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Impact of severe plastic deformation on kinetics and thermodynamics of hydrogen storage in magnesium and its alloys 认领 引用 被引量：12
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作者 Kaveh Edalati Etsuo Akiba +10 位作者 Walter J.Botta Yuri Estrin Ricardo Floriano Daniel Fruchart Thierry Grosdidier Zenji Horita Jacques Huot Hai-Wen Li Huai-Jun Lin Ádám Révész Michael J.Zehetbauer 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2023年第15期221-239,共19页
Magnesium and its alloys are the most investigated materials for solid-state hydrogen storage in the form of metal hydrides,but there are still unresolved problems with the kinetics and thermodynamics of hydrogenation... Magnesium and its alloys are the most investigated materials for solid-state hydrogen storage in the form of metal hydrides,but there are still unresolved problems with the kinetics and thermodynamics of hydrogenation and dehydrogenation of this group of materials.Severe plastic deformation(SPD)methods,such as equal-channel angular pressing(ECAP),high-pressure torsion(HPT),intensive rolling,and fast forging,have been widely used to enhance the activation,air resistance,and hydrogenation/dehydrogenation kinetics of Mg-based hydrogen storage materials by introducing ultrafineanoscale grains and crystal lattice defects.These severely deformed materials,particularly in the presence of alloying additives or second-phase nanoparticles,can show not only fast hydrogen absorption/desorption kinetics but also good cycling stability.It was shown that some materials that are apparently inert to hydrogen can absorb hydrogen after SPD processing.Moreover,the SPD methods were effectively used for hydrogen binding-energy engineering and synthesizing new magnesium alloys with low thermodynamic stability for reversible lowoom-temperature hydrogen storage,such as nanoglasses,high-entropy alloys,and metastable phases including the high-pressureγ-MgH2 polymorph.This work reviews recent advances in the development of Mg-based hydrogen storage materials by SPD processing and discusses their potential in future applications. 展开更多
关键词 Severe plastic deformation(SPD) Nanostructured materials Ultrafine-grained(UFG)materials Magnesium hydride(MgH2) Magnesium-based alloys Hydrogen absorption Hydrogenation kinetics Hydrogen storage thermodynamics
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Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition 认领 引用 被引量：1
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作者 Congyu Hu Katsuhiko Saito +1 位作者 Tooru Tanaka Qixin Guo 《Journal of Semiconductors》 CAS CSCD 2019年第12期121-125,共5页
Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequenc... Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported. 展开更多
关键词 wide bandgap gallium oxide oxygen radical pulsed laser deposition plasma
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Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE 认领 引用
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作者 吕海燕 牟奇 +5 位作者 张磊 吕元杰 冀子武 冯志红 徐现刚 郭其新 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第12期346-351,共6页
Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structu... Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the Ga As substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor–acceptor pair（DAP） nor conduction band-acceptor（e–A） emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal. 展开更多
关键词 photoluminescence ZnTe bulk crystal ZnTe epilayer defect or impurity-related emissions
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