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Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2-x oxygen vacancy reservoir layer for neuromorphic computing 认领 引用 被引量:1
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作者 Turgun Boynazarov Joonbong Lee +5 位作者 Hojin Lee Sangwoo Lee Hyunbin Chung Dae Haa Ryu Haider Abbas Taekjib Choi 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2025年第24期164-173,共10页
Neuromorphic computing devices leveraging HfO2 and ZrO2 materials have recently garnered significant attention due to their potential for brain-inspired computing systems.In this study,we present a novel trilaye... Neuromorphic computing devices leveraging HfO2 and ZrO2 materials have recently garnered significant attention due to their potential for brain-inspired computing systems.In this study,we present a novel trilayer Pt/HfO2/ZrO2-x/HfO2/TiN memristor,engineered with a ZrO2-x oxygen vacancy reservoir(OVR)layer fabricated via radio frequency(RF)sputtering under controlled oxygen ambient.The incorporation of the ZrO2-x OVR layer enables enhanced resistive switching characteristics,including a high ON/OFF ratio(∼8000),excellent uniformity,robust data retention(>105 s),and multilevel storage capabilities.Furthermore,the memristor demonstrates superior synaptic plasticity with linear long-term potentiation(LTP)and depression(LTD),achieving low non-linearity values of 1.36(LTP)and 0.66(LTD),and a recognition accuracy of 95.3%in an MNIST dataset simulation.The unique properties of the ZrO2-x layer,particularly its ability to act as a dynamic oxygen vacancy reservoir,significantly enhance synaptic performance by stabilizing oxygen vacancy migration.These findings establish the OVR-trilayer memristor as a promising candidate for future neuromorphic computing and high-performance memory applications. 展开更多
关键词 HfO2-based trilayer memristor ZrO2-xoxygen vacancy reservoir Synaptic plasticity Non-volatile memory Neuromorphic computing
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