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Carbon nanotube-based bio-inspired neuron systems via cascaded thin-film transistor-driven light emitting diodes and optoelectronic synaptic transistors for neuromorphic computing 认领 引用
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作者 Jiaqi Li Lingzhi Wu +6 位作者 Jing Xu Min Li Mingnan Chen Chengyong Xu Shuangshuang Shao Manman Luo Jianwen Zhao 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2026年第2期756-770,共15页
The development of bio-inspired neural systems has emerged as a transformative approach to overcome the limitations of von Neumann architecture,replicating the remarkable energy efficiency and unified sensory-processi... The development of bio-inspired neural systems has emerged as a transformative approach to overcome the limitations of von Neumann architecture,replicating the remarkable energy efficiency and unified sensory-processing capabilities of biological neurons.In this work,we present a monolithic neuromorphic platform utilizing cascaded single-walled carbon nanotube thin-film transistors(SWCNT TFTs)that integrate Mini-light-emitting diodes(Mini-LEDs)with optoelectronic synaptic transistors,achieving synergistic optoelectronic integration.The SWCNT TFTs exhibit dual functionality:(1)as highly stable active-matrix drivers(>1000 operational cycles)enabling precise Mini-LED grayscale modulation,and(2)as efficient optoelectronic synaptic devices.Fabricated at wafer-scale with micrometer feature sizes,these devices demonstrate exceptional performance metrics,including low operating voltages(±1 V),high on/off ratios(106),near-ideal subthreshold swing(78 mV·dec-1),and precise Mini-LED current regulation(10-8A-10-4A)under 25 Hz pulsed gate operation.The optoelectronic synaptic devices based on organic-semiconductor heterojunction formed between poly(3,3”’-didodecyl quaterthiophene)(PQT-12)and semiconducting SWCNTs enable broadband photoresponses(365 nm-710 nm)through efficient charge transport,driven by TFT-controlled Mini-LED pulses.The implemented bio-inspired visual system successfully emulates fundamental synaptic functionalities,exhibiting excitatory postsynaptic currents(EPSC),short-term potentiation(STP),and long-term potentiation(LTP).Notably,we demonstrate system-level functionality through a five-layer convolutional neural network,achieving 92.02%accuracy on MNIST classification,while the monolithic integration establishes a biomimetic closed-loop“electrical-optical-electrical”pathway that faithfully simulates complete biological synaptic operation.This pioneering cascade of electronic,photonic,and optoelectronic components represents a significant advancement toward high-density,energy-efficient neuromorphic computing. 展开更多
关键词 carbon nanotube thin-film transistor optoelectronic synaptic transistors bio-inspired neuron system neuromorphic computing
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Dual-mode All-PEDOT:PSS Organic Electrochemical Transistors:Enzyme/Metal-free Platform for Ultrasensitive Multiplexed Biosensing of Biomarkers 认领 引用 被引量：1
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作者 Xiao-Fang Liu Jia-Hui Lai +8 位作者 Cheng Liu Pei-Pei Liu Yin-Xiu Zuo Huan-Huan Qiu Rong-Ri Tan Jing Li Yu-Kou Du Jing-Kun Xu Feng-Xing Jiang 《Chinese Journal of Polymer Science》 SCIE EI CAS CSCD 2026年第2期371-380,I0009,共10页
Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochem... Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochemical sensors because of their limited sensitivity and selectivity.Here,we present a millimeter-scale all-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)organic electrochemical transistor(OECT)platform that integrates dual-mode sensing with enzyme/metal-free operation for ultrasensitive biomarker monitoring.By engineering polycrystalline PEDOT:PSS channels via H_2 SO_4 post-treatment,the device achieves record-high conductivity(about(2312.0±29.9)S·cm–1),maximum transconductance(about(2.82±0.12)mS),and on/off ratio(about 210.0±7.8),enabling signal amplification at low gate voltages.The dual-mode strategy combines the selectivity of electrochemistry with the sensitivity of OECTs,realizing simultaneous detection of glucose,AA,UA,and DA with clinical-level sensitivity:detection limits down to 8 nmol·L–1(glucose),0.5 nmol·L–1(AA),5 nmol·L–1(DA),and 0.5 nmol·L–1(UA).Validation using human urine samples yielded recovery rates of 94%–114%.This flexible sensing platform provides a new pathway for the development of wearable biosensors for precision diagnostics. 展开更多
关键词 Dual-mode Electrochemistry Organic electrochemical transistors(OECTs) Organic biosensor Post-treatment
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Low-Dimensional Materials for Future Transistors 认领 引用
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作者 Shuohua Zhang Zhihan Hong +2 位作者 Mingjun Ren Limin Zhu Jing Wang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2026年第9期1-5,共5页
The scaling of transistors is approaching its physical limits,making the future direction of transistor development a topic of global significance.Low-dimensional materials(LDMs),which exhibit superior properties comp... The scaling of transistors is approaching its physical limits,making the future direction of transistor development a topic of global significance.Low-dimensional materials(LDMs),which exhibit superior properties compared to bulk materials,are emerging as a driving force for transformative advancements across various industries.What do LDMs signify for the future of transistors?Where do the challenges and opportunities lie?This perspective concludes with an overview of the transistor development roadmap,highlighting key technological milestones for LDMs,and proposes three pathways for integrating LDMs into future transistors across near-,mid-,and long-term horizons. 展开更多
关键词 Low-dimensional materials Transistor scaling Post-Moore Lab-to-fab translation Future transistor
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Beyond the Silicon Plateau:A Convergence of Novel Materials for Transistor Evolution 认领 引用
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作者 Jung Hun Lee Jae Young Kim +3 位作者 Hyeon-Ji Lee Sung-Jin Choi Yoon Jung Lee Ho Won Jang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2026年第2期786-844,共59页
As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.Ho... As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies. 展开更多
关键词 Modern transistors Transistor scaling Alternative semiconductors 3D integration Device reliability
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Proposed Nanoscale Spin Field-Effect Transistors with 2D Ferroelectric Rashba Semiconductors 认领 引用
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作者 Jing Chen Mengshuo Kang +5 位作者 Qiwei Hu Pan Gao Tongwei Li Liangyu Wang Weiwei Ju Wei Hu 《Chinese Journal of Chemical Physics》 SCIE EI CAS CSCD 2026年第3期377-389,I0049-I0055,共13页
The spin field-effect transistor(SFET)based on ferroelectric Rashba semiconductor(FRS)has a shorter channel length than ordinary transistors,making it an important type of future transistor.Through high-throughput inv... The spin field-effect transistor(SFET)based on ferroelectric Rashba semiconductor(FRS)has a shorter channel length than ordinary transistors,making it an important type of future transistor.Through high-throughput inverse design,AlBi and SiPb monolayers are considered to be very promising FRSs due to their prominent Rashba effect,the thinnest atomic structure,and surmountable energy barriers.Herein,we employ first-principles calculations to systematically investigate the modulation of Rashba effect,electric field response,and ferroelectricity in AlBi and SiPb monolayers.The large Rashba coefficients of 2.717 and 2.606 eV·Åare obtained for AlBi and SiPb monolayers,while they can be efficiently modulated by the external electric field and strain engineering.The electric field response of AlBi oscillates around 0.5 e·Å2and that of SiPb can reach 0.78 e·Å2,which can fully meet the requirements of practical applications.Furthermore,as typical two-dimensional ferroelectric materials,the coupling effect between ferroelectric polarization and spin polarization is also explored.Based on these investigations,we design two types of SFET with AlBi or SiPb monolayer as the channel.The SFET designed solely based on the electric field response without considering the ferroelectricity,has a channel length ranging from 70 nm to 100 nm.The SFET designed based on the ferroelectricity can reduce the channel length to below 2 nm,which is quite below the tolerance of coherent transport in semiconductors.Thus,two-dimensional(2D)FRS can be considered as a promising candidate material for the next generation of SFETs. 展开更多
关键词 Rashba effect Ferroelectricity Spin field-effect transistor Electric field re-sponse AlBi and SiPb monolayers
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In-Sensor Reservoir Computing Employing Reconfigurable Optoelectronic Transistors for Multi-Task Learning 认领 引用
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作者 Shanshan Jiang Hainan Zhang +4 位作者 Kesheng Wang Shuo Cheng Can Fu Huanhuan Wei Gang He 《Rare Metals》 SCIE EI CAS CSCD 2026年第4期629-639,共11页
The edge deployment of artificial intelligence has driven the exploitation of compact,energy-efficient information processing systems that integrate sensing,memory,and multi-task processing functions.However,conventio... The edge deployment of artificial intelligence has driven the exploitation of compact,energy-efficient information processing systems that integrate sensing,memory,and multi-task processing functions.However,conventional vision systems suffer from significant energyime overhead,extra hardware costs,and an unaffordable algorithm.Herein,we demonstrate an in-sensor computing system employing reconfigurable optoelectronic transistors(ROETs)for multi-task learning.These transistors exhibit reconfigurable volatile and nonvolatile characteristics under both optical and electrical stimuli.Capitalizing on this reconfigurability,we establish an in-sensor reservoir computing(RC)system operating in multi-signal modes:volatile dynamics function as the reservoir,whereas nonvolatile properties configure the readout layer.The abundant optoelectronic reservoir states display exceptional feature separability and prolonged stability in the ambient atmosphere.Such a reliable RC system successfully achieves multi-task processing of images.Notably,under the optoelectronic coordination mode,it effectively alleviates feature degradation while sustaining consistently high recognition accuracy.Furthermore,the system exhibits remarkable dynamic information processing capabilities,achieving recognition accuracies of 89.02%for dynamic gestures and 96.04%for moving vehicles recognition,respectively.Supplemental functionalities,including light adaptation and image sharpening,are also implemented.This work presents a configurable multimodal platform featuring a flexible in-sensor reservoir computing architecture,providing a potential solution for efficient multi-task processing. 展开更多
关键词 in-sensor reservoir computing multi-task learning neuromorphic applications optoelectronic transistors reconfigurable devices
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Displacement damage effects of low-energy gallium ion irradiation on single-walled carbon nanotube field-effect transistors 认领 引用
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作者 Yu Zhang Huanling Wang +12 位作者 Chenyin Jiao Jiaze Qin Zejuan Zhang Shenghai Pei Suhan Tang Feiliang Chen Ge Tang Juan Xia Chuan Wang Mo Li Hongxia Guo Xiaoping Ouyang Jian Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2026年第7期688-695,共8页
The displacement damage(DD)effects induced by low-energy gallium ions(Ga+)on single-walled carbon nanotube field-effect transistors(SWCNT FETs)are investigated in this study.Exposure to 5 keV Ga+irradiation resu... The displacement damage(DD)effects induced by low-energy gallium ions(Ga+)on single-walled carbon nanotube field-effect transistors(SWCNT FETs)are investigated in this study.Exposure to 5 keV Ga+irradiation resulted in significant changes in the Raman spectra and electrical properties of the devices.The key finding reveals a strong heavy-ion energy dependence of displacement damage(DD):the displacement damage dose(Dd)induced by 5 keV Ga+irradiation is nearly three orders of magnitude higher than that induced by 2225 MeV xenon ions(Xe+).By integrating Raman spectroscopy,electrical characterization,and TRIM simulations,we demonstrate that low-energy heavy ions deposit substantially more energy via non-ionizing energy loss(NIEL)processes within the SWCNT and gate oxide layers compared with high-energy ions.This enhanced energy deposition generates more atomic displacements and vacancies,which significantly degrade both the conductivity of the SWCNT channel and the insulating properties of the gate oxide.These findings provide critical insights into the impact of low-energy ion irradiation on SWCNTs and contribute to a deeper understanding of SWCNT FET behavior in radiation environments. 展开更多
关键词 displacement damage low-energy gallium ions single-walled carbon nanotube field-effect transistors non-ionizing energy loss
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Leakage-and tunneling-current through the gate dielectric of organic thin film transistor using retarded Green's function,creation and annihilation operators 认领 引用
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作者 BAHARI Ali ROODBARI SHAHMIRI Mandana BAHARI Mohammad 《Journal of Central South University》 SCIE EI CAS CSCD 2026年第4期1525-1540,共16页
One of the main challenges of current metal-oxide-semiconductor field effect transistors(MOSFETs)is the exponential increase in the tunneling(and leakage-)current through the gate dielectric material while shrinking t... One of the main challenges of current metal-oxide-semiconductor field effect transistors(MOSFETs)is the exponential increase in the tunneling(and leakage-)current through the gate dielectric material while shrinking the gate dielectric material thickness.Over the last two decades,many researchers have attempted to find an alternative material for the gate dielectric of transistors that has the advantages of the current silicon oxide gate dielectric of MOSFETs but without its disadvantages.In the search for an excellent gate dielectric,researchers have compared the key electrical parameters with those of current gate dielectric materials.They applied equations,approaches,and relationships for their evaluations and estimations,which may be incomplete relationships and most likely did not lead to the correct evaluation probability.Among the cases,the great importance is the relationship with the leakage-current from the gate dielectric layer in organic field-effect transistors(OFETs)or thin-film transistors(TFTs).In these discussions and evaluations based on the conventional leakage-current relationship,interactions related to particle exchange and pinch-up displacement in the charge carrier transport channel,particularly the overlap of the wave functions of electrons(or holes)in the channel and at the interface layers,have not been considered.The novelty and specific objectives of the present work are:modifying the Hamiltonian operators based on self-energy(Σ),the retarded Green's function(GR),creation(C+)/annihilation(C)operators,and the overlapping wave functions of the charge carriers in the gate and substrate systems;obtaining a more complete leakage-current density(J)relationship than the existing relationships;and comparing the electrical characteristics measurement results of five small molecule polymers:PEIE(0.8 nA/cm2),Ps(1 nA/cm2),PFS(2 nA/cm2),ph(4 nA/cm2),PMMA(20 nA/cm2)with previously reported findings.The obtained results can be highly useful for optimizing organic thin-film transistor formulations for potential use in next-generation nanoelectronic devices with lower energy consumption. 展开更多
关键词 organic field effect transistors optoelectronic chips gate dielectric leakage current
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Organic Phototransistor Photonic Synapses for Artificial Vision 认领 引用 被引量：1
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作者 Feng Ding Di Xue +1 位作者 Lifeng Chi Lizhen Huang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2026年第6期656-701,共46页
The von Neumann architecture faces significant limitations,including low transmission efficiency and high energy consumption,whenhandling large-scale data and unstructured problems.Benefiting from theinherent merits o... The von Neumann architecture faces significant limitations,including low transmission efficiency and high energy consumption,whenhandling large-scale data and unstructured problems.Benefiting from theinherent merits of optical signals including high bandwidth,near-zeroJoule heating,fast transmission speed,and immunity to electromagneticinterference,photonics provides a powerful pathway for high-speed neuromorphiccomputing.Together with the mechanical flexibility and largeareamanufacturability of organic semiconductors,organic phototransistor(OPT)-based photonic synapses have therefore attracted extensive attentionin recent years.This review provides a comprehensive overview of recentadvances in OPT-based photonic synapses,covering operational principles,active materials,advances in bidirectional photoresponse process,as wellas cutting-edge applications.Finally,the current challenges and opportunitiesin this field are highlighted.Distinct from previous reviews,this review emphasizes an in-depth exploration of bidirectional photoresponsemechanisms,a systematic dissection of material-structure-function correlations enabling integrated sensing-memory technology,and emerging. 展开更多
关键词 Transistor Organic semiconductors Negative photoconductance Photonic synapse Neuromorphic computing
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In-situ growth of high-crystallinity M3(hexaaminotriphenylene)2(M=Co,Ni)thin film for field-effect transistor-based glucose biosensor 认领 引用 被引量：1
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作者 Pengwei Tan Shuyang Shen +1 位作者 Yuanyuan Luo Guotao Duan 《Chinese Chemical Letters》 SCIE CAS CSCD 2026年第4期461-466,共6页
The integration of advanced sensing materials as channel layers in devices is essential for constructing field-effect transistor(FET)biosensors.In this study,we synthesized high-crystallinity bimetallic M3(hexaamin... The integration of advanced sensing materials as channel layers in devices is essential for constructing field-effect transistor(FET)biosensors.In this study,we synthesized high-crystallinity bimetallic M3(hexaaminotriphenylene)2(M=Co,Ni)thin films as FET channel materials via an in-situ growth method using a mixed solvent system of water and N,N-dimethylformamide(DMF).This bimetallic metalorganic framework(MOF)-based FET then served as a glucose biosensor,achieving a high sensitivity and an ultra-wide detection range from 10 nmol/L to 10 mmol/L.Further studies reveal that the success of in-situ growth of the high-crystalline bimetallic MOF film can be attributed to the coordination solvent exchange reaction between the metal atomic center,DMF,and water.Furthermore,the introduction of bimetallic centers enhances the number of active sites within the MOF,thereby achieving an ultra-low detection limit and an ultra-wide detection range.This work presents a versatile approach for constructing high performance FET biosensors. 展开更多
关键词 M3(hexaaminotriphenylene)2(M=Co Ni)thin film Metal-organic framework(MOF) Field-effect transistor(FET) Glucose biosensors In-situ growth
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Quantum thermoelectric diodes and transistors with squeezed reservoir engineering 认领 引用
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作者 Ziming Wang Gaoyuan Chen +5 位作者 Yongkang Liu Chenhui Yu Yue Wu Zi Wang Hongzhao Sun Jincheng Lu 《Chinese Physics B》 SCIE EI CAS CSCD 2026年第4期363-372,共10页
This work investigates inelastic thermoelectric systems exhibiting tight relations among electronic charge,electronic heat,and photonic heat currents.By employing a double quantum dot setup interacting with a squeezed... This work investigates inelastic thermoelectric systems exhibiting tight relations among electronic charge,electronic heat,and photonic heat currents.By employing a double quantum dot setup interacting with a squeezed photon reservoir,we show that such architectures can operate as high-performance quantum thermoelectric diodes and transistors.Central to this capability is the role of quantum squeezing,which markedly enhances the rectification of both charge and heat currents.Moreover,we demonstrate that a photon-assisted inelastic transport mechanism sustains a thermal transistor effect even within the linear-response regime—a regime where conventional elastic devices typically fail to amplify heat currents.Notably,quantum squeezing further enhances the thermal gain,underscoring its utility in quantum heat control.These results not only deepen our understanding of nonequilibrium quantum thermoelectrics but also provide a viable pathway toward designing devices with tailored energy-conversion functionalities through quantum reservoir engineering. 展开更多
关键词 thermoelectrics quantum thermodynamics diode transistors
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Improved stability of amorphous InGaZnO4 thin-film transistors under negative bias illumination stress with the incorporation of fluorine passivation and metal shielding lines 认领 引用
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作者 Yuhan Feng Nannan Lv +2 位作者 Huaisheng Wang Mingxiang Wang Dongli Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2026年第5期646-652,共7页
The instability phenomenon under negative bias illumination stress(NBIS)remains a major challenge for the application of amorphous indium gallium zinc oxide(a-IGZO)thin-film transistors(TFTs)in active-matrix displays.... The instability phenomenon under negative bias illumination stress(NBIS)remains a major challenge for the application of amorphous indium gallium zinc oxide(a-IGZO)thin-film transistors(TFTs)in active-matrix displays.In this paper,we employ fluorine plasma treatment and a segmented metal cover line approach to enhance the stability of elevated metal metal-oxide(EMMO)a-IGZO TFTs under NBIS.At room temperature,after 15 minutes of fluorine treatment,∆VONdecreases from 5.53 V to 2.02 V.This improvement is mainly attributed to the fact that fluorine atoms fill the ionized oxygen vacancies in a-IGZO,thereby reducing the density of defect states in the channel.Further adding 2.0µm wide metal-covered wires reduces the∆VONto 0.35 V.Under 80℃NBIS,the∆VONis limited to 3.79 V.This improvement is mainly attributed to the light-shielding effect of the metal lines and the passivation of oxygen vacancies by fluorine,thereby enhancing device stability under NBIS. 展开更多
关键词 thin-film transistor (TFT) a-IGZO negative bias illumination stress (NBIS) stability fluorination
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Highly sensitive SWCNT-based pyroelectric phototransistors for broadband room temperature infrared detection 认领 引用
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作者 Svetlana I.Serebrennikova Daria S.Kopylova +7 位作者 Yuriy G.Gladush Sakellaris Mailis Nikita E.Gordeev Aliya R.Vildanova Aleksandr V.Averchenko Sergey S.Zhukov Dmitry V.Krasnikov Albert G.Nasibulin 《Opto-Electronic Advances》 SCIE EI CAS CSCD 2026年第5期24-35,共12页
Thermal infrared(IR)detectors represent a crucial technology for various applications,yet achieving high performance without cooling remains challenging.Here,we demonstrate high-performance broadband IR photodetectors... Thermal infrared(IR)detectors represent a crucial technology for various applications,yet achieving high performance without cooling remains challenging.Here,we demonstrate high-performance broadband IR photodetectors by integrating single-walled carbon nanotubes(SWCNTs)with a ferroelectric substrate,leveraging the pyroelectric effect for enhanced photodetection.Using aerosol chemical vapor deposition and capillary transfer techniques,we fabricate sparse SWCNT films on z-cut LiNbO3surfaces to create pyroelectrically gated field-effect transistors.The devices exhibit remarkable responsivity across the IR spectrum,with semiconducting channels achieving maximum relative responsivities reaching nearly 100%/μW at 1550 nm.Our optimized SWCNT networks demonstrate exceptional specific detectivities of 1.7×1010cm√Hz at 1550 nm and 1.4×1010cm√Hz at 9.3μm,surpassing graphene-based alternatives by several orders of magnitude and approaching theoretical limits.These results establish SWCNT-based pyroelectric photodetectors as promising candidates for room-temperature IR detection,eliminating the conventional requirement for cooling. 展开更多
关键词 photogating carbon nanotubes field effect transistor photodetector LiNbO3
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Balancing switching and transient response for ion gating in field-effect nanofluidic transistors 认领 引用
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作者 Xiaoqing Wu Yajie Chen +3 位作者 Dagui Wang Song Pu Qiujiao Du Pengcheng Gao 《Chinese Chemical Letters》 SCIE CAS CSCD 2026年第1期385-388,共4页
Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has... Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics. 展开更多
关键词 Nanofluidic transistor Gate charge Ion transport Switching ratio Response time
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Full‑Photolithographic High‑Density Skin‑Like Transistor Arrays for All‑Organic Active‑Matrix Displays 认领 引用
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作者 Peng Xue Juntong Li +15 位作者 Xiaoli Zhao Yanping Ni Hongyan Yu Xianghui Liu Bowen Xiang Yao Fu Junru Zhang Baoying Sun Pengbo Xi Xiang Song Yijun Shi Guodong Zhao Mingxin Zhang Yanhong Tong Qingxin Tang Yichun Liu 《Nano-Micro Letters》 SCIE EI CAS CSCD 2026年第8期395-409,共15页
Organic thin-film transistors(OTFTs)are widely recognized as promising building blocks for nextgeneration flexible and wearable electronics.However,scalable fabrication of high-density OTFT arrays for activematrix app... Organic thin-film transistors(OTFTs)are widely recognized as promising building blocks for nextgeneration flexible and wearable electronics.However,scalable fabrication of high-density OTFT arrays for activematrix applications remains highly challenging,primarily due to the incompatibility of conventional photolithography with organic semiconductors.Here,we report an all-photolithographic strategy that enables the scalable fabrication of flexible OTFT arrays with both high device density and superior charge transport characteristics.By combining synergistic interfacial modulation and dual-protection photolithography strategy of organic semiconductors,we successfully fabricated transistor arrays exhibiting an average mobility above 1.0 cm2 V−1 s−1 and on/off ratios of~105.This scalable method further enables an integration density of 6.25×104 cm−2,which is one of the highest densities reported to date for full-photolithographic OTFT active-matrix arrays.Moreover,we demonstrate seamless integration of OTFT active-matrix arrays with organic light-emitting diodes(OLEDs),yielding all-organic active-matrix OLED(AMOLED)arrays.These devices exhibit stable electroluminescence,ultralight weight(~24.3 g m−2),excellent flexibility,and skinlike display functionality with reliable pixel-level addressing.This work establishes a universal and scalable route toward high-density organic electronic systems,opening new opportunities for flexible displays,electronic skin,and next-generation wearable technologies. 展开更多
关键词 Active-Matrix Organic thin-film transistors Photolithography Organic light-emitting diodes
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Tailoring oxygen vacancies in Ni-doped In2O3 for improved thin-film transistor stability and performance via solution processing 认领 引用
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作者 Fakhari Alam Sara Ajmal +3 位作者 Muhammad Asim Shahzad Ghulam Dastgeer Aamir Rasheed Gang He 《Journal of Semiconductors》 EI CAS CSCD 2026年第2期61-71,共11页
Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ... Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In2O3) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In2O3 on the structural and electrical transport properties of In2O3, revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(Vth).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm2/(V·s), an impressive ON/OFF current ratio of ~107, a Vth of 6.26 V, reduced interfacial trap states(Dit) of 8.23 ×1012 cm-2 and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics. 展开更多
关键词 thin-film transistors Ni-doped In2O3 solution processing bias illumination stability
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Coplanar Floating-Gate Antiferroelectric Transistor with Multifunctionality for All-in-One Analog Reservoir Computing 认领 引用 被引量：1
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作者 Yufei Shi Zijie Zheng +5 位作者 Jiali Huo Yu‑Chieh Chien Sifan Li Haofei Zheng Xiao Gong Kah‑Wee Ang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2026年第6期640-655,共16页
Analog reservoir computing(ARC)systems offer an energy-efficient platform for temporal information processing.However,their physical implementation typically requires disparate materials and device architectures for d... Analog reservoir computing(ARC)systems offer an energy-efficient platform for temporal information processing.However,their physical implementation typically requires disparate materials and device architectures for different system components,leading to complicated fabrication processes and increased system complexity.In this work,we present a coplanar floating-gate antiferroelectric field-effect transistor(FG AFeFET)that unifies multiple neural functionalities within a single device,enabling the physical implementation of a complete ARC system.By combining a coplanar layout design with an area ratio engineering strategy,we achieve tunable device behaviors,including volatile responses for artificial neuron emulation,nonvolatile states for synaptic functions,and fading memory dynamics for reservoir operations.The mechanisms underlying these functionalities and their operating mechanism are systematically elucidated using load line analysis and energy band diagrams.Leveraging these insights,we demonstrate an all-in-one ARC system based on the unified coplanar FG AFeFET architecture,which achieves recognition accuracies of 95.6%and 83.4%on the MNIST and Fashion-MNIST datasets,respectively.These findings highlight the potential of coplanar FG AFeFETs to deliver area-efficient,design-flexible neuromorphic hardware for next-generation computing systems. 展开更多
关键词 Hafnium zirconium oxide Coplanar structure Antiferroelectric field-effect transistor Reservoir computing Multifunctionality
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Thin-film transistors processed from spin-coating zinc salt dissolved colloidal aqueous solution of nano ZnO 认领 引用
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作者 SUN Yuying LIN Shaopeng +2 位作者 TANG Yuanxin LIU Jianan LI Chensha 《黑龙江大学工程学报（中英俄文）》 2026年第1期14-21,共8页
ZnO thin-film transistors(TFTs)with channel layers fabricated by spin-coating are demonstrated.A nano ZnO colloidal aqueous solution with zinc nitrate dissolved in it was first deposited on the ATO/ITO/glass substrate... ZnO thin-film transistors(TFTs)with channel layers fabricated by spin-coating are demonstrated.A nano ZnO colloidal aqueous solution with zinc nitrate dissolved in it was first deposited on the ATO/ITO/glass substrate by spin-coating process.The thin-film transistor with well-controlled and densely packed ZnO crystalline layer was obtained by thermal annealing the system of colloidal solution film coated ATO/ITO/glass substrate.By optimizing the fabrication conditions,the fabricated thin-film transistors exhibited superior field-effect properties,which were stable,highly transparent,n-channel and enhancement-mode with a channel mobility as large as 3.02 cm2·V-1.s-1.Our method of fabricating ZnO thin-film transistors was simple,high efficiency,and feasible for the batch production with low cost. 展开更多
关键词 zinc oxide colloidal solution thin-film transistor spin-coating deposition annealingprocess
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Organic electrochemical transistor-based theranostics:materials,mechanisms,and system integration 认领 引用
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作者 Runxue Wei Zinuo Li +2 位作者 Qiuchun Lu Jia-Han Zhang Xidi Sun 《Journal of Semiconductors》 EI CAS CSCD 2026年第8期38-64,共27页
Organic electrochemical transistors(OECTs),leveraged by their unique volumetric doping mechanism and ultra-high transconductance performance,have emerged as a pivotal device platform for constructing high-performance ... Organic electrochemical transistors(OECTs),leveraged by their unique volumetric doping mechanism and ultra-high transconductance performance,have emerged as a pivotal device platform for constructing high-performance bioelectronic interfaces.OECT-based theranostics aim to develop intelligent closed-loop systems that integrate sensing,decision-making,and execution,thereby overcoming the latency and discretization limitations of traditional medical models when managing dynamic physiological fluctuations.This article systematically reviews the performance evolution of OECT materials from p-type to n-type,discusses critical strategies for enhancing device stability and transconductance density,such as side-chain engineering and ladder-type molecular design,while emphasizing the essential role of complementary logic circuits in minimizing the static power consumption of implantable electronics.Furthermore,breakthroughs in OECT-based neuromorphic computing are addressed;by simulating synaptic plasticity(STP/LTP)and engineering organic electrochemical neurons(OECNs),a highly efficient sensing-computing closed-loop architecture has been realized.The current application landscape of OECTs in electrophysiological monitoring,neurochemical sensing,and multimodal synergistic sensing is detailed,alongside a summary of highdensity array fabrication and system integration strategies,including 3D printing,inkjet printing,and 3D hydrogel integration.Finally,future outlooks are provided,focusing on challenges such as the environmental stability of n-type materials,multi-modal signal crosstalk,and long-term clinical reliability. 展开更多
关键词 organic electrochemical transistors flexible array integration theranostic
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Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO2passivation 认领 引用
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作者 Tingrui Huang Jie Cao +7 位作者 Zuoxu Yu Yuzhen Zhang Wenting Xu Xifeng Li Cong Peng Weifeng Sun Guangan Yang Wangran Wu 《Journal of Semiconductors》 EI CAS CSCD 2026年第2期15-21,共7页
In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO2via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(tch=4,5... In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO2via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(tch=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔVth)and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO2passivation layer.Overall,the ITO TFT with the tchof 6 nm and with SiO2passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production. 展开更多
关键词 thin film transistor reliability InSnO SiO2
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