective gas,the precipitated phases and grain boundaries on the surface of the alloy induce the rupture of the oxide film,attributed to stress concentration phenomena occurring around the grain boundaries. 展开更多
关键词 Ignition Oxidation EV33 alloy C3H2F6gas Oxide film rupture Residual stress
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TiO2/CdS/α-Fe2O3异质结构光阳极的制备及性能研究 认领 引用
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作者 苏适 王立兴 +2 位作者 车致远 张丽娜 马晋文 《人工晶体学报》 CAS 北大核心 2026年第6期966-971,共6页
为改善TiO2光阳极的光吸收范围窄、光生载流子复合率高等问题,本研究采用水热法与连续离子层吸附反应法相结合的工艺,成功制备了TiO2/CdS/α-Fe2O3三元异质结薄膜。利用X射线衍射、扫描电子显微镜、紫外-可见光吸收光谱和... 为改善TiO2光阳极的光吸收范围窄、光生载流子复合率高等问题,本研究采用水热法与连续离子层吸附反应法相结合的工艺,成功制备了TiO2/CdS/α-Fe2O3三元异质结薄膜。利用X射线衍射、扫描电子显微镜、紫外-可见光吸收光谱和三电极光电测试系统对所制备光阳极的晶相、微观形貌、光学特性和光电化学性质进行了系统的表征和分析。测试结果显示,TiO2纳米片表面均匀负载CdS纳米颗粒,α-Fe2O3以规整纳米刺形态致密生长于复合体系表面;TiO2/CdS/α-Fe2O3三元异质结薄膜的光吸收边红移至595 nm,较纯TiO2和TiO2/CdS二元复合薄膜有显著拓宽,其最大光电流密度达2.37 mA/cm2,分别为纯TiO2和TiO2/CdS的24倍和1.9倍。研究表明,TiO2/CdS/α-Fe2O3光阳极的性能提升归因于CdS和α-Fe2O3拓宽了TiO2的光响应范围,以及三者形成了阶梯式能级结构,有效促进光生电子-空穴对的分离与输运,降低载流子复合率。本研究为TiO2基光阳极的结构优化与性能提升提供了可行方案和实验依据。 展开更多
关键词 TiO2 CdS α-Fe2O3 异质结薄膜 光电化学性能
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激光织构提升MoS2薄膜摩擦学性能的机制 认领 引用
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作者 师晶 谭李 陈威 《材料保护》 CAS CSCD 2026年第3期89-102,共14页
MoS2具有良好的真空润滑性能。激光微织构能有效减小真实接触面积,被广泛用于改善固体表面的摩擦学性能。通过织构化304不锈钢表面,再在其表面磁控溅射沉积MoS2薄膜,实现了真空条件下(0.01 MPa)的超润滑(摩擦系数0.004),系统研究... MoS2具有良好的真空润滑性能。激光微织构能有效减小真实接触面积,被广泛用于改善固体表面的摩擦学性能。通过织构化304不锈钢表面,再在其表面磁控溅射沉积MoS2薄膜,实现了真空条件下(0.01 MPa)的超润滑(摩擦系数0.004),系统研究了表面织构设计对薄膜摩擦学性能的作用规律,重点揭示了表面织构化与MoS2薄膜纳米结构调控协同润滑机理。结果表明:表面织构化可显著提升MoS2薄膜的摩擦性能,摩擦系数降低92%,磨损率降低56%。界面分析表明,部分薄膜发生转移行为并在对偶球接触面形成润滑转移膜。但表面织构的减摩效率强烈依赖于织构参数对固体润滑状态的影响,织构周期的单调递增会导致界面润滑状态的非线性转变。在此基础上,结合拉曼光谱进一步探究了织构周期对MoS2薄膜摩擦学行为的影响机制,结果显示,摩擦表面接触面积和接触界面法向压力存在竞争机制:在达到有效接触织构周期上限前,MoS2薄膜的摩擦学性能与接触面积负相关;达上限后,法向压力决定润滑剂的存留情况,进而影响润滑性能. 展开更多
关键词 MoS2薄膜 固体润滑 激光织构 减摩机制
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基于第一性原理的SiO2薄膜选择性渗透机制及钯合金氢敏元件性能优化 认领 引用
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作者 曾晓哲 赫树开 +4 位作者 王幸辉 原伟 张志辉 秦自瑞 殷楠 《仪表技术与传感器》 CSCD 北大核心 2026年第3期5-10,29,共6页
为解决MEMS钯合金氢气传感器在实际应用中易受O2、CO2等气体交叉干扰问题,文中结合第一性原理分子动力学与势能面扫描技术,并辅以实验验证,研究了SiO2薄膜作为传感器保护层的作用机制。在理论模拟层面,构建了含H2、O2、C... 为解决MEMS钯合金氢气传感器在实际应用中易受O2、CO2等气体交叉干扰问题,文中结合第一性原理分子动力学与势能面扫描技术,并辅以实验验证,研究了SiO2薄膜作为传感器保护层的作用机制。在理论模拟层面,构建了含H2、O2、CO2分子的SiO2超晶胞模型,结果显示:H2分子进入SiO2次表层能垒为0.83 eV,内部扩散能垒为0.93 eV,易于扩散;而O2、CO2分子进入次表层的能垒分别至少为5.86、8.30 eV,难以穿透且内部扩散阻力更大。同时采用原子层沉积工艺制备10 nm非晶SiO2薄膜,经球差校正透射电镜(aberration corrected transmission electron microscopy,AC-TEM)等表征确认其结构。性能测试表明:有无SiO2隔离膜的传感器对比明显,无SiO2隔离膜的传感器在空气背景下受O2干扰严重,有SiO2隔离膜的传感器可有效阻隔O2且不影响H2扩散,传感器的响应性能、恢复性能及灵敏度稳定。文中证实SiO2薄膜能显著提升MEMS钯合金氢气传感器的抗干扰能力,为其在复杂环境中的应用提供了理论与实验支撑。 展开更多
关键词 MEMS钯合金氢气传感器 SiO2薄膜 第一性原理分子动力学 选择性渗透 原子层沉积
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光激发SnO2/ZnO复合薄膜室温丁烷传感器研究设计 认领 引用
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作者 赵文锋 邝浪鑫 +3 位作者 林子健 高源 罗靖宇 莫钧朝 《传感器与微系统》 北大核心 2026年第7期126-131,共6页
丁烷(C4H10)是一种常见可燃气体,中低浓度泄漏可能引发爆炸或中毒,亟需高灵敏、低功耗检测。传统金属氧化物半导体传感器依赖高温激发,存在功耗高、稳定性差等缺陷。采用射频磁控溅射法制备二氧化锡(SnO2)/氧化锌(ZnO)异质结... 丁烷(C4H10)是一种常见可燃气体,中低浓度泄漏可能引发爆炸或中毒,亟需高灵敏、低功耗检测。传统金属氧化物半导体传感器依赖高温激发,存在功耗高、稳定性差等缺陷。采用射频磁控溅射法制备二氧化锡(SnO2)/氧化锌(ZnO)异质结复合薄膜,并结合275 nm紫外激光,构建室温光激发型丁烷传感器。在340μW·cm-2紫外照射下,可实现100×10-6-1000×10-6丁烷检测;100×10-6时响应/恢复时间分别为24,69 s。对比乙醇及乙烯,传感器响应值分别仅为其5倍和9倍,表现出优异选择性;30天测试中响应波动仅0.5%,稳定性优良。该传感器兼具高灵敏度、快速响应与长期稳定性,适用于室温中低浓度丁烷泄漏的实时监测与预警,在便携式气体检测领域具有良好应用前景。 展开更多
关键词 紫外光激发 异质结 二氧化锡/氧化锌复合薄膜 室温传感器 丁烷检测
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AZ91D镁合金表面掺杂纳米ZrO2颗粒的微弧氧化膜制备及耐高温氧化性 认领 引用
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作者 李孝坤 徐飞亚 《金属热处理》 CAS CSCD 北大核心 2026年第7期339-347,共9页
为提高AZ91D镁合金的耐高温氧化性,延长其在高温环境下的使用寿命,采用以硅酸钠、氢氧化钠和氟化钾为基础并添加不同浓度(0.5、1.0、1.5和2.0 g/L)纳米ZrO2颗粒的电解液,在AZ91D镁合金表面制备出掺杂纳米ZrO2颗粒的微弧氧化膜。... 为提高AZ91D镁合金的耐高温氧化性,延长其在高温环境下的使用寿命,采用以硅酸钠、氢氧化钠和氟化钾为基础并添加不同浓度(0.5、1.0、1.5和2.0 g/L)纳米ZrO2颗粒的电解液,在AZ91D镁合金表面制备出掺杂纳米ZrO2颗粒的微弧氧化膜。系统研究了纳米ZrO2颗粒对微弧氧化膜成分、物相、形貌特征以及耐高温氧化性能的影响。结果表明:掺杂纳米ZrO2颗粒的微弧氧化膜主要含有Mg、O、Si和Zr元素,且由MgO和ZrO2相构成。随着纳米ZrO2颗粒浓度的增加,膜层中纳米ZrO2颗粒的质量分数先升高后降低,孔隙率则先降低后升高,导致其致密性与耐高温氧化性能均先逐步提高然后下降。纳米ZrO2颗粒浓度为1.0 g/L时,制备的膜层中纳米ZrO2颗粒的质量分数高达8.8%,孔隙率仅8.87%,表现出良好的致密性。在450℃恒温环境中放置相同时间后,该膜层的氧化增重明显低于AZ91D镁合金且氧化程度较轻,用作隔热保护层能有效提高AZ91D镁合金的耐高温氧化性能,有望延长其在高温环境中的服役寿命。 展开更多
关键词 微弧氧化膜 纳米ZrO2颗粒 孔隙率 耐高温氧化性能
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Preparation of(111)-Orientation NiO Epitaxial Films and their High Selectivity for H2S Gas Detection 认领 引用
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作者 Lingling Kuang Tao Xiang +10 位作者 Jiangxiao Li Siyu Wu Yongqi Dong Qingyu He Jiawei Xue Xinyan Chen Yajun Tao Yuting Wang Han Jin Jianxin Yi Zhenlin Luo 《Chinese Journal of Chemical Physics》 SCIE EI CAS CSCD 2025年第3期272-280,I0011-I0013,I0108,共9页
Nickel oxide(NiO)based gas sensors have at-tracted intense attention due to its high re-sponse to hydrogen sulfide(H2S)gas.It has been demonstrated that the NiO sensors with exposed(111)facet exhibit excellent perf... Nickel oxide(NiO)based gas sensors have at-tracted intense attention due to its high re-sponse to hydrogen sulfide(H2S)gas.It has been demonstrated that the NiO sensors with exposed(111)facet exhibit excellent perfor-mance,but the single-orientation NiO sensors with exposed(111)facet have rarely been studied.In this work,high quality(111)-ori-ented NiO epitaxial films were fabricated by pulsed laser deposition.Detailed crystalline structural information was revealed by using synchrotron based X-ray diffraction(XRD)technology.These NiO thin films show good se-lectivity for H2S gas detection.Without further modification,the highest response to 100 ppm H2S was measured to be 13.07 at 300℃,and limit of detection(LOD)could be as low as 186 ppb.Fitting of the electrical response curves during adsorption and desorption of H2S gas indicates the two-site Langmuir kinetic processes.Combining with XPS and XAS measure-ments,the mechanism was discussed.Density functional theory(DFT)calculations show that NiO with exposed(111)facets has the most negative adsorption energy,indicating more sen-sitive to H2S.These results could inspire more studies of metal oxide semiconductor-based gas sensors with specific surface. 展开更多
关键词 NiO Epitaxial film H2S Gas detection Gas sensing
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