Stack effect is a dominant driving force for building natural ventilation.Analytical models were developed for the evaluation of stack effect in a shaft,accounting for the heat transfer from shaft interior boundaries....Stack effect is a dominant driving force for building natural ventilation.Analytical models were developed for the evaluation of stack effect in a shaft,accounting for the heat transfer from shaft interior boundaries.Both the conditions with constant heat flux from boundaries to the airflow and the ones with constant boundary temperature were considered.The prediction capabilities of these analytical models were evaluated by using large eddy simulation(LES)for a hypothetical shaft.The results show that there are fairly good agreements between the predictions of the analytical models and the LES predictions in mass flow rate,vertical temperatures profile and pressure difference as well.Both the results of analytical models and LES show that the neutral plane could locate higher than one half of the shaft height when the upper opening area is identical with the lower opening area.Further,it is also shown that the analytical models perform better than KLOTE's model does in the mass flow rate prediction.展开更多
After comparing the mechanism of tilted plume under stack effect with that of spill plume,the tilted plume model induced by stack effect in a vertical shaft is developed simply based on the theoretical results and a s...After comparing the mechanism of tilted plume under stack effect with that of spill plume,the tilted plume model induced by stack effect in a vertical shaft is developed simply based on the theoretical results and a series of full-scale tests. It is shown that the two sides of plume are symmetrical and have an accordant regulation that the plume radius has a linear relation to the height z. The profile of fire plume under stack effect is similar to the windblown flame in wind tunnel,and the range of flame deflection angle is about from 50 to 60 degree.展开更多
The stack effect in super high-rise buildings is mainly influenced by the temperature difference between the indoor and outdoor environments,wind pressure,building height,and the airtightness of building components.Co...The stack effect in super high-rise buildings is mainly influenced by the temperature difference between the indoor and outdoor environments,wind pressure,building height,and the airtightness of building components.Consequently,the intensity and frequency of the stack effect are inherently impacted by regional and seasonal climate conditions.This study initially examines two critical meteorological elements-temperature and wind speed-that are closely related to the stack effect in high-rise buildings.Then the appropriate climate demarcation for evaluating the stack effect in high-rise buildings,which is based on the building climate demarcation in China is investigated,and the land area of China is divided into four climate regions for the purpose of stack effect assessment.Utilizing annual meteorological monitoring data from each region,the probability function models for temperature and wind speed are developed,and a joint probability distribution function for temperature and wind speed in each region is derived using a binary copula function.Finally,the probabilistic assessment of the stack effect under both pure and combined thermal pressures across different climatic zones is numerically investigated by employing a standardized high-rise building model.This research enables a refined assessment of the stack effect for high-rise building,and provides a useful reference to improve the design codes in future.展开更多
Leakage current of CMOS circuit increases dramatically with the technologyscaling down and has become a critical issue of high performance system. Subthreshold, gate andreverse biased junction band-to-band tunneling (...Leakage current of CMOS circuit increases dramatically with the technologyscaling down and has become a critical issue of high performance system. Subthreshold, gate andreverse biased junction band-to-band tunneling (BTBT) leakages are considered three maindeterminants of total leakage current. Up to now, how to accurately estimate leakage current oflarge-scale circuits within endurable time remains unsolved, even though accurate leakage modelshave been widely discussed. In this paper, the authors first dip into the stack effect of CMOStechnology and propose a new simple gate-level leakage current model. Then, a table-lookup basedtotal leakage current simulator is built up according to the model. To validate the simulator,accurate leakage current is simulated at circuit level using popular simulator HSPICE forcomparison. Some further studies such as maximum leakage current estimation, minimum leakage currentgeneration and a high-level average leakage current macromodel are introduced in detail.Experiments on ISCAS85 and ISCAS89 benchmarks demonstrate that the two proposed leakage currentestimation methods are very accurate and efficient.展开更多
Generalized stacking-fault energies (GSFEs) of basal-plane stacking faults 11 and 12 in Mg alloys have been studied based on first-principles calculations, where 43 alloying elements were considered. It is found tha...Generalized stacking-fault energies (GSFEs) of basal-plane stacking faults 11 and 12 in Mg alloys have been studied based on first-principles calculations, where 43 alloying elements were considered. It is found that the most contributing features of alloying elements to GSFEs are bulk modulus, equilibrium volume, binding energy, atomic radius and ionization energy. Both bulk modulus and ionization energy exhibit positive relationships with GSFEs, and the others show opposite relationships. Multiple regressions have been performed to offer a quantitative prediction for basal-plane GSFEs in Mg-X systems. GSFEs, alloying effects of elements and the prediction model established within this work may provide guidelines for new Mg alloys design with better ductility.展开更多
Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold...Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.展开更多
Intrinsic stacking-fault energy is a critical parameter influencing the various mechanical performances of aus- tenitic steels with high Mn concentrations. However, quantitative calculations of the stacking-fault ener...Intrinsic stacking-fault energy is a critical parameter influencing the various mechanical performances of aus- tenitic steels with high Mn concentrations. However, quantitative calculations of the stacking-fault energy (SFE) of the face-centered cubic (fcc) Fe, including the changes in concentrations and geometrical distribution of alloying atoms, cannot be obtained by using previous computation models. On the basis of the interaction energy model, we evaluated the effects of a single alloying atom (i.e., Mn, A1, Si, C and N), as well as its aggregates, including the Mn-X dimer and Mn2-X trimer (X = A1, Si, C and N) on the SFE of the fcc Fe via first-principle calculations. Given low concentrations (〈10 wt%) of alloying atoms, dimers and trimers, theoretical calculations reveal the following: (1) Alloying atom Mn causes a decrease in the SFE, whereas A1, Si, C and N significantly increase the SFE; (2) combination with other alloying atoms to form the Mn-X dimer (X = A1, Si, C and N) exerts an effect on SFE that, to a certain extent, is close to that of the corresponding single X atom; (3) the interaction between Mnz-X and the stacking fault is stronger than that of the corresponding single X atom, inducing a significant increase in the SFE of fcc Fe. The theoretical results we obtained demonstrate that the increase in SFE in high-Mn steel originates from the synergistic effect of Mn and other trace alloy atoms.展开更多
The stabilities of the complexes of three pyridine-like ligands with M(II)(ATP)2- and M(II)(M=Ni,Co)were studied by spectrophotometry and by comparing the stability constants of the ternary complexes with these of ...The stabilities of the complexes of three pyridine-like ligands with M(II)(ATP)2- and M(II)(M=Ni,Co)were studied by spectrophotometry and by comparing the stability constants of the ternary complexes with these of the binary complexes.A stacking interaction between the pyridine ring and the purine ring of ATP is indicated.The general existence of the stacking interaction encourages us to interpret the antitumor mechanism of a new class of antitumor drugs.展开更多
介绍了垂直堆叠芯片单粒子效应地面试验预计方法,通过一种背面减薄方法,解决一款宇航用垂直堆叠芯片在单粒子效应地面试验中的难点,使其地面试验得以顺利进行,获得了该芯片的主要单粒子事件参数,包括单粒子翻转饱和截面、线性能量传输...介绍了垂直堆叠芯片单粒子效应地面试验预计方法,通过一种背面减薄方法,解决一款宇航用垂直堆叠芯片在单粒子效应地面试验中的难点,使其地面试验得以顺利进行,获得了该芯片的主要单粒子事件参数,包括单粒子翻转饱和截面、线性能量传输阈值。根据故障定位,该款垂直堆叠芯片抗单粒子翻转能力薄弱点为上层硅互补金属氧化物半导体(Complementary metal oxide semiconductor,CMOS)波控芯片锁存器IP单元。本研究形成了一套通用的垂直堆叠芯片单粒子效应地面试验预计方案,可为高可靠高密度宇航集成电路研制提供有力保障。展开更多
It is necessary to understand the features of air pressure in a drainage stack of a high-rise building for properly designing and operating a drainage system. This paper presents a mathematical model for predicting th...It is necessary to understand the features of air pressure in a drainage stack of a high-rise building for properly designing and operating a drainage system. This paper presents a mathematical model for predicting the stack performance. A step function is used to describe the effect of the air entrainment caused by the water discharged from branch pipes. An additional source term is introduced to reflect the gas-liquid interphase interaction (GLII) and stack base effect. The drainage stack is divided into upper and base parts. The air pressure in the upper part is predicted by a total variation diminishing (TVD) scheme, while in the base part, it is predicted by a characteristic line method (CLM). The predicted results are compared with the data measured in a real-scale high- rise test building. It is found that the additional source term in the present model is effective. It intensively influences the air pressure distribution in the stack. The air pressure is also sensitive to the velocity-adjusting parameter (VAP), the branch pipe air entrainment, and the conditions on the stack bottom.展开更多
In the present work, a two-dimensional(2D) analytical framework of triple material symmetrical gate stack(TMGS)DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along wit...In the present work, a two-dimensional(2D) analytical framework of triple material symmetrical gate stack(TMGS)DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.展开更多
基金Project(50838009)supported by the National Natural Science Foundation of ChinaProject(2010DFA72740-03)supported by the National Key Technology Research and Development Program of China
摘要Stack effect is a dominant driving force for building natural ventilation.Analytical models were developed for the evaluation of stack effect in a shaft,accounting for the heat transfer from shaft interior boundaries.Both the conditions with constant heat flux from boundaries to the airflow and the ones with constant boundary temperature were considered.The prediction capabilities of these analytical models were evaluated by using large eddy simulation(LES)for a hypothetical shaft.The results show that there are fairly good agreements between the predictions of the analytical models and the LES predictions in mass flow rate,vertical temperatures profile and pressure difference as well.Both the results of analytical models and LES show that the neutral plane could locate higher than one half of the shaft height when the upper opening area is identical with the lower opening area.Further,it is also shown that the analytical models perform better than KLOTE's model does in the mass flow rate prediction.
基金supported by the National Key Project of Scientific and Technical Supporting Programs Funded by Ministry of Science &Technology of China ( Grant No: 2006BAJ13B03)the RGCCERG Grant #CityU1253/04E from Hong Kong Re-search Grant Council, HKSAR
摘要After comparing the mechanism of tilted plume under stack effect with that of spill plume,the tilted plume model induced by stack effect in a vertical shaft is developed simply based on the theoretical results and a series of full-scale tests. It is shown that the two sides of plume are symmetrical and have an accordant regulation that the plume radius has a linear relation to the height z. The profile of fire plume under stack effect is similar to the windblown flame in wind tunnel,and the range of flame deflection angle is about from 50 to 60 degree.
基金the financial supports from the National Natural Science Foundation of China under Grant No.52178480 and the State Key Laboratory of Subtropical Building and Urban Science under Grant No.2024ZB10.
摘要The stack effect in super high-rise buildings is mainly influenced by the temperature difference between the indoor and outdoor environments,wind pressure,building height,and the airtightness of building components.Consequently,the intensity and frequency of the stack effect are inherently impacted by regional and seasonal climate conditions.This study initially examines two critical meteorological elements-temperature and wind speed-that are closely related to the stack effect in high-rise buildings.Then the appropriate climate demarcation for evaluating the stack effect in high-rise buildings,which is based on the building climate demarcation in China is investigated,and the land area of China is divided into four climate regions for the purpose of stack effect assessment.Utilizing annual meteorological monitoring data from each region,the probability function models for temperature and wind speed are developed,and a joint probability distribution function for temperature and wind speed in each region is derived using a binary copula function.Finally,the probabilistic assessment of the stack effect under both pure and combined thermal pressures across different climatic zones is numerically investigated by employing a standardized high-rise building model.This research enables a refined assessment of the stack effect for high-rise building,and provides a useful reference to improve the design codes in future.
摘要Leakage current of CMOS circuit increases dramatically with the technologyscaling down and has become a critical issue of high performance system. Subthreshold, gate andreverse biased junction band-to-band tunneling (BTBT) leakages are considered three maindeterminants of total leakage current. Up to now, how to accurately estimate leakage current oflarge-scale circuits within endurable time remains unsolved, even though accurate leakage modelshave been widely discussed. In this paper, the authors first dip into the stack effect of CMOStechnology and propose a new simple gate-level leakage current model. Then, a table-lookup basedtotal leakage current simulator is built up according to the model. To validate the simulator,accurate leakage current is simulated at circuit level using popular simulator HSPICE forcomparison. Some further studies such as maximum leakage current estimation, minimum leakage currentgeneration and a high-level average leakage current macromodel are introduced in detail.Experiments on ISCAS85 and ISCAS89 benchmarks demonstrate that the two proposed leakage currentestimation methods are very accurate and efficient.
基金financially supported by the National Key Research and Development Program of China(No.2016YFB0701202)the National Natural Science Foundation of China(General Program No.51474149 and Key Program No.51631006)
摘要Generalized stacking-fault energies (GSFEs) of basal-plane stacking faults 11 and 12 in Mg alloys have been studied based on first-principles calculations, where 43 alloying elements were considered. It is found that the most contributing features of alloying elements to GSFEs are bulk modulus, equilibrium volume, binding energy, atomic radius and ionization energy. Both bulk modulus and ionization energy exhibit positive relationships with GSFEs, and the others show opposite relationships. Multiple regressions have been performed to offer a quantitative prediction for basal-plane GSFEs in Mg-X systems. GSFEs, alloying effects of elements and the prediction model established within this work may provide guidelines for new Mg alloys design with better ductility.
基金Supported by the National Natural Science Foundation of China under Grant No 61306126
摘要Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
基金supported by the National Key Research and Development Program of China(No. 2016YFB0300801)the National Natural Science Foundation of China(Nos.11427806,51471067,51371081,51671082 and 51601060)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20120161110036)the Hunan Provincial Natural Science Foundation of China(No.14JJ4052)
摘要Intrinsic stacking-fault energy is a critical parameter influencing the various mechanical performances of aus- tenitic steels with high Mn concentrations. However, quantitative calculations of the stacking-fault energy (SFE) of the face-centered cubic (fcc) Fe, including the changes in concentrations and geometrical distribution of alloying atoms, cannot be obtained by using previous computation models. On the basis of the interaction energy model, we evaluated the effects of a single alloying atom (i.e., Mn, A1, Si, C and N), as well as its aggregates, including the Mn-X dimer and Mn2-X trimer (X = A1, Si, C and N) on the SFE of the fcc Fe via first-principle calculations. Given low concentrations (〈10 wt%) of alloying atoms, dimers and trimers, theoretical calculations reveal the following: (1) Alloying atom Mn causes a decrease in the SFE, whereas A1, Si, C and N significantly increase the SFE; (2) combination with other alloying atoms to form the Mn-X dimer (X = A1, Si, C and N) exerts an effect on SFE that, to a certain extent, is close to that of the corresponding single X atom; (3) the interaction between Mnz-X and the stacking fault is stronger than that of the corresponding single X atom, inducing a significant increase in the SFE of fcc Fe. The theoretical results we obtained demonstrate that the increase in SFE in high-Mn steel originates from the synergistic effect of Mn and other trace alloy atoms.
基金Supported by the National Natural Science Foundation of Chinathe Doctoral Program Foundation of Institution of High Education the Research Foundation of State Key Laboratory of Coordination Chemistry,Nanjing University.
摘要The stabilities of the complexes of three pyridine-like ligands with M(II)(ATP)2- and M(II)(M=Ni,Co)were studied by spectrophotometry and by comparing the stability constants of the ternary complexes with these of the binary complexes.A stacking interaction between the pyridine ring and the purine ring of ATP is indicated.The general existence of the stacking interaction encourages us to interpret the antitumor mechanism of a new class of antitumor drugs.
摘要介绍了垂直堆叠芯片单粒子效应地面试验预计方法,通过一种背面减薄方法,解决一款宇航用垂直堆叠芯片在单粒子效应地面试验中的难点,使其地面试验得以顺利进行,获得了该芯片的主要单粒子事件参数,包括单粒子翻转饱和截面、线性能量传输阈值。根据故障定位,该款垂直堆叠芯片抗单粒子翻转能力薄弱点为上层硅互补金属氧化物半导体(Complementary metal oxide semiconductor,CMOS)波控芯片锁存器IP单元。本研究形成了一套通用的垂直堆叠芯片单粒子效应地面试验预计方案,可为高可靠高密度宇航集成电路研制提供有力保障。
基金Project supported by the National Natural Science Foundation of China (No. 10972212)
摘要It is necessary to understand the features of air pressure in a drainage stack of a high-rise building for properly designing and operating a drainage system. This paper presents a mathematical model for predicting the stack performance. A step function is used to describe the effect of the air entrainment caused by the water discharged from branch pipes. An additional source term is introduced to reflect the gas-liquid interphase interaction (GLII) and stack base effect. The drainage stack is divided into upper and base parts. The air pressure in the upper part is predicted by a total variation diminishing (TVD) scheme, while in the base part, it is predicted by a characteristic line method (CLM). The predicted results are compared with the data measured in a real-scale high- rise test building. It is found that the additional source term in the present model is effective. It intensively influences the air pressure distribution in the stack. The air pressure is also sensitive to the velocity-adjusting parameter (VAP), the branch pipe air entrainment, and the conditions on the stack bottom.
摘要In the present work, a two-dimensional(2D) analytical framework of triple material symmetrical gate stack(TMGS)DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.